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Infineon Technologies IRFSL7437TRLPBF

Part No.:
IRFSL7437TRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRFSL7437TRLPBF.pdf
Description:
MOSFET N-CH 40V 195A TO262
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,228

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Product details

Overview

IRFSL7437TRLPBF from Infineon Technologies is a 40V, 195A (package-limited), N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (ISOTOP) package with 1.4 mΩ typical RDS(on) at VGS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive topologies. It features enhanced body diode dV/dt and dI/dt capability, 1000 A pulsed source current rating, and 100 mJ single-pulse avalanche energy.

For engineers reviewing the IRFSL7437TRLPBF datasheet, IRFSL7437TRLPBF pinout, IRFSL7437TRLPBF application, or IRFSL7437TRLPBF equivalent, key selection criteria include its 1.4 mΩ on-resistance at 10 V gate drive, 195 A continuous package-limited current, robust 1000 A body diode surge capability, and validated performance in BLDC inverter half-bridges and OR-ing power switches.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted charge balancing to achieve ultra-low RDS(on) while maintaining high dV/dt immunity (>4.5 V/ns) and controlled reverse recovery (Qrr = 24 nC at TJ = 25°C). Its body diode is fully characterized for hard commutation in resonant converters.

The device operates with gate threshold voltage of 2.2–3.9 V and exhibits low gate charge (Qg = 150–225 nC), enabling efficient switching at frequencies up to 500 kHz in DC/DC phases and motor phase-legs. Thermal resistance RθJC is 0.65°C/W, supporting high-power density PCB mounting.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum blocking voltage for 12–24 V bus systems with margin against transients.
RDS(on) typ. 1.4 mΩ @ VGS = 10 V - Enables <1.4 W conduction loss at 100 A, critical for thermal management in compact inverters.
ID (package) 195 A @ TC = 25°C - Real-world current limit defined by bond wire and leadframe, not silicon.
Qg 150–225 nC - Determines gate driver power requirement and switching speed in high-frequency PWM stages.
EAS 100 mJ (single pulse) - Supports unclamped inductive switching in motor drive fault conditions without failure.
Qrr 24 nC @ TJ = 25°C - Low reverse recovery charge reduces turn-on losses and EMI in synchronous rectifiers.
RθJC 0.65°C/W - Enables direct heatsink mounting with minimal thermal interface resistance for >200 W dissipation.

Pinout & Package

IRFSL7437TRLPBF is housed in a TO-262 (ISOTOP) package with isolated metal tab, designed for low-inductance, high-current PCB mounting and direct heatsink attachment. The package supports >200 A peak current and provides creepage/clearance compliant with IPC-2221B Class B.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current-carrying terminal (connected to die backside) Electrically tied to metal tab; must be isolated from PCB ground unless system design requires common-source configuration.
Source (S) Reference node for gate drive and current sensing Low-inductance Kelvin connection point for shunt-based current monitoring; shared with internal body diode cathode.
Gate (G) Control electrode for channel modulation High-impedance input requiring <225 nC charge; sensitive to ESD-requires gate resistor (RG ≥ 5 Ω) and TVS protection in noisy environments.

Key Features

Feature Design Value
Enhanced body diode dI/dt capability 1166 A/μs - Enables reliable operation in hard-switched synchronous rectification without oscillation or latch-up.
Characterized Coss eff. (ER) 1310 pF - Predictable output capacitance for ZVS timing in resonant LLC and phase-shifted full-bridge designs.
Avalanche-rated SOA Validated per Fig. 15 up to 100 μs pulses - Allows safe operation during short-circuit events in motor drives without external crowbar.
Lead-free & halogen-free construction Complies with JEDEC J-STD-020D and RoHS 2011/65/EU - Supports lead-free reflow profiles (peak 260°C) and environmental compliance programs.
Improved gate ruggedness ±20 V VGS rating - Withstands gate overvoltage transients in high-noise industrial motor control environments.

Applications

Brushed DC Motor Drive BLDC Inverter Half-Bridge

Use Scenario: High-current H-bridge for cordless power tools operating from 18–24 V Li-ion packs.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase bridge, conducting up to 195 A peak during stall conditions.

Use Value: 1.4 mΩ RDS(on) limits I²R loss to <54 W at 195 A, enabling compact heatsink-less mechanical integration.

