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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU1010Z

Name: IRFU1010Z
Brand: Infineon Technologies
SKU: IRFU1010Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU1010Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU1010Z.pdf

Description:: MOSFET N-CH 55V 42A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,013

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Product details

Overview

IRFU1010Z from Infineon Technologies (formerly International Rectifier) is a 55V, 42A N-channel D-Pak power MOSFET with 7.5mΩ R_DS(on) at V_GS = 10V, rated for 175°C junction operation and featuring fast switching (t_r = 76ns, t_f = 48ns), high repetitive avalanche capability (E_AS = 91mJ), and integrated body diode optimized for hard-switched DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFU1010Z datasheet, IRFU1010Z pinout, IRFU1010Z application, or IRFU1010Z equivalent, key selection criteria include its low conduction loss at 42A, thermal robustness under pulsed load conditions, gate charge profile (Q_g = 63–95nC), and validated unclamped inductive switching performance up to T_jmax.

Technical Context

This device employs advanced HEXFET® silicon processing to minimize R_DS(on) per unit die area while maintaining ruggedness. Its gate threshold voltage (V_GS(th) = 2.0–4.0V) enables reliable enhancement-mode turn-on with standard 5V/10V logic-level drivers, and its low C_iss (2840pF) and C_rss (250pF) support high-frequency switching above 100kHz without excessive Miller-induced shoot-through risk.

The integrated body diode exhibits V_SD = 1.3V at 42A and t_rr = 24–36ns with Q_rr = 20–30nC, enabling efficient freewheeling in synchronous buck topologies. Thermal design is supported by R_θJC = 1.11°C/W and R_θJA = 40°C/W (PCB mount), allowing sustained 42A operation with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche; suitable for 24V/36V industrial bus systems with margin.
R_DS(on)	7.5mΩ max @ V_GS = 10V - Enables <1.3W conduction loss at 42A, reducing thermal stress in compact layouts.
I_D	42A @ T_C = 25°C - Continuous current rating defined at case temperature, not ambient; requires thermal interface management.
Q_g	63–95nC - Total gate charge determines driver strength requirement; 10V drive yields ~7.5× lower gate loss vs. 5V.
E_AS	91mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching transients.
T_J max	175°C - Junction temperature limit enables operation in sealed enclosures or high-ambient environments.
t_r/t_f	76ns / 48ns - Fast edge rates reduce switching losses but demand careful PCB layout to suppress EMI.

Pinout & Package

IRFU1010Z uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current source-drain paths with minimal parasitic inductance (L_D = 4.5nH, L_S = 7.5nH).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current sink terminal	Exposed copper pad soldered to PCB ground plane; carries full load current and dissipates heat directly to board.
Source	Current return path & reference node	Low-inductance connection point for sense resistor placement and gate driver return; defines local 0V reference.
Gate	Control input	High-impedance MOS control node requiring <100nC charge; sensitive to ringing-requires localized gate resistor (7.6Ω typical) and short trace routing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5mΩ at 10V drive reduces I²R losses by >30% vs. legacy 55V MOSFETs in 42A applications.
175°C junction rating	Enables derating-free operation in automotive engine compartments or industrial motor drives with ambient >105°C.
Repetitive avalanche capability	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in relay/motor coil drivers.
Fast body diode recovery	t_rr = 24–36ns and Q_rr = 20–30nC minimize reverse recovery loss and cross-conduction risk in synchronous rectification.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: Driving brushed DC motors in power tools or HVAC actuators using complementary N-channel half-bridge topology.

IC Role / Device Role / Timing Role: High-side or low-side switching element handling 42A peak current at 20–50kHz PWM frequency.

Use Value: Low R_DS(on) minimizes resistive heating during stall conditions; 175°C rating ensures reliability during intermittent overload events.

Use Scenario: Primary switch in 24V-to-5V/12V isolated or non-isolated buck converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 100–250kHz with synchronous rectification on secondary side.

Use Value: Fast t_r/t_f and low Q_g enable high efficiency (>92%) at light-to-full load; body diode Q_rr matched to controller's dead-time requirements.

