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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL7534PBF

Name: IRFSL7534PBF
Brand: Infineon Technologies
SKU: IRFSL7534PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL7534PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL7534PBF.pdf

Description:: MOSFET N-CH 60V 195A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL7534PBF from Infineon Technologies is a 60 V, 2.0 mΩ (typ), 195 A (package-limited) N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-current switching in motor drives and DC/DC converters. It delivers low conduction loss, robust avalanche capability (775 mJ), and enhanced body diode dV/dt (9.2 V/ns) for reliable operation in half-bridge and synchronous rectifier topologies.

For engineers reviewing the IRFSL7534PBF datasheet, IRFSL7534PBF pinout, IRFSL7534PBF application, or IRFSL7534PBF equivalent, key selection criteria include R_DS(on) at 100 A/10 V, gate charge (186 nC typ), avalanche energy rating, thermal resistance (R_θJC = 0.51 °C/W), and TO-262 mechanical compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and thick copper bonding to sustain 195 A continuous drain current at T_C = 25°C while maintaining 2.0 mΩ typical on-resistance. Its gate threshold voltage (2.1–3.7 V) ensures stable turn-on under wide V_GS margin, and its fully characterized C_oss (921 pF) and Q_gd (56 nC) support predictable hard-switching behavior in resonant and PWM topologies.

The device features thermally limited single-pulse avalanche energy of 775 mJ (L = 1 mH, I_AS = 39 A), validated per JEDEC JESD24-11, and exhibits enhanced body diode recovery with t_rr = 49 ns (T_J = 125°C) and Q_rr = 83 nC - critical for minimizing switching loss in OR-ing and BLDC inverter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 20% safety margin.
R_DS(on) (typ)	2.0 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.0 W conduction loss at 100 A, reducing heatsink requirements.
I_D (pkg)	195 A @ T_C = 25°C - Package-limited current defines practical max continuous output in TO-262 with standard heatsinking.
Q_g (typ)	186 nC - Determines gate driver power requirement; ~1.9 W avg. drive loss at 100 kHz, 12 V swing.
E_AS	775 mJ - Single-pulse unclamped inductive avalanche energy; enables robust fault handling without external snubbers.
R_θJC	0.51 °C/W - Junction-to-case thermal resistance; allows 294 W dissipation at ΔT = 150°C, matching TO-262 mounting constraints.
t_rr	49 ns @ T_J = 125°C - Body diode reverse recovery time; limits di/dt-induced voltage overshoot in high-frequency bridge legs.

Pinout & Package

IRFSL7534PBF uses the TO-262 (I²PAK) package: 3-pin, through-hole, isolated tab (drain-connected), with 0.150" lead pitch and 0.125" lead thickness. Mounting torque: 10 lbf·in (1.1 N·m). Thermal pad must be soldered to copper pour for R_θJC compliance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to metal tab; requires insulated mounting or direct heatsink contact with isolation washer.
Source	Reference node for gate drive and current return path	Low-inductance source connection essential to minimize V_GS noise during fast switching.
Gate	Control terminal for channel modulation	High-impedance input; requires <2.7 Ω series resistance to damp ringing and limit peak dI/dt during turn-on.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	9.2 V/ns at T_J = 175°C - Prevents spurious turn-on during high-speed commutation in half-bridge configurations.
Fully characterized avalanche SOA	775 mJ single-pulse energy with validated thermal failure boundary - eliminates need for external avalanche clamping in UPS and motor drive fault conditions.
Low C_oss effective capacitance	C_{oss eff.(TR)} = 1145 pF - Reduces capacitive turn-off loss and improves ZVS initiation in LLC resonant converters.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-609A Class 1 moisture sensitivity - supports standard reflow profiles without baking for TO-262 assembly.
Improved dynamic dV/dt ruggedness	Validated >50 V/ns immunity at V_DS = 0.8 × V_DSS - Ensures noise immunity in high-di/dt gate-drive environments.

Applications

Brushed Motor Drive

BLDC Inverter Half-Bridge

Use Scenario: 24–48 V DC brushed motor control in power tools and industrial actuators using H-bridge PWM.

IC Role / Device Role / Timing Role: High-side and low-side switching element with bidirectional current handling via body diode freewheeling.

Use Value: 2.0 mΩ R_DS(on) reduces I²R loss by >35% vs. legacy 3.5 mΩ MOSFETs, enabling 20% higher torque at same thermal budget.

Use Scenario: Upper and lower switches in 3-phase BLDC inverter for e-bike controllers operating at 20–50 kHz PWM.

IC Role / Device Role / Timing Role: Synchronous rectification switch with fast body diode recovery (49 ns) to minimize shoot-through risk and freewheeling loss.

Use Value: 9.2 V/ns dV/dt immunity prevents false turn-on during cross-conduction, improving reliability in compact, high-density motor modules.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in 48 V input, 12 V output isolated DC/DC converter for telecom power supplies.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes, driven synchronously with primary-side controller timing.

Use Value: 1.2 V V_SD forward drop at 100 A cuts conduction loss by 60% vs. 0.5 V Schottky, improving efficiency by 1.8% at full load.

Use Scenario: Redundant 48 V DC power rail OR-ing in server backplanes and industrial PLCs with hot-swap capability.

IC Role / Device Role / Timing Role: Unidirectional power path switch with fast turn-off (<93 ns fall time) to isolate failed rails within 100 ns.

Use Value: 0.51 °C/W R_θJC enables <2.5 W dissipation at 100 A, supporting >99.9% uptime in dual-supply architectures without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.8 mΩ (lower), but Q_g = 220 nC (higher); TO-220FP package, no isolated tab.	Lacks drain-isolated tab; unsuitable for heatsink-mounted drain configurations requiring electrical isolation.	Prefer when gate drive strength exceeds 2 A peak and mechanical isolation is not required.
IXFH180N06T2	R_DS(on) = 2.1 mΩ, Q_g = 170 nC, R_θJC = 0.45 °C/W; TO-247AC package with larger thermal footprint.	TO-247AC requires different PCB cutout and mounting hardware; higher cost and board area than TO-262.	Choose when junction temperature must stay below 150°C under sustained 200 A load with minimal heatsink mass.

Compared with STL220N6F7 and IXFH180N06T2, IRFSL7534PBF offers optimal balance of low R_DS(on), moderate Q_g, and TO-262's isolated-tab mechanical flexibility-making it preferred for space-constrained, thermally demanding motor and OR-ing designs where layout simplicity and thermal reliability are prioritized over marginal R_DS(on) reduction.

Availability

IRFSL7534PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power switches requiring stable component supply across industrial automation, e-mobility, and telecom infrastructure programs.

Supply support for IRFSL7534PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the StrongIRFET™ family, engineered specifically for high-efficiency, high-reliability power conversion in motor drives and DC/DC systems where ruggedness, low conduction loss, and predictable switching behavior are mandatory.

FAQ

What is the maximum continuous drain current for IRFSL7534PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 164 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced carrier mobility and increased R_DS(on) at elevated temperatures, and assumes proper heatsinking to maintain case temperature at or below 100°C.

Does IRFSL7534PBF support gate drive voltages below 10 V?

Yes - the gate threshold voltage ranges from 2.1 V to 3.7 V, and R_DS(on) is characterized down to V_GS = 6.0 V (2.6 mΩ max). However, full enhancement and minimum on-resistance require ≥10 V; operation at 8 V yields ~3.0 mΩ, increasing conduction loss by ~50% versus 10 V drive.

Can IRFSL7534PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (24 mV/°C V_BR drift) and matched transconductance enable stable current sharing. Parallel operation requires matched gate resistors, symmetrical PCB layout, and shared heatsinking to ensure ΔT_J ≤ 5°C between devices for balanced loading.

Is the TO-262 package of IRFSL7534PBF electrically isolated?

No - the metal tab is internally connected to the drain terminal. Electrical isolation must be achieved externally using insulating washers or thermal pads rated for ≥60 V working voltage. The datasheet explicitly states "Drain connected to tab" in the package outline diagram and absolute maximum ratings section.

IRFSL7534PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 279 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10034 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-262

IRFSL7534PBF FAQ

1.How can I place an order for IRFSL7534PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7534PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7534PBF reliable?

The price and inventory of IRFSL7534PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7534PBF is usually 5 days.

3.What payment methods are accepted for IRFSL7534PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7534PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL7534PBF?

IRFSL7534PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7534PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7534PBF?

For technical support, including IRFSL7534PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7534PBF requirements.

6.How does Aetrix verify that IRFSL7534PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7534PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7534PBF meets industry standards.

7.What is the process for return or replacement of IRFSL7534PBF?

All IRFSL7534PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7534PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7534PBF part is unused and in its original packaging.

Return procedure for IRFSL7534PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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