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Infineon Technologies IRFU120ZPBF
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- Part No.:
- IRFU120ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU120ZPBF.pdf
- Description:
- MOSFET N-CH 100V 8.7A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,651
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Product details
Overview
IRFU120ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100V VDSS, 8.7A continuous drain current at TC = 25°C, and 190mΩ RDS(on) at VGS = 10V. It features 175°C maximum junction temperature, fast switching (td(on) = 8.3ns, tf = 23ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor control H-bridges, and industrial power supplies.
For engineers reviewing the IRFU120ZPBF datasheet, IRFU120ZPBF pinout, IRFU120ZPBF application, or IRFU120ZPBF equivalent, key selection criteria include its low RDS(on) vs. thermal derating curve, gate charge profile (Qg = 6.9nC typ.), body diode recovery performance (trr = 24–36ns), and safe operating area under unclamped inductive switching.
Technical Context
This MOSFET employs advanced silicon processing to minimize on-resistance per unit die area while maintaining robust avalanche ruggedness. Its gate threshold voltage (VGS(th) = 2.0–4.0V) ensures reliable turn-on with standard 5V or 10V logic-level drivers, and its low Ciss (310pF typ.) supports high-frequency switching up to several hundred kHz without excessive gate drive loss.
The integrated body diode exhibits VSD = 1.3V max at IS = 5.2A and controlled reverse recovery (Qrr = 23–35nC), enabling use in synchronous rectification and freewheeling paths where diode conduction and recovery losses must be minimized. Thermal design is supported by RθJC = 4.28°C/W and RθJA = 40°C/W (PCB mount).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Maximum blocking voltage before avalanche; defines upper limit for bus voltage in buck, flyback, or half-bridge topologies. |
| RDS(on) | 190mΩ max at VGS = 10V, TJ = 25°C - Directly determines conduction loss (Pcond ≈ ID² × RDS(on)) in continuous-current applications. |
| ID (continuous) | 8.7A at TC = 25°C - Specifies maximum steady-state current when case is actively heatsinked; derates to 6.1A at TC = 100°C. |
| Qg | 6.9nC typ. - Total gate charge required to fully switch device; determines driver strength requirement and switching loss component. |
| trr | 24–36ns - Body diode reverse recovery time; critical for minimizing shoot-through risk and EMI in bridge configurations. |
| TJ(max) | 175°C - Enables operation in high-ambient environments (e.g., enclosed industrial enclosures) with appropriate thermal margin. |
| EAS | 18mJ tested - Single-pulse avalanche energy rating; allows safe operation during transient overvoltage events like inductive load switching. |
Pinout & Package
IRFU120ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.73mm × 6.22mm × 2.39mm and is lead-free (RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to low-side return path; carries full load current in low-side switch configuration. |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input controlling channel conduction; requires <20V absolute max rating and careful layout to avoid ringing. |
| Pin 3 (Drain) | Power output terminal (D) | Connects to high-voltage rail or inductive load; electrically tied to exposed copper pad for heat dissipation and low-inductance current path. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 190mΩ max at 10V drive enables <1W conduction loss at 7A, reducing heatsink requirements in space-constrained designs. |
| 175°C junction rating | Allows sustained operation at elevated ambient temperatures (e.g., 85°C enclosure) with 90°C thermal margin, improving system reliability. |
| Fast switching speed | 23ns fall time and 26ns rise time support >500kHz PWM frequencies while limiting switching loss in high-frequency SMPS. |
| Repetitive avalanche rated | Rated for repeated unclamped inductive switching events up to TJmax, eliminating need for external snubbers in solenoid or relay drive circuits. |
| Low gate charge | 6.9nC total gate charge reduces gate driver power consumption and enables use of low-cost microcontroller GPIOs with external buffer. |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Driving brushed DC motors in industrial automation systems with bidirectional control via complementary high/low-side switching. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; handles continuous 6–8A motor current with fast PWM commutation at 20–100kHz. Use Value: Low RDS(on) minimizes I²R heating during stall conditions; body diode recovery characteristics prevent cross-conduction during dead-time transitions. | Use Scenario: Output synchronous rectifier in 12V-input, 3.3V/5V-output isolated or non-isolated buck converters for telecom and computing power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; conducts during low-side conduction phase with precise timing synchronized to primary switch. Use Value: 190mΩ RDS(on) cuts conduction loss by >50% vs. 0.5V Schottky, improving efficiency from 88% to 93% at 5A load. |