Use Scenario: Upper and lower switches in 3-phase BLDC inverter for e-bike controller rated at 350 W per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, leveraging fast body diode recovery (trr = 30 ns) to reduce shoot-through risk.

Use Value: Qrr = 24 nC minimizes turn-on loss during commutation, improving efficiency by 1.2% at 20 kHz PWM.

Synchronous Rectifier OR-ing Power Switch

Use Scenario: Secondary-side switch in 48 V → 12 V isolated DC/DC converter for telecom shelf power.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes, driven synchronously with primary-side PWM.

Use Value: 1.0–1.3 V VSD forward drop at 100 A cuts conduction loss by 65% vs. 40 V Schottky, reducing thermal load by 42 W.

Use Scenario: Redundant 24 V DC power path selector in industrial PLC backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Ideal diode replacement with reverse polarity protection and current limiting via gate control.

Use Value: 1000 A pulsed source current rating handles 50 ms inrush surges during hot-insertion without bond wire fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFS7437PbF D2Pak package (vs. TO-262); identical silicon, RDS(on), and ratings; RθJC = 0.75°C/W (slightly higher thermal resistance). Better suited for surface-mount automated assembly; less suitable for bolt-down heatsinking due to plastic body thermal barrier. Select when using SMT reflow process and board space permits larger footprint; avoid where direct metal heatsink contact is required.
IXTH195N40L2 Trench gate silicon; 1.6 mΩ RDS(on); 195 A rating; higher Qg (270 nC); no specified EAS rating. Lower gate drive loss but slower switching; lacks documented avalanche capability for fault-tolerant motor drives. Prefer for fixed-frequency, low-dV/dt DC/DC where avalanche robustness is secondary to gate drive simplicity.

Compared with IRFSL7437TRLPBF, IRFS7437PbF trades mechanical mounting flexibility for SMT compatibility, while IXTH195N40L2 offers alternative gate drive behavior but omits avalanche validation-making IRFSL7437TRLPBF the only choice for unclamped inductive switching in safety-critical motor control.

Availability

IRFSL7437TRLPBF is available at Aetrix Electronics and suitable for brushed motor drive, BLDC inverter, and synchronous rectifier applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM production.

Supply support for IRFSL7437TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in motor drives, server PSUs, and renewable energy inverters.

FAQ

What is the maximum continuous drain current for IRFSL7437TRLPBF at 100°C case temperature?

The maximum continuous drain current at TC = 100°C is 100 A, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, VGS @ 10 V (Silicon Limited)." This reflects thermal derating due to junction-to-case thermal resistance and ambient constraints-not package limitation, which governs the 195 A rating at 25°C.

Can IRFSL7437TRLPBF be used in avalanche mode for circuit protection?

Yes-IRFSL7437TRLPBF is fully characterized for single-pulse avalanche operation with EAS = 100 mJ at TJ = 25°C. Repetitive avalanche is permitted if junction temperature remains ≤175°C, per Figure 15 and AN-1005 guidelines. It is validated for unclamped inductive switching in motor drive fault conditions.

Is the TO-262 package of IRFSL7437TRLPBF electrically isolated?

No-the TO-262 (ISOTOP) package has an electrically active metal tab connected directly to the Drain terminal. The tab must be electrically insulated from the heatsink or chassis unless the system design intentionally references Drain as the common potential. Insulating pads or shoulder washers are required for safe mounting.

What is the recommended gate resistor value for hard-switched 20 kHz BLDC inverter operation?

A gate resistor of 5–10 Ω is recommended to balance switching speed and ringing suppression. At 100 A load and 10 V gate drive, this yields ~20–40 ns rise/fall times (per tr/tf specs), minimizing overlap loss while containing dV/dt-induced Miller turn-on. Values below 3 Ω increase EMI risk; above 22 Ω degrade efficiency unnecessarily.

IRFSL7437TRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®, StrongIRFET™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7330 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRFSL7437TRLPBF FAQ

1.How can I place an order for IRFSL7437TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7437TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7437TRLPBF reliable?

The price and inventory of IRFSL7437TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7437TRLPBF is usually 5 days.

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IRFSL7437TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7437TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7437TRLPBF?

For technical support, including IRFSL7437TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7437TRLPBF requirements.

6.How does Aetrix verify that IRFSL7437TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7437TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7437TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFSL7437TRLPBF?

All IRFSL7437TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7437TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7437TRLPBF part is unused and in its original packaging.

Return procedure for IRFSL7437TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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