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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL7540PBF

Name: IRFSL7540PBF
Brand: Infineon Technologies
SKU: IRFSL7540PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL7540PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL7540PBF.pdf

Description:: MOSFET N-CH 60V 110A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL7540PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 110A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 4.2 mΩ typical R_DS(on) at V_GS = 10 V, supports 430 A pulsed drain current, and features enhanced body diode dV/dt (11 V/ns) and dI/dt capability for robust synchronous rectification and half-bridge operation.

For engineers reviewing the IRFSL7540PBF datasheet, IRFSL7540PBF pinout, IRFSL7540PBF application, or IRFSL7540PBF equivalent, key selection criteria include its 60 V V_DS, 4.2 mΩ R_DS(on), 88 nC total gate charge, 110 A continuous drain rating at T_C = 25°C, and TO-262 thermal performance with R_θJC = 0.95°C/W - critical for high-efficiency power stage design in battery-powered and industrial converters.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss while maintaining high avalanche ruggedness (E_AS = 180 mJ single-pulse). Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, and its fully characterized C_iss (4555 pF), C_oss (415 pF), and Q_gd (28 nC) support precise switching loss estimation in hard-switched topologies.

The device integrates a fast, soft-recovery body diode (t_rr = 33 ns at T_J = 25°C, Q_rr = 36 nC) with 11 V/ns peak dv/dt immunity, enabling stable operation in resonant and synchronous rectifier circuits without external snubbers. Its SOA is validated up to 100 µs pulse width and extends into linear region operation under controlled gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 60 V automotive/industrial rails.
R_DS(on) typ.	4.2 mΩ at V_GS = 10 V, I_D = 65 A - Enables <1 W conduction loss at 65 A, reducing heatsink requirements in high-current paths.
I_D cont.	110 A at T_C = 25°C - Supports high-power motor phase legs and primary-side switches in 500–1000 W DC/DC stages.
Q_g total	88 nC max - Determines gate driver power demand; enables efficient 100 kHz switching with ≤2 A peak driver capability.
E_AS	180 mJ single-pulse - Allows unclamped inductive switching in half-bridge configurations without external clamping.
t_r/t_f	76 ns / 56 ns - Fast edge rates minimize transition losses in hard-switched SMPS and BLDC gate drivers.
V_SD	1.2 V at I_S = 65 A - Low forward drop improves efficiency in synchronous rectification and OR-ing applications.

Pinout & Package

IRFSL7540PBF uses the TO-262 (ISOTOP) package: 3-pin, through-hole, isolated tab, with drain-connected metal tab for direct heatsinking. Thermal resistance R_θJC = 0.95°C/W enables >100 W dissipation with moderate heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path and thermal interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Power return and gate reference node	Low-impedance source connection essential for stable gate drive; common node for current sensing and feedback.
Gate	Control terminal for channel modulation	High-impedance input requiring <2.2 Ω series resistance to damp ringing; sensitive to ESD (±20 V absolute max).

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	11 V/ns at T_J = 175°C - Prevents spurious turn-on during high-speed commutation in bridge legs.
Fully characterized avalanche SOA	180 mJ single-pulse, 313 mJ thermally limited - Enables reliable unclamped inductive switching without external protection.
Low gate charge asymmetry	Q_gd/Q_gs = 28/22 ≈ 1.27 - Reduces Miller-induced shoot-through risk in high-side switching with standard gate drivers.
RoHS-compliant lead-free construction	Meets JEDEC J-STD-020 reflow profile - Compatible with standard Pb-free PCB assembly processes without derating.
Thermally robust junction	T_J range: –55°C to +175°C - Sustains operation in engine bay, industrial motor control, and high-ambient environments.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48 V DC motors in power tools and robotics.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in full-bridge topology; handles bidirectional current up to 110 A.

Use Value: 4.2 mΩ R_DS(on) minimizes I²R heating during stall conditions; 430 A pulsed rating absorbs startup surges without failure.

Use Scenario: Three-phase inverter stage for 400–1000 W BLDC fans, pumps, and e-bike controllers.

