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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL7530PBF

Name: IRFSL7530PBF
Brand: Infineon Technologies
SKU: IRFSL7530PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL7530PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL7530PBF.pdf

Description:: MOSFET N-CH 60V 195A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL7530PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 195A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-current switching in half-bridge and full-bridge topologies, synchronous rectification, and BLDC motor drives. It features 1.65 mΩ typical R_DS(on) at V_GS = 10 V, 524 mJ single-pulse avalanche energy, and enhanced body diode dV/dt capability up to 8.1 V/ns at T_J = 175°C.

For engineers reviewing the IRFSL7530PBF datasheet, IRFSL7530PBF pinout, IRFSL7530PBF application, or IRFSL7530PBF equivalent, this device is selected for high-efficiency, high-reliability power conversion where low conduction loss, robust avalanche performance, and fast body diode recovery (t_rr = 54 ns at 125°C) are critical in DC/DC converters, OR-ing circuits, and resonant-mode supplies.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and source bonding to achieve 195A continuous current handling in TO-262 while maintaining 0.40 °C/W junction-to-case thermal resistance. Its dynamic parameters-Q_g = 274 nC typ., Q_gd = 83 nC typ., and C_iss = 13703 pF-support controlled turn-on/turn-off in hard-switched bridge configurations up to 100 kHz.

The integrated body diode delivers 100A pulsed source current (I_SM) and 86 nC reverse recovery charge (Q_rr) at 25°C, enabling reliable operation in synchronous rectifier and bidirectional power flow applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 20 % margin.
R_DS(on) max	2.00 mΩ - Ensures ≤ 3.9 W conduction loss at 140 A DC, critical for thermal management in compact power stages.
I_D (pkg)	195 A - Package-limited continuous current defines PCB trace and heatsink sizing for sustained 150–200 A peak loads.
E_AS	524 mJ - Single-pulse avalanche energy rating enables unclamped inductive switching survival in motor drive fault conditions.
t_rr	54 ns at 125°C - Fast reverse recovery minimizes commutation loss and prevents shoot-through in synchronous rectifiers.
Q_g	274 nC - Gate charge value determines driver strength requirement: ≥ 2 A peak gate current needed for <100 ns switching.
dV/dt (diode)	8.1 V/ns - High body diode dv/dt immunity suppresses false turn-on during high-slew-rate transitions in bridge legs.

Pinout & Package

IRFSL7530PBF is housed in a TO-262 (ISOWATT-220) package with isolated tab, featuring three terminals: Drain (D), Source (S), and Gate (G). The drain-connected metal tab provides low-inductance, low-thermal-resistance path to heatsink (R_θJC = 0.40 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path	Connected to high-voltage rail or bridge output node; electrically tied to metal tab for thermal conduction.
S (Source)	Reference node for gate drive and current sensing	Low-impedance return path; used for shunt-based current monitoring and gate driver reference in high-side configurations.
G (Gate)	Control input for channel modulation	High-impedance MOS gate requiring 10 V for full enhancement; sensitive to ESD and requires RC snubbing in high-dV/dt environments.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	8.1 V/ns at 175°C - Prevents parasitic turn-on during fast voltage transients in half-bridge leg commutation.
Fully characterized avalanche SOA	524 mJ single-pulse, 1025 mJ thermally limited - Enables robust fault tolerance without external clamping in motor drive inverters.
Low R_DS(on) × Q_g figure of merit	≈ 548 Ω·nC - Balances conduction and switching losses for high-frequency (>50 kHz) DC/DC converter designs.
Lead-free, RoHS-compliant construction	Meets IPC/JEDEC J-STD-020D reflow profile - Supports lead-free assembly without solder joint reliability degradation.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48 V DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in dual half-bridge configuration, conducting up to 195 A DC with minimal I²R loss.

Use Value: 1.65 mΩ R_DS(on) reduces heat generation by >30 % vs. comparable 3 mΩ devices, extending battery runtime and enabling smaller heatsinks.

Use Scenario: Three-phase inverter stage for 48 V e-bike or scooter motor controllers.

IC Role / Device Role / Timing Role: High-current phase-leg switch operating at 16–20 kHz PWM with synchronous rectification during freewheeling.

