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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU12N25D

Name: IRFU12N25D
Brand: Infineon Technologies
SKU: IRFU12N25D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU12N25D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU12N25D.pdf

Description:: MOSFET N-CH 250V 14A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,875

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Product details

Overview

IRFU12N25D from Infineon Technologies (formerly International Rectifier) is a 250V, 14A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters and SMPS. It features R_DS(on) = 0.26Ω @ V_GS = 10V, Q_g = 23–35nC, and avalanche-rated E_AS = 250mJ - enabling efficient hard-switched topologies with robust unclamped inductive switching capability.

For engineers reviewing the IRFU12N25D datasheet, IRFU12N25D pinout, IRFU12N25D application, or IRFU12N25D equivalent, key selection criteria include its low gate charge for reduced switching loss, fully characterized C_oss (130pF typ.) for resonant design, and validated diode recovery dv/dt of 9.3V/ns in high-speed flyback and LLC half-bridge configurations.

Technical Context

This MOSFET employs planar vertical DMOS technology with integrated body diode, supporting continuous conduction mode (CCM) and discontinuous conduction mode (DCM) operation in isolated and non-isolated switch-mode power supplies. Its gate threshold voltage (V_GS(th) = 3.0–5.0V) ensures reliable turn-on with standard 10V gate drivers while maintaining noise immunity.

The device's thermal resistance R_θJC = 1.04°C/W enables high-power density layouts on PCBs with copper-clad heatsinking. Its avalanche ruggedness (I_AR = 8.4A, E_AS = 250mJ) supports reliable operation under transient overloads without external snubbers in offline adapters and industrial AC-DC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250V - Withstands full mains-referred DC bus voltages up to 375V_pk in universal-input 85–265VAC designs
R_DS(on) max	0.26Ω @ V_GS = 10V - Limits conduction loss to ≤2.5W at 14A DC, enabling compact thermal design
Q_g	23–35nC - Enables <100ns total switching time with 6.8Ω gate resistor, reducing switching loss in >200kHz converters
C_oss eff.	130pF @ V_DS = 0–200V - Defines zero-voltage switching (ZVS) boundary in resonant LLC and phase-shifted full-bridge topologies
E_AS	250mJ single-pulse - Sustains unclamped inductive energy from 100µH/8.4A inrush without failure in PFC boost stages
dv/dt rating	9.3V/ns - Supports stable operation in high-di/dt environments (e.g., synchronous rectification in 500kHz flyback)
T_J range	−55°C to +175°C - Qualified for under-hood automotive auxiliary supplies and industrial motor drive gate drivers

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal conduction and mechanical stability on FR-4 PCBs. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Drain (secondary tab). The dual-drain configuration lowers package inductance and improves current sharing in paralleled configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10V logic-level drive; input capacitance C_iss = 810pF requires careful gate driver sizing to avoid ringing
2 (Drain)	Main current path anode	Connected to high-side switching node; thermally coupled to PCB copper pour via exposed metal tab
3 (Source)	Reference and return path	Serves as local ground reference for gate drive; layout must minimize source inductance to prevent false turn-on
4 (Drain)	Secondary current path anode	Parallel drain connection reduces effective R_DS(on) by ~5% and improves thermal spreading across PCB

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	12–19nC / 23–35nC = 0.45–0.55 - Reduces Miller-induced shoot-through risk in half-bridge synchronous rectifiers
Fully characterized C_oss	130pF (effective), 1100pF (V_DS = 1V), 50pF (V_DS = 200V) - Enables accurate soft-switching timing prediction across full operating range
Avalanche-rated	E_AS = 250mJ, I_AR = 8.4A - Eliminates need for external clamping circuits in boost PFC and flyback snubberless designs
Fast body diode	t_rr = 140ns, Q_rr = 710nC - Minimizes reverse recovery loss in synchronous rectification and bidirectional DC-DC converters

Applications

Server VRM Power Stage

Industrial AC-DC Adapter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2V @ 100A+).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 500kHz–1MHz with tight dead-time control.

Use Value: R_DS(on) = 0.26Ω and low Q_g reduce conduction + switching losses below 3W per phase, improving VRM efficiency to >92%.

Use Scenario: Universal-input 24V/5A offline adapter for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology operating at 65–130kHz.

Use Value: Avalanche rating and 9.3V/ns dv/dt tolerance enable reliable operation during line surges and output short-circuit events without snubber.

Automotive DC-DC Converter

Telecom 48V Intermediate Bus

Use Scenario: 12V-to-5V/3.3V step-down converter for infotainment head unit power rails.

IC Role / Device Role / Timing Role: High-side switch in monolithic buck controller IC with integrated gate driver.

Use Value: −55°C to +175°C junction rating meets AEC-Q101 requirements; low C_oss enables ZVS at light loads for improved standby efficiency.

Use Scenario: 48V-to-12V intermediate bus converter in 1RU telecom shelf with forced-air cooling.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology operating at 200kHz.

Use Value: Dual-drain D-Pak package provides 1.04°C/W R_θJC, allowing 14A continuous current with <85°C case temperature under 200LFM airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK25Z	R_DS(on) = 0.22Ω, Q_g = 32nC, TO-220 package, no dual-drain	Higher thermal resistance (R_θJC = 1.5°C/W); requires heatsink in >10A applications	Preferred where through-hole mounting and higher surge current (I_DM = 56A) are prioritized over board space
IXTP12N25P	R_DS(on) = 0.27Ω, Q_g = 21nC, TO-220FP package, lower C_oss (95pF)	No avalanche rating; limited to clamped topologies only	Selected when ultra-low gate charge dominates over ruggedness, e.g., high-frequency Class-D audio amplifiers

Compared with STP14NK25Z and IXTP12N25P, the IRFU12N25D uniquely combines D-Pak surface-mount compatibility, dual-drain thermal performance, and certified avalanche energy - making it optimal for space-constrained, high-reliability SMPS where board area, thermal management, and fault tolerance are co-constrained.

Availability

IRFU12N25D is available at Aetrix Electronics and suitable for server VRM power stages, industrial AC-DC adapters, and automotive DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for IRFU12N25D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with roots in Siemens' semiconductor division.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switch