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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL7437PBF

Name: IRFSL7437PBF
Brand: Infineon Technologies
SKU: IRFSL7437PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL7437PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL7437PBF.pdf

Description:: MOSFET N-CH 40V 195A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL7437PBF from Infineon Technologies is a 40V, 195A (package-limited), N-channel enhancement-mode HEXFET Power MOSFET in TO-262 package with 1.4 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive. It features enhanced body diode dV/dt and dI/dt capability, 1000 mJ single-pulse avalanche energy, and 100 A continuous source current rating.

For engineers reviewing the IRFSL7437PBF datasheet, IRFSL7437PBF pinout, IRFSL7437PBF application, or IRFSL7437PBF equivalent, key selection criteria include its 1.4 mΩ on-resistance at 10 V gate drive, 195 A package-limited continuous drain current, robust 1000 mJ unclamped inductive switching capability, and TO-262 thermal performance with 0.65 °C/W R_θJC.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted charge balancing to achieve ultra-low R_DS(on) while maintaining >40 V V_(BR)DSS and controlled threshold voltage (2.2–3.9 V). Its body diode is engineered for fast recovery (t_rr = 30 ns) and high dI/dt immunity (up to 1166 A/μs).

The device operates in enhancement mode with gate threshold defined at 150 μA ID, exhibits 150–225 nC total gate charge, and supports hard-switched topologies up to 200 kHz due to low C_oss eff. (TR) = 1735 pF and Crss = 745 pF - enabling efficient zero-voltage switching in resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; enables use in 24 V and 36 V DC bus systems.
R_DS(on) typ.	1.4 mΩ @ V_GS = 10 V, T_J = 25°C - Delivers <0.14 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D (Package)	195 A @ T_C = 25°C - Thermal limit set by TO-262 copper tab and bond wire; defines max continuous output in heatsink-mounted designs.
E_AS	1000 mJ - Single-pulse avalanche energy rating; supports reliable operation under unclamped inductive switching in motor drives.
Q_g	150–225 nC - Gate drive charge requirement determines driver strength needed; impacts switching loss and gate resistor sizing.
t_rr	30 ns @ T_J = 25°C - Fast body diode recovery minimizes commutation loss and voltage overshoot during synchronous rectification.
R_θJC	0.65 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable temperature rise under steady-state load.

Pinout & Package

IRFSL7437PBF is housed in a TO-262 (Straight Lead) package with isolated metal tab for direct heatsink attachment. The package provides low-inductance, high-current terminals and meets lead-free/halogen-free requirements per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load return	Internally connected to metal tab; electrically tied to heatsink - requires insulation unless system ground referenced.
Source (S)	Power return node and reference for gate drive	Low-inductance Kelvin connection point; critical for accurate gate control and current sensing in high-di/dt applications.
Gate (G)	Control terminal for channel modulation	High-impedance input requiring 10 V for full enhancement; internal R_G = 2.2 Ω affects switching speed and ringing susceptibility.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Rated for 1166 A/μs - prevents snap-off failure during fast turn-off of inductive loads in BLDC and OR-ing circuits.
Fully characterized SOA	Validated safe operating area up to 100 A at 40 V for 100 μs pulses - enables confident design without derating in bridge-leg fault conditions.
Improved dynamic dV/dt ruggedness	Rated for >10 V/ns - suppresses false turn-on in high-speed half-bridge configurations with fast bus transients.
Avalanche-rated construction	1000 mJ single-pulse E_AS with thermal failure model validated - eliminates need for external snubbers in brushed motor H-bridges.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: High-power 24 V automotive seat/mirror actuators with PWM-controlled H-bridge.

IC Role / Device Role / Timing Role: Low-side switch in dual N-channel half-bridge configuration handling bidirectional 150 A peak currents.

Use Value: 1.4 mΩ R_DS(on) reduces I²R loss by >35% vs. legacy 2.5 mΩ devices, extending battery runtime and limiting junction temperature rise.

Use Scenario: 3-phase inverter for e-bike mid-drive motor with space-constrained heatsinking.

IC Role / Device Role / Timing Role: Upper-leg switch in 6-pack inverter, operating at 16 kHz with synchronous rectification during freewheeling.