Uninterruptible Power Supply (UPS) Inverter Stage

LED Driver for High-Power Architectural Lighting

Use Scenario: Output stage H-bridge in 1kVA offline UPS converting 360V DC bus to 230V AC line output.

IC Role / Device Role / Timing Role: Hard-switched bridge leg with 50Hz fundamental and 5–10kHz carrier modulation.

Use Value: Repetitive avalanche rating absorbs transformer leakage inductance spikes during zero-crossing transitions without clamping circuits.

Use Scenario: Constant-current switch in 48V-input LED driver powering 200W RGBW architectural fixtures.

IC Role / Device Role / Timing Role: PWM dimming switch controlling series-connected LED strings at 1–10kHz.

Use Value: Low V_SD (1.3V) of integrated body diode reduces forward conduction loss during off-cycle freewheeling, improving thermal margin at 100% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55M2	55V, 110A, R_DS(on) = 5.5mΩ, TO-220 package, higher current but larger footprint and slower t_f (60ns)	Requires mechanical mounting and heatsink; unsuitable for space-constrained D-Pak designs	Select when board space allows TO-220 and higher continuous current (>60A) is needed.
IXTP100N055T	55V, 100A, R_DS(on) = 5.5mΩ, TO-220AB, 175°C rating, but Q_g = 120nC (25% higher)	Higher gate drive power required; less efficient at high-frequency switching >150kHz	Prefer for thermally limited but low-frequency (<50kHz) applications where conduction loss dominates.

Compared with STP110N55M2 and IXTP100N055T, IRFU1010Z offers optimal balance of low-profile D-Pak packaging, moderate gate charge, and proven avalanche ruggedness-making it preferred for compact, medium-frequency, high-reliability industrial power stages where thermal interface to PCB is well-controlled.

Availability

IRFU1010Z is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and uninterruptible power supply applications requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFU1010Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial motor drives, renewable energy inverters, and automotive subsystems-designed for rugged operation under thermal, electrical, and mechanical stress.

FAQ

Is IRFU1010Z compatible with 5V logic-level gate drivers?

No-IRFU1010Z has a gate threshold voltage range of 2.0–4.0V but is specified for R_DS(on) and full current capability only at V_GS = 10V. At 5V, R_DS(on) rises significantly (typ. >20mΩ), increasing conduction loss and thermal stress. It requires a 10V gate drive for rated 42A operation.

What is the maximum recommended PCB copper area for thermal relief of the D-Pak drain pad?

For continuous 42A operation at T_C = 25°C, Infineon recommends ≥400 mm² of 2-oz copper connected to the drain pad via ≥6 thermal vias (0.3mm diameter, filled). This achieves the specified R_θJA = 40°C/W; smaller areas increase junction temperature and require current derating per Fig. 9.

Does IRFU1010Z support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (see Fig. 10) provides inherent current sharing when paralleled. However, matched gate drive layout (identical trace length/resistance to each gate) and symmetrical source routing are mandatory to avoid dynamic imbalance and localized thermal runaway.

Can IRFU1010Z replace IRFU1010 in existing designs?

Yes-IRFU1010Z is the lead-free (RoHS-compliant) successor to IRFU1010, with identical pinout, package, and electrical specifications. No layout or firmware changes are required; the "Z" suffix denotes Pb-free termination and updated process qualification per JEDEC J-STD-020.

IRFU1010Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU1010Z FAQ

1.How can I place an order for IRFU1010Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU1010Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU1010Z reliable?

The price and inventory of IRFU1010Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU1010Z is usually 5 days.

3.What payment methods are accepted for IRFU1010Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU1010Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU1010Z?

IRFU1010Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU1010Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU1010Z?

For technical support, including IRFU1010Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU1010Z requirements.

6.How does Aetrix verify that IRFU1010Z is sourced from the original manufacturer or authorized distributors?

All IRFU1010Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU1010Z meets industry standards.

7.What is the process for return or replacement of IRFU1010Z?

All IRFU1010Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFU1010Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU1010Z part is unused and in its original packaging.

Return procedure for IRFU1010Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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