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Infineon Technologies IRFU120Z
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- Part No.:
- IRFU120Z
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU120Z.pdf
- Description:
- MOSFET N-CH 100V 8.7A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,486
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Product details
Overview
IRFU120Z from International Rectifier is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100V VDSS, 8.7A continuous drain current at TC = 25°C, and 190mΩ RDS(on) at VGS = 10V. It features 175°C maximum junction temperature, fast switching (td(on) = 8.3ns, tr = 26ns), and rated repetitive avalanche capability-designed for DC-DC converters, motor control, and industrial power switching.
For engineers reviewing the IRFU120Z datasheet, IRFU120Z pinout, IRFU120Z application, or IRFU120Z equivalent, this page delivers verified electrical specs, thermal performance data, gate charge characteristics, body diode recovery behavior, and real-world design context for high-efficiency medium-voltage switching circuits.
Technical Context
This MOSFET employs advanced silicon processing to minimize on-resistance per unit area while maintaining robust avalanche ruggedness. Its gate threshold voltage (2.0–4.0V) enables direct drive from 3.3V/5V logic with margin, and its low Ciss (310pF) and Crss (24pF) support high-frequency operation up to several hundred kHz.
The integrated body diode exhibits VSD = 1.3V at 5.2A and trr = 24–36ns with Qrr = 23–35nC-critical for synchronous rectification and flyback snubberless designs. Thermal resistance RθJC = 4.28°C/W ensures effective heat transfer to PCB copper when mounted with proper thermal pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - supports input rails up to 80V DC with 20% safety margin in industrial SMPS |
| RDS(on) | 150–190mΩ @ VGS = 10V - determines conduction loss in 5–10A load stages |
| ID (25°C) | 8.7A continuous - defines max steady-state current with 1"² 2oz copper and 25°C case temp |
| Qg | 6.9–10nC - sets gate driver current requirement for <50ns switching transitions |
| tr/tf | 26ns/23ns - enables efficient operation at 200–500kHz PWM frequencies |
| TJ(max) | 175°C - allows derated operation in sealed enclosures or high ambient environments |
| EAS | 18mJ (tested) - supports unclamped inductive turn-off in relay drivers and solenoid controls |
Pinout & Package
IRFU120Z uses the D-Pak (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The three terminals are arranged in a single-row configuration with standard footprint per JEDEC MO-238.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to package backside; must be soldered to large copper pour for thermal management and low-inductance return path |
| Source | Reference node for gate drive and current sensing | Common return for load current and gate driver ground; critical for stable switching and accurate shunt-based sensing |
| Gate | Control terminal for channel modulation | High-impedance input requiring low-inductance routing and local 10nF bypass to suppress ringing during fast edge transitions |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 150mΩ typ. reduces conduction loss by >30% vs. legacy 100V MOSFETs in 5A buck stages |
| 175°C TJ(max) | Enables operation in automotive under-hood or industrial motor drive environments without forced air cooling |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching up to IAR = 5.2A - eliminates need for external clamping in relay/snubberless designs |
| Fast body diode | trr = 24ns, Qrr = 23nC - minimizes reverse recovery loss and EMI in synchronous rectifiers and half-bridge topologies |
| Lead-free construction | RoHS-compliant packaging meets IPC-J-STD-020 reflow profile requirements for lead-free assembly |
Applications
| Industrial Motor Control | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Driving 24V brushed DC motors in PLC I/O modules with PWM at 20kHz. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and speed via gate-driven on/off states. Use Value: Low RDS(on) limits I²R heating at 6A peak, while 175°C rating sustains operation in 70°C cabinet ambient. | Use Scenario: 48V-to-12V non-isolated buck converter delivering 5A to industrial sensors. IC Role / Device Role / Timing Role: Main switching transistor synchronized to controller IC with 300kHz fixed frequency. Use Value: Fast tr/tf and low Qg reduce switching loss; Coss = 41pF minimizes dead-time losses. |
| LED Driver for High-Bay Lighting | Solenoid/Valve Driver |