Use Value: 30 ns t_rr and soft-recovery body diode minimize shoot-through risk and reduce voltage spikes during commutation.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: 40 V/100 A secondary-side rectification in telecom DC/DC brick with <1% conduction loss target.

IC Role / Device Role / Timing Role: Active replacement for Schottky diode in forward converter synchronous rectifier stage.

Use Value: 1.0–1.3 V V_SD at 100 A yields ~50% lower forward drop than 45 V Schottky, cutting rectifier losses by 4.2 W at full load.

Use Scenario: Redundant 28 V aircraft avionics power supply with hot-swap and reverse-current blocking.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET for ideal diode function with active gate control.

Use Value: 195 A package rating and 1000 mJ E_AS ensure survival during load dump transients and inrush current events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS7437PBF	D2Pak package; R_θJA = 40 °C/W (vs. 0.65 °C/W R_θJC); identical die and R_DS(on)	Better suited for PCB-mount-only designs without external heatsink; lower assembly cost but higher thermal resistance.	Select when board-level thermal management suffices and TO-262 mechanical mounting is impractical.
STL220N4F7AG	40 V, 220 A, 0.95 mΩ typ., H2PAK-2 package; higher current density but unverified avalanche rating	Enables smaller footprint in space-constrained inverters; lacks published E_AS data - unsuitable for unclamped inductive switching.	Choose only where avalanche stress is absent and layout allows tighter thermal coupling to heatsink.

Compared with IRFS7437PBF, the TO-262 variant offers superior thermal path to heatsink and higher pulse current headroom; versus STL220N4F7AG, IRFSL7437PBF trades 0.45 mΩ higher R_DS(on) for guaranteed 1000 mJ avalanche robustness and mature application validation in motor control.

Availability

IRFSL7437PBF is available at Aetrix Electronics and suitable for brushed motor drive, BLDC inverter, and synchronous rectifier applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing for safety-critical systems.

Supply support for IRFSL7437PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and renewable energy systems where thermal stability and ruggedness under transient stress are mandatory.

FAQ

What is the maximum continuous drain current for IRFSL7437PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 180 A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capacity under thermal constraint, distinct from the 195 A package-limited rating at 25°C case temperature. Derating follows linear thermal slope of 3.0 W/°C beyond 25°C.

Can IRFSL7437PBF be used in parallel configurations without current-sharing resistors?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with junction temperature) enables inherent current sharing in parallel operation. However, matched gate drive layout, symmetrical PCB traces, and individual gate resistors (≥5 Ω) are required to prevent oscillation and ensure balanced dynamic current distribution across devices.

Is the body diode of IRFSL7437PBF suitable for reverse recovery in hard-switched PFC stages?

No - while the body diode has fast t_rr = 30 ns and soft recovery characteristics, it is not rated for continuous reverse recovery stress in boost PFC. Its Q_rr = 24 nC and I_RRM = 1.3 A are optimized for motor freewheeling and synchronous rectification, not high-frequency, high-dI/dt PFC diode replacement.

Does IRFSL7437PBF require gate clamping for 12 V logic-level drive?

No - its absolute maximum V_GS rating is ±20 V, and gate threshold is 2.2–3.9 V, making it fully compatible with standard 12 V gate drivers. However, a 15 V gate drive is recommended to ensure robust enhancement margin across temperature and process variation, especially in high-noise motor drive environments.

IRFSL7437PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL7437PBF FAQ

1.How can I place an order for IRFSL7437PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7437PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7437PBF reliable?

The price and inventory of IRFSL7437PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7437PBF is usually 5 days.

3.What payment methods are accepted for IRFSL7437PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7437PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL7437PBF?

IRFSL7437PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7437PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7437PBF?

For technical support, including IRFSL7437PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7437PBF requirements.

6.How does Aetrix verify that IRFSL7437PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7437PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7437PBF meets industry standards.

7.What is the process for return or replacement of IRFSL7437PBF?

All IRFSL7437PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7437PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7437PBF part is unused and in its original packaging.

Return procedure for IRFSL7437PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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