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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL7434PBF

Name: IRFSL7434PBF
Brand: Infineon Technologies
SKU: IRFSL7434PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL7434PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL7434PBF.pdf

Description:: MOSFET N-CH 40V 195A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL7434PBF from Infineon Technologies is a 40V, 195A (package-limited), 1.25mΩ typ. N-channel HEXFET Power MOSFET in TO-262 package, optimized for high-current synchronous rectification and half-bridge motor drive stages where low R_DS(on), robust avalanche capability (E_AS = 490 mJ), and fast body diode recovery (t_rr = 38 ns) are critical.

For engineers reviewing the IRFSL7434PBF datasheet, IRFSL7434PBF pinout, IRFSL7434PBF application, or IRFSL7434PBF equivalent, key selection criteria include gate charge (Q_g = 216 nC), dV/dt ruggedness (5.0 V/ns), SOA-limited current at elevated temperature, and thermal resistance (R_θJC = 0.5 °C/W) for high-power density PCB layouts.

Technical Context

This device employs a planar silicon process with optimized cell pitch and trench-assisted source metallization to achieve ultra-low on-resistance while maintaining >175°C junction rating and enhanced unclamped inductive switching (UIS) survivability. Its body diode exhibits controlled reverse recovery (Q_rr = 50 nC, I_RRM = 1.9 A) and high dI/dt capability (1307 A/μs).

The dynamic parameters-C_iss = 10820 pF, C_oss = 1540 pF, and C_rss = 1140 pF-are fully characterized up to 32 V, enabling accurate loss modeling in resonant LLC and ZVS topologies. Gate threshold voltage (V_GS(th) = 3.0 V typ.) ensures stable turn-on with standard 5 V or 10 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage; sets upper limit for DC bus in 24–36 V systems like BLDC inverters and OR-ing circuits.
R_DS(on) typ.	1.25 mΩ - Enables <1.3 W conduction loss at 100 A; critical for thermally constrained 195 A package-limited operation.
I_D (Package)	195 A - Absolute maximum continuous current defined by bond wire and leadframe thermal limits-not silicon-limited.
E_AS	490 mJ - Single-pulse avalanche energy rating; supports reliable operation under inductive load switching faults without derating.
t_rr	38 ns - Body diode reverse recovery time at T_J = 25°C; reduces switching loss and EMI in synchronous rectifier mode.
Q_g	216 nC - Total gate charge; determines driver power requirement and switching speed trade-off in high-frequency (>100 kHz) converters.
R_θJC	0.5 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for high-power density thermal management.

Pinout & Package

IRFSL7434PBF uses the TO-262 (I²PAK) package: 3-pin, single-ended, through-hole mount with isolated tab (drain-connected). Thermal pad is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control input; requires ≥10 V for full enhancement; internal R_G = 2.1 Ω limits dv/dt-induced false turn-on.
D	Drain	Main power output node; electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits.
S	Source	Power return path and gate reference; low-inductance layout essential to minimize shoot-through risk in bridge configurations.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	5.0 V/ns - Prevents parasitic turn-on during high-speed commutation in half-bridge motor drives.
Full SOA characterization	Validated up to 100 μs pulse width - enables safe operation in unclamped inductive switching without external snubbers.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - supports automated assembly and environmental compliance for industrial end equipment.
Improved gate oxide ruggedness	Rated for ±20 V V_GS - withstands transient overvoltage during hot-plug or fault conditions without gate oxide degradation.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: High-current H-bridge for cordless power tools operating from 18–36 V battery packs.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled half-bridge leg; handles peak currents >150 A with minimal conduction loss.

Use Value: 1.25 mΩ R_DS(on) reduces I²R heating, extending battery runtime and enabling compact heatsink design.

Use Scenario: Upper-leg switch in 3-phase BLDC inverter for e-bike controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier with fast body diode recovery to minimize freewheeling loss during dead-time.

