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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL7787PBF

Name: IRFSL7787PBF
Brand: Infineon Technologies
SKU: IRFSL7787PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL7787PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL7787PBF.pdf

Description:: MOSFET N-CH 75V 76A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL7787PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 76A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-current switching in half-bridge and full-bridge topologies with R_DS(on) = 6.9 mΩ (typ.) at V_GS = 10 V and I_D = 46 A. It delivers robust avalanche energy (E_AS = 144 mJ), enhanced body diode dV/dt capability (10 V/ns), and supports brushed/BLDC motor drives and synchronous rectification.

For engineers reviewing the IRFSL7787PBF datasheet, IRFSL7787PBF pinout, IRFSL7787PBF application, or IRFSL7787PBF equivalent, this device is selected for high-efficiency DC/DC converters, OR-ing power switches, and resonant-mode supplies where low conduction loss, fast switching (t_r = 48 ns), and rugged body diode recovery (Q_rr = 42 nC at 25°C) are critical.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted charge balancing to achieve low R_DS(on) while maintaining strong dynamic dV/dt immunity (≥10 V/ns) and fully characterized avalanche SOA. Its gate threshold voltage (V_GS(th) = 2.1–3.7 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device features tightly specified dynamic parameters: Q_g = 73 nC (typ.), Q_gd = 23 nC (typ.), and C_oss = 330 pF (typ.) at V_DS = 25 V - enabling precise dead-time control and reduced switching losses in hard-switched bridge configurations up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage for 48 V bus systems with 50% safety margin against transients.
R_DS(on) (typ.)	6.9 mΩ at V_GS = 10 V, I_D = 46 A - Enables ≤3.3 W conduction loss at 76 A continuous current.
I_D (25°C)	76 A - Supports high-power motor drive stages without parallel devices in TO-262 package.
E_AS	144 mJ (single-pulse, T_J = 25°C) - Withstands unclamped inductive switching events in half-bridge leg shoot-through scenarios.
Q_g	73 nC (typ.) - Determines gate driver power requirement; compatible with 1 A peak drivers for ≤100 kHz operation.
t_r/t_f	48 ns / 39 ns - Enables fast transition through Miller plateau, reducing switching loss in PWM-controlled inverters.
V_SD	1.2 V at I_S = 46 A - Low forward drop of integrated body diode improves efficiency in synchronous rectifier mode.

Pinout & Package

IRFSL7787PBF uses the TO-262 (I²PAK) package: 3-pin, single-ended, isolated tab (drain-connected), surface-mount compatible with through-hole heatsinking. Tab is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically tied to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current return	Low-inductance connection point for source loop; critical for minimizing switching oscillation in high-di/dt applications.
Gate	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD; must be driven with controlled slew rate to avoid ringing.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	10 V/ns at T_J = 175°C - Prevents false turn-on during high-speed commutation in BLDC inverters.
Fully characterized avalanche SOA	Single-pulse E_AS = 144 mJ, repetitive E_AR = 209 mJ - Enables reliable operation in unclamped inductive switching without external snubbers.
Low gate charge asymmetry	Q_gd/Q_g = 31% - Reduces Miller-induced delay and improves controllability in high-side switching.
Thermally optimized R_θJC	1.2 °C/W - Allows 125 W power dissipation with ≤150°C junction rise over 25°C case temperature.
RoHS-compliant lead-free finish	Meets JEDEC J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without baking.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: High-torque 24–48 V DC motor control in power tools and industrial actuators using H-bridge topology.

IC Role / Device Role / Timing Role: Low-side and high-side switching element handling bidirectional 76 A peak current with <50 ns switching transitions.

Use Value: 6.9 mΩ R_DS(on) reduces I²R loss by >35% vs. legacy 12 mΩ MOSFETs, extending battery runtime by 8–12% at full load.

Use Scenario: Three-phase inverter driving permanent magnet BLDC motors in HVAC compressors and e-bike controllers.

IC Role / Device Role / Timing Role: Phase-leg switch operating at 15–25 kHz PWM with synchronized body diode commutation.

Use Value: 42 nC Q_rr and 10 V/ns dV/dt rating suppress shoot-through risk and reduce gate driver stress during zero-crossing transitions.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48 V input telecom DC/DC modules delivering ≥1 kW output.