Use Scenario: Constant-current LED string driver with analog dimming in warehouse lighting fixtures. IC Role / Device Role / Timing Role: Low-side switch modulating average current through series-connected LEDs. Use Value: Body diode forward voltage (VSD = 1.3V) enables efficient freewheeling without external Schottky. | Use Scenario: 24V DC solenoid actuator control in HVAC damper systems with 100ms pulse duration. IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch absorbing stored energy via rated avalanche mode. Use Value: EAS = 18mJ tested rating permits reliable 24V/1A solenoid switching without snubber network. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK100Z | RDS(on) = 220mΩ, Qg = 12nC, TJ(max) = 150°C | Higher conduction loss and lower thermal margin; requires larger heatsink at 6A | Prefer where cost sensitivity outweighs efficiency and thermal headroom needs |
| IXTP10N100D2 | RDS(on) = 180mΩ, Qg = 15nC, avalanche-rated but no published EAS test value | Slower switching due to higher gate charge; less validated for repetitive avalanche | Choose when TO-220 through-hole mounting is required over D-Pak SMT |
Compared with STP10NK100Z and IXTP10N100D2, IRFU120Z offers superior thermal capability (175°C vs. ≤150°C), lower gate charge for faster edges, and manufacturer-verified repetitive avalanche performance-making it optimal for space-constrained, high-reliability industrial switching where thermal margin and ruggedness are critical.
Availability
IRFU120Z is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter primary switching, and solenoid/valve driver applications requiring stable component supply and long-term production continuity.
Supply support for IRFU120Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.
The HEXFET® product line was engineered specifically for high-current, medium-voltage switching applications demanding low on-resistance, fast switching, and rugged avalanche performance-targeting power supplies, motor drives, and solid-state relays.
FAQ
What is the maximum recommended gate drive voltage for IRFU120Z?
The absolute maximum VGS is ±20V, but the device is fully enhanced at VGS = 10V and characterized for reliable operation between 4.5V and 15V. Driving above 15V provides negligible RDS(on) improvement while increasing gate oxide stress risk-10V is the optimal balance of performance and reliability.
Can IRFU120Z be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (normalized to 2.5× at 150°C) enables inherent current sharing. For stable paralleling, match gate drive loop inductance, use individual gate resistors (≥5Ω), and ensure symmetrical PCB layout with shared thermal plane to maintain <5°C die-to-die temperature difference.
Does IRFU120Z require a gate resistor, and what value is typical?
Yes-a gate resistor is mandatory to dampen ringing and control dV/dt. Typical values range from 5Ω (for fastest switching with strong driver) to 47Ω (for EMI-sensitive environments). With a 1A peak gate driver, 10Ω yields ~10ns rise time and limits peak gate current to <1.5A, preventing overshoot beyond 15V.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 1.3V at 5.2A and trr = 24ns-higher forward drop than 0.5V Schottkys but significantly faster recovery than standard PN diodes. It is suitable for freewheeling in low-duty-cycle or low-frequency (<50kHz) applications but not for high-efficiency synchronous rectification where Schottky or GaN alternatives offer better VF/trr trade-offs.
IRFU120Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 310 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU120Z FAQ
1.How can I place an order for IRFU120Z through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU120Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU120Z reliable?
The price and inventory of IRFU120Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU120Z is usually 5 days.
3.What payment methods are accepted for IRFU120Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU120Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU120Z?
IRFU120Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU120Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU120Z?
For technical support, including IRFU120Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU120Z requirements.
6.How does Aetrix verify that IRFU120Z is sourced from the original manufacturer or authorized distributors?
All IRFU120Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU120Z meets industry standards.
7.What is the process for return or replacement of IRFU120Z?
All IRFU120Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFU120Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU120Z part is unused and in its original packaging.
Return procedure for IRFU120Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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