Use Value: 38 ns t_rr and 50 nC Q_rr cut reverse recovery loss by >40% vs. standard MOSFETs in 20 kHz PWM operation.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in 48 V input telecom DC/DC converter delivering 200 A output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by precise gate timing referenced to transformer secondary waveform.

Use Value: 195 A package rating and 0.5 °C/W R_θJC support >98% efficiency at full load without forced air cooling.

Use Scenario: Redundant 24 V DC power supply OR-ing in industrial PLC backplane.

IC Role / Device Role / Timing Role: Low-loss forward conduction path with fast turn-off to prevent reverse current flow during supply switchover.

Use Value: 1.25 mΩ R_DS(on) yields <30 mV forward drop at 100 A, minimizing voltage imbalance between parallel supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS7434PBF	D2Pak package; higher C_iss (10820 pF vs. 10200 pF); identical R_DS(on) and V_DSS.	Better suited for surface-mount designs with thermal vias; slightly higher gate drive loss due to larger C_iss.	Select when board space is constrained and thermal via stacking is feasible.
STL220N4F7AG	40 V, 220 A, 1.15 mΩ typ.; trench-gate process; lower Q_g (190 nC); different pinout (G-D-S vs. G-S-D).	Superior conduction efficiency but requires PCB layout revision; not drop-in compatible.	Choose for new designs targeting <1.0 mΩ conduction loss and reduced driver power consumption.

Compared with IRFS7434PBF and STL220N4F7AG, IRFSL7434PBF offers optimal balance of through-hole manufacturability, proven avalanche robustness, and thermal performance in legacy and high-reliability industrial platforms-without requiring gate drive redesign or layout change.

Availability

IRFSL7434PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, and synchronous rectifier applications requiring stable component supply across multi-year production cycles.

Supply support for IRFSL7434PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with core expertise in silicon and SiC power devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in motor control, power conversion, and redundant power architectures.

FAQ

What is the maximum continuous drain current for IRFSL7434PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 226 A (silicon-limited) per datasheet Absolute Maximum Ratings table. However, the package-limited rating remains 195 A across all temperatures due to bond wire current capacity, making 195 A the practical design limit for sustained operation.

Does IRFSL7434PBF support gate driving with 5 V logic-level signals?

No-its gate threshold voltage (V_GS(th)) ranges from 2.2 V to 3.9 V, but full enhancement requires ≥10 V to achieve rated R_DS(on) of 1.25 mΩ. At 5 V, R_DS(on) rises sharply (>3 mΩ), increasing conduction loss significantly; a 10 V or 12 V gate driver is mandatory for high-current operation.

How is avalanche energy rating validated for IRFSL7434PBF?

E_AS = 490 mJ is measured under standardized unclamped inductive switching (UIS) test conditions: L = 0.099 mH, R_G = 50 Ω, I_AS = 100 A, V_GS = 10 V, starting T_J = 25°C. Each unit undergoes 100% UIS screening per Infineon's quality protocol, ensuring guaranteed single-pulse ruggedness without derating.

Can IRFSL7434PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables inherent current sharing. For stable parallel operation, match gate drive loop inductance, use individual gate resistors (≥5 Ω), and ensure symmetrical thermal mounting to avoid thermal runaway between devices.

IRFSL7434PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 324 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL7434PBF FAQ

1.How can I place an order for IRFSL7434PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7434PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7434PBF reliable?

The price and inventory of IRFSL7434PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7434PBF is usually 5 days.

3.What payment methods are accepted for IRFSL7434PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7434PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL7434PBF?

IRFSL7434PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7434PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7434PBF?

For technical support, including IRFSL7434PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7434PBF requirements.

6.How does Aetrix verify that IRFSL7434PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7434PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7434PBF meets industry standards.

7.What is the process for return or replacement of IRFSL7434PBF?

All IRFSL7434PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7434PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7434PBF part is unused and in its original packaging.

Return procedure for IRFSL7434PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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