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Infineon Technologies IRFSL7440PBF
- Part No.:
- IRFSL7440PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFSL7440PBF.pdf
- Description:
- MOSFET N CH 40V 120A TO-262
- Quantity:
- Payment:
- Shipping:
Inventory:995
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Product details
Overview
IRFSL7440PBF from Infineon Technologies is a 40V, 208A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I2PAK) package, optimized for high-current synchronous rectification and bridge-leg switching in DC/DC converters, BLDC motor drives, and OR-ing applications. It delivers 2.0 mΩ typical RDS(on) at VGS = 10 V, supports 100 A continuous body diode conduction, and features enhanced dV/dt ruggedness and 772 A pulsed source current capability.
For engineers reviewing the IRFSL7440PBF datasheet, IRFSL7440PBF pinout, IRFSL7440PBF application, or IRFSL7440PBF equivalent, key selection criteria include its 2.5 mΩ max RDS(on), 0.72 °C/W junction-to-case thermal resistance, 90 nC total gate charge, 680 pF output capacitance, and validated avalanche energy rating of 560 mJ under single-pulse conditions.
Technical Context
This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region design to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its body diode exhibits 24 ns reverse recovery time and 17 nC Qrr at TJ = 25°C, enabling efficient hard-switched and resonant topologies.
The device operates with a 2.2–3.9 V gate threshold voltage and integrates internal 2.6 Ω gate resistance to dampen oscillation during fast switching. Its SOA is limited by RDS(on) in linear region and package thermal constraints above 100 A, with safe operation up to 175°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum drain-source blocking voltage before avalanche onset; defines system bus voltage ceiling in 12–24 V DC/DC and motor drive rails. |
| RDS(on) typ. | 2.0 mΩ @ VGS = 10 V, ID = 100 A - Enables <1.0 W conduction loss at 100 A, critical for thermally constrained high-efficiency power stages. |
| ID cont. | 208 A @ TC = 25°C - Continuous current rating based on junction temperature limit; actual usable current depends on heatsinking and case temperature. |
| Qg | 90 nC max - Total gate charge determines driver strength requirement; enables ~100 kHz switching with standard 2 A peak gate drivers. |
| EAS | 560 mJ single-pulse - Avalanche energy rating ensures survivability during inductive turn-off transients without external snubbers in half-bridge configurations. |
| RθJC | 0.72 °C/W - Junction-to-case thermal resistance confirms direct-mount thermal path efficiency; requires <1.1 N·m mounting torque for optimal heat transfer. |
| VSD | 0.9–1.3 V @ IS = 100 A - Body diode forward voltage impacts synchronous rectifier conduction loss and dead-time optimization. |
Pinout & Package
IRFSL7440PBF uses the TO-262 (I2PAK) package: 3-pin, through-hole, isolated tab (drain-connected), with 50 pcs/tube packaging. The metal tab serves as the drain terminal and primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V gate drive to fully enhance channel; 2.6 Ω internal resistance reduces ringing but increases turn-on delay (~24 ns). |
| Drain (D) | High-side current sink / power return | Connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits; handles full load current and avalanche energy. |
| Source (S) | Reference node / current return | Low-impedance source connection for gate drive loop; ties to power ground or low-side switch source; carries 100 A continuous body diode current. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced dV/dt ruggedness | Rated for >6.8 V/ns diode recovery dv/dt - prevents false turn-on in high-speed bridge legs with fast bus transients. |
| Ultra-low RDS(on) | 2.0 mΩ typ. at 100 A - reduces conduction loss by >30% vs. legacy 40 V MOSFETs, directly improving 12 V input DC/DC converter efficiency. |
| Optimized body diode | 24 ns trr, 17 nC Qrr - enables shorter dead-time in synchronous rectifiers without shoot-through risk, increasing light-load efficiency. |
| Lead-free RoHS compliance | No Pb, Br, or halogens - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating pre-bake requirements for surface-mount assembly. |
| Thermally robust SOA | Validated 100 μs pulse width, 208 A, 40 V - supports reliable operation in short-circuit events and inverter phase-leg fault conditions. |
Applications
| Brushed Motor Drive | BLDC Motor Drive |
|---|---|
Use Scenario: H-bridge control of 24 V cordless power tools with peak currents up to 180 A. IC Role / Device Role / Timing Role: Low-side and high-side switching element in discrete half-bridge configuration; handles PWM commutation at 15–25 kHz. Use Value: 2.0 mΩ RDS(on) limits I²R loss to <6.5 W per FET at 180 A, reducing heatsink size by 40% versus 3.5 mΩ alternatives. |
Use Scenario: Six-step commutation in 48 V e-bike controller with sensorless back-EMF detection. IC Role / Device Role / Timing Role: Upper and lower FET in three-phase inverter leg; switches at 10–20 kHz with 200 ns dead-time. Use Value: 24 ns trr and 6.8 V/ns dv/dt rating prevent cross-conduction during fast voltage transitions across motor windings. |