| Industrial Solenoid Driver | LED Constant-Current Dimming Circuit |
Use Scenario: Driving 24V/48V solenoids and electromagnetic valves in factory control panels where inductive kick must be safely clamped. IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs stored magnetic energy via rated repetitive avalanche during turn-off. Use Value: Eliminates need for external TVS or RCD snubber networks; simplifies BOM and improves long-term reliability under frequent actuation cycles. | Use Scenario: High-side current sink for multi-string LED arrays in architectural lighting, using constant-current PWM dimming at 1–10kHz. IC Role / Device Role / Timing Role: Series-pass switch modulating average LED current; operates in linear region during analog dimming or as saturated switch during PWM. Use Value: 175°C TJ(max) withstands localized heating from LED thermal runaway events; low Qg enables clean PWM edges without current overshoot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK100Z | 100V VDSS, 12A ID, 180mΩ RDS(on), TO-220 package | Through-hole mounting; higher thermal mass but no exposed pad; lacks specified repetitive avalanche rating | Preferred for prototyping or low-volume through-hole assemblies where PCB real estate is not constrained. |
| IXTP10N100D2 | 100V VDSS, 10A ID, 220mΩ RDS(on), TO-220FP package | Shorter lead form factor; higher RDS(on); includes ultra-fast body diode (trr = 15ns) | Chosen when faster diode recovery is prioritized over conduction loss, e.g., in resonant LLC secondary switches. |
Compared with STP12NK100Z and IXTP10N100D2, IRFU120ZPBF offers superior thermal performance in surface-mount layouts due to its D-Pak thermal pad, balanced trade-off between RDS(on) and Qg, and verified repetitive avalanche capability-making it optimal for production-grade, space-limited, high-reliability power stages.
Availability
IRFU120ZPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and solenoid control applications requiring stable component supply and long-term manufacturability.
Supply support for IRFU120ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
IRFU120ZPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and commercial power systems where thermal robustness and avalanche tolerance are mandatory.
FAQ
What is the maximum gate-to-source voltage rating for IRFU120ZPBF?
The absolute maximum VGS is ±20V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10V to +15V, with typical drive at +10V for full enhancement and +0V or –5V for guaranteed turn-off. Gate resistors should be selected to limit peak current during switching transients.
Can IRFU120ZPBF be used in linear (analog) mode for constant-current regulation?
Yes-its 175°C TJ(max) and SOA curve (Fig. 8) support limited linear operation. At VDS = 10V and ID = 2A, power dissipation is 20W; with RθJC = 4.28°C/W, junction rise is ~86°C above case-feasible only with aggressive heatsinking. Not recommended for sustained >5W dissipation without thermal derating.
Does IRFU120ZPBF have a built-in ESD protection diode on the gate?
No-IRFU120ZPBF does not integrate gate ESD protection. Its gate oxide is sensitive to electrostatic discharge; handling requires Class 1B ESD precautions (≤250V). External gate protection (e.g., 12V Zener clamp between G and S) is strongly advised in automated assembly or high-noise environments.
How does the body diode performance compare to discrete Schottky diodes in flyback applications?
The body diode has VSD = 1.3V max and trr = 24–36ns-higher forward drop than 0.4V Schottky diodes but significantly lower reverse recovery charge (Qrr = 23–35nC vs. >100nC for many Schottkys). In flyback snubberless designs, it reduces EMI and eliminates diode cost, though efficiency is ~2–3% lower than optimized Schottky solutions.
IRFU120ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 310 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU120ZPBF FAQ
1.How can I place an order for IRFU120ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU120ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU120ZPBF reliable?
The price and inventory of IRFU120ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU120ZPBF is usually 5 days.
3.What payment methods are accepted for IRFU120ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU120ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU120ZPBF?
IRFU120ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU120ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU120ZPBF?
For technical support, including IRFU120ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU120ZPBF requirements.
6.How does Aetrix verify that IRFU120ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFU120ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU120ZPBF meets industry standards.
7.What is the process for return or replacement of IRFU120ZPBF?
All IRFU120ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU120ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU120ZPBF part is unused and in its original packaging.
Return procedure for IRFU120ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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