Use Value: 54 ns t_rr at 125°C ensures clean commutation and eliminates need for external anti-parallel diodes, reducing BOM count and layout area.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48 V input, 12 V output isolated DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes, driven synchronously with primary-side controller timing signals.

Use Value: 2.00 mΩ max R_DS(on) cuts conduction loss to <0.5 W at 100 A, improving efficiency by 1.2 % over 3.5 mΩ alternatives at full load.

Use Scenario: Redundant 48 V power supply combining in data center rack PDUs and telecom shelf systems.

IC Role / Device Role / Timing Role: Unidirectional power path switch with fast turn-off to prevent backfeed during supply failure.

Use Value: 8.1 V/ns body diode dV/dt rating prevents false turn-on during rapid bus collapse, ensuring fail-safe isolation without auxiliary control logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.75 mΩ max, Q_g = 250 nC, TO-220FP package, R_θJC = 0.55 °C/W	Lower gate charge but higher thermal resistance limits sustained current to ~160 A at same case temperature.	Preferred when gate drive power budget is constrained and thermal design allows larger heatsink footprint.
IXFH75N60X3	600 V rating, R_DS(on) = 12.5 mΩ, TO-247 package, avalanche-rated to 1200 mJ	Higher voltage class sacrifices conduction efficiency for universal compatibility across 100–400 V systems.	Selected only when system architecture requires 600 V blocking capability; not suitable as direct replacement in 48 V designs.

Compared with STL220N6F7, IRFSL7530PBF delivers 195 A continuous current with superior thermal performance (0.40 vs. 0.55 °C/W), while IXFH75N60X3 trades conduction loss for voltage scalability-making IRFSL7530PBF optimal for fixed 48–60 V high-current applications demanding lowest possible R_DS(on) and proven avalanche ruggedness.

Availability

IRFSL7530PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFSL7530PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices since acquiring International Rectifier in 2015.

This device belongs to the StrongIRFET™ family-designed specifically for high-current, high-ruggedness power conversion in industrial motor drives, renewable energy inverters, and enterprise power supplies where reliability under repetitive stress is non-negotiable.

FAQ

What is the maximum continuous drain current for IRFSL7530PBF at 100°C case temperature?

The maximum continuous drain current is 195 A at T_C = 25°C, derating linearly to approximately 140 A at T_C = 100°C based on the 2.5 W/°C derating factor and 375 W maximum power dissipation. This limit is defined by wire bond capacity-not silicon-ensuring predictable failure mode under overload.

Does IRFSL7530PBF require a gate resistor for stability in half-bridge operation?

Yes-a gate resistor of 2.7 Ω minimum is recommended per the datasheet's switching time test circuit (Fig 24a) to dampen ringing caused by L_g–C_iss resonance. Without it, overshoot exceeding ±20 V gate rating may occur, risking oxide damage during fast dV/dt transitions in bridge configurations.

Can IRFSL7530PBF be used in parallel configurations for higher current handling?

Yes-its positive R_DS(on) temperature coefficient (1.65 → 2.00 mΩ from 25°C to 125°C) enables inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors to ensure simultaneous turn-on and avoid current imbalance during transients.

Is the TO-262 package of IRFSL7530PBF electrically isolated?

Yes-the TO-262 package features an isolated metal tab (drain-connected) with 2500 V RMS isolation rating per UL 60950-1. This allows direct mounting to a common heatsink without insulating hardware, simplifying thermal design while maintaining safety-critical creepage/clearance compliance.

IRFSL7530PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 411 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13703 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-262

IRFSL7530PBF FAQ

1.How can I place an order for IRFSL7530PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7530PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7530PBF reliable?

The price and inventory of IRFSL7530PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7530PBF is usually 5 days.

3.What payment methods are accepted for IRFSL7530PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7530PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL7530PBF?

IRFSL7530PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7530PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7530PBF?

For technical support, including IRFSL7530PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7530PBF requirements.

6.How does Aetrix verify that IRFSL7530PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7530PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7530PBF meets industry standards.

7.What is the process for return or replacement of IRFSL7530PBF?

All IRFSL7530PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7530PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7530PBF part is unused and in its original packaging.

Return procedure for IRFSL7530PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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