| Synchronous Rectification | OR-ing Power Switch |
Use Scenario: Secondary-side rectification in 48 V → 12 V isolated LLC resonant converter for telecom power systems. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switching. Use Value: 0.9 V VSD and 2.0 mΩ RDS(on) reduce conduction loss by 65% vs. 40 V/120 A Schottky, improving full-load efficiency from 92.1% to 94.7%. |
Use Scenario: Redundant 24 V power supply combining with ideal diode control in industrial PLC backplane. IC Role / Device Role / Timing Role: OR-ing switch placed between two independent 24 V inputs; controlled by dedicated ideal diode IC to prevent backfeed. Use Value: 772 A pulsed source current rating supports 200% overload surge handling; 0.72 °C/W RθJC enables stable operation at 120 A continuous with forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFS7440PbF (D2PAK) | Same die, but D2PAK package; RθJC = 0.75 °C/W; 50 pcs/tube; no lead-frame isolation. | Higher thermal resistance and lower mechanical robustness; unsuitable for high-vibration environments requiring TO-262's screw-mount stability. | Select when PCB space allows larger footprint and cost sensitivity outweighs thermal/mounting advantages. |
| STL220N4F7AG (TO-263) | 40 V, 220 A, 1.8 mΩ typ., but Qg = 115 nC; different gate threshold (2.5–3.5 V); not avalanche-rated. | Lacks specified EAS; requires external avalanche protection in inductive switching; higher gate drive power needed. | Prefer only in non-inductive, soft-switched applications where lowest RDS(on) dominates and avalanche immunity is not required. |
Compared with IRFS7440PbF, IRFSL7440PBF offers superior mechanical mounting and marginally better thermal resistance; compared with STL220N4F7AG, it provides guaranteed avalanche survival and tighter VGS(th) distribution-critical for consistent turn-on timing in multi-phase bridges.
Availability
IRFSL7440PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for IRFSL7440PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This MOSFET belongs to Infineon's HEXFET® family, engineered specifically for high-efficiency, high-reliability power conversion in motor drives, server PSUs, and renewable energy systems where low RDS(on), ruggedness, and thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRFSL7440PBF at 100°C case temperature?
The maximum continuous drain current is 147 A at TC = 100°C, derated from 208 A at 25°C using the linear derating factor of 1.4 W/°C. This reflects thermal limitation of the TO-262 package under real-world heatsink conditions, not silicon capability.
Does IRFSL7440PBF support gate drive voltages below 10 V?
Yes-it fully enhances at VGS ≥ 6.0 V, delivering ≤3.0 mΩ RDS(on). At VGS = 5.5 V, RDS(on) rises to ~4.0 mΩ. Gate threshold is specified 2.2–3.9 V, enabling compatibility with 5 V logic-level controllers when paired with appropriate gate drivers.
Can IRFSL7440PBF be used in parallel configurations?
Yes-the positive temperature coefficient of RDS(on) (1.6× increase from 25°C to 175°C) enables inherent current sharing. Successful parallel operation requires matched layout, identical gate drive impedance, and symmetrical thermal mounting to avoid thermal runaway.
Is the body diode suitable for reverse recovery in hard-switched PFC stages?
No-the body diode is optimized for synchronous rectification, not PFC boost diodes. Its 24 ns trr and 17 nC Qrr are insufficient for 100 kHz+ discontinuous conduction mode (DCM) PFC; dedicated ultrafast diodes or SiC Schottkys are recommended instead.
IRFSL7440PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4730 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFSL7440PBF FAQ
1.How can I place an order for IRFSL7440PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFSL7440PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFSL7440PBF reliable?
The price and inventory of IRFSL7440PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7440PBF is usually 5 days.
3.What payment methods are accepted for IRFSL7440PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7440PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFSL7440PBF?
IRFSL7440PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFSL7440PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFSL7440PBF?
For technical support, including IRFSL7440PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7440PBF requirements.
6.How does Aetrix verify that IRFSL7440PBF is sourced from the original manufacturer or authorized distributors?
All IRFSL7440PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7440PBF meets industry standards.
7.What is the process for return or replacement of IRFSL7440PBF?
All IRFSL7440PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7440PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFSL7440PBF part is unused and in its original packaging.
Return procedure for IRFSL7440PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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