IC Role / Device Role / Timing Role: Active replacement of Schottky diodes in LLC resonant converter secondary, driven synchronously with primary side.

Use Value: 1.2 V V_SD and 6.9 mΩ R_DS(on) cut conduction loss by 55% versus 0.5 V Schottky, improving full-load efficiency from 93.2% to 95.1%.

Use Scenario: Redundant 24–48 V DC power supply combining with ideal diode control in server backplanes and industrial PLCs.

IC Role / Device Role / Timing Role: Unidirectional current switch enabling hot-swap and fault isolation between parallel power rails.

Use Value: 280 A pulsed current rating and 144 mJ avalanche energy tolerate transient reverse recovery faults without latch-up or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 9.5 mΩ (max), V_DSS = 75 V, Q_g = 120 nC - higher gate charge and conduction loss.	Limited to ≤50 kHz switching due to slower t_r/t_f; less suitable for resonant topologies requiring tight timing control.	Prefer IRFSL7787PBF when gate drive power budget is constrained or body diode recovery performance is critical.
IXTP75N075	R_DS(on) = 7.5 mΩ (max), V_DSS = 75 V, E_AS = 95 mJ - lower avalanche robustness and no published dV/dt rating.	Not recommended for unclamped inductive loads or high-di/dt BLDC commutation without external protection.	Select IRFSL7787PBF where system-level reliability under fault conditions (e.g., motor stall, short-circuit) is prioritized.

Compared with STP75NF75 and IXTP75N075, IRFSL7787PBF provides superior switching efficiency (lower Q_g, faster t_r/t_f), higher avalanche survivability (144 mJ vs. ≤95 mJ), and verified body diode dV/dt immunity - making it optimal for high-reliability motor drives and redundant power systems.

Availability

IRFSL7787PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFSL7787PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical manufacturing and rigorous AEC-Q101 qualification processes.

This device belongs to Infineon's StrongIRFET™ family - engineered specifically for high-current, high-ruggedness power conversion in motor control, UPS, and industrial SMPS where thermal stability and fault tolerance are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFSL7787PBF at 100°C case temperature?

The maximum continuous drain current is 54 A at T_C = 100°C and V_GS = 10 V, derated linearly from 76 A at 25°C using the 0.83 W/°C thermal derating factor. This reflects real-world thermal limits in forced-air or heatsink-mounted configurations.

Does IRFSL7787PBF require a gate resistor for safe operation?

Yes - a gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during turn-on/turn-off. The datasheet specifies R_G = 2.7 Ω for switching time measurements, but layout-dependent parasitics may necessitate adjustment to balance speed and EMI.

Can IRFSL7787PBF be used in synchronous rectification with 5 V gate drive?

No - its gate threshold voltage range is 2.1–3.7 V, but full enhancement requires ≥6 V to achieve rated R_DS(on). At 5 V, R_DS(on) rises to ~8.2 mΩ (max), increasing conduction loss by ~20%. Use 10 V drive for optimal performance in synchronous rectifier mode.

How does the body diode recovery performance compare to discrete Schottky diodes?

The body diode has Q_rr = 42 nC and t_rr = 33 ns at 25°C, which is slower than Schottky diodes but offers superior thermal robustness and integration. Its 10 V/ns dV/dt rating prevents false turn-on during fast voltage transitions - a key advantage over Schottky in high-noise inverter environments.

IRFSL7787PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 76A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 109 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL7787PBF FAQ

1.How can I place an order for IRFSL7787PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL7787PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL7787PBF reliable?

The price and inventory of IRFSL7787PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL7787PBF is usually 5 days.

3.What payment methods are accepted for IRFSL7787PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL7787PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL7787PBF?

IRFSL7787PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL7787PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL7787PBF?

For technical support, including IRFSL7787PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL7787PBF requirements.

6.How does Aetrix verify that IRFSL7787PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL7787PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL7787PBF meets industry standards.

7.What is the process for return or replacement of IRFSL7787PBF?

All IRFSL7787PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL7787PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL7787PBF part is unused and in its original packaging.

Return procedure for IRFSL7787PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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