IC Role / Device Role / Timing Role: Phase-leg switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 33 ns t_rr and 11 V/ns dv/dt rating prevent cross-conduction and false triggering during high di/dt commutation.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switching in isolated 60 V output DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement for Schottky diode in forward/flyback secondary; driven synchronously with primary side.

Use Value: 1.2 V V_SD and low Q_rr reduce conduction and recovery losses by >40% vs. 60 V Schottky alternatives.

Use Scenario: Redundant 48 V input power combining in industrial PLCs and network equipment.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with reverse current blocking and low forward drop.

Use Value: 60 V V_DS and 110 A rating support dual 48 V inputs with hot-swap capability; R_DS(on) ensures <0.5 W loss at 50 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N6F6	R_DS(on) = 4.8 mΩ (typ), Q_g = 95 nC, TO-220 package	Higher R_θJA (62°C/W) limits power density; requires larger heatsink in same footprint	Prefer when cost sensitivity outweighs thermal performance; not suitable for TO-262 board space constraints.
IXTH110N60L2	600 V rating, R_DS(on) = 12.5 mΩ, TO-247 package	Designed for high-voltage PFC and offline SMPS; excessive voltage rating adds capacitance and cost for 48 V systems	Select only if future-proofing for higher bus voltages is required; over-spec'd for 60 V applications.

Compared with STP110N6F6 and IXTH110N60L2, IRFSL7540PBF offers optimal balance of low R_DS(on), moderate gate charge, and TO-262 thermal efficiency for 48 V industrial power stages - delivering 15% lower conduction loss than STP110N6F6 and 3× lower switching loss than IXTH110N60L2 in identical 100 kHz converter designs.

Availability

IRFSL7540PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy OEM programs.

Supply support for IRFSL7540PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with legacy expertise from International Rectifier's HEXFET® MOSFET portfolio.

This device belongs to the StrongIRFET™ family, engineered for high-current, high-ruggedness power switching in motor control and industrial power conversion - emphasizing avalanche reliability, body diode robustness, and thermal stability under dynamic load conditions.

FAQ

What is the maximum safe operating temperature for IRFSL7540PBF?

The device supports continuous operation from –55°C to +175°C junction temperature. Derating begins above T_C = 25°C at 1.1 W/°C; maximum case temperature is 175°C. For sustained 110 A operation, heatsink design must maintain T_C ≤ 75°C per Fig 2 and SOA curves on page 5 of the datasheet.

Can IRFSL7540PBF be used in synchronous rectification without external gate drive timing control?

No - it requires active gate control synchronized to the primary-side switching waveform. The MOSFET has no internal timing circuitry; external controller (e.g., UCC24612 or discrete logic) must drive the gate with precise dead-time management to avoid shoot-through during body diode conduction intervals.

Is IRFSL7540PBF suitable for linear (analog) regulator applications?

Yes - its SOA chart (Fig 10) validates safe linear operation up to 100 µs pulses at 100 A and 20 V, and DC operation is permitted within the R_DS(on)-limited region below 10 A at 60 V. However, thermal design must account for continuous power dissipation; R_θJC = 0.95°C/W mandates forced-air or large heatsinks for >10 W dissipation.

Does IRFSL7540PBF require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to damp oscillation and limit peak current. For 100 kHz switching with 2 A peak driver, 2.2 Ω is recommended (per R_G = 2.2 Ω test condition in datasheet). Lower values (1.0–1.5 Ω) improve switching speed but increase EMI; higher values (>5 Ω) reduce losses but extend t_r/t_f and raise switching loss.

IRFSL7540PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 65A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4555 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL7540PBF FAQ

1.How can I place an order for IRFSL7540PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7540PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7540PBF reliable?

The price and inventory of IRFSL7540PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7540PBF is usually 5 days.

3.What payment methods are accepted for IRFSL7540PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7540PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL7540PBF?

IRFSL7540PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7540PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7540PBF?

For technical support, including IRFSL7540PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7540PBF requirements.

6.How does Aetrix verify that IRFSL7540PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7540PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7540PBF meets industry standards.

7.What is the process for return or replacement of IRFSL7540PBF?

All IRFSL7540PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7540PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7540PBF part is unused and in its original packaging.

Return procedure for IRFSL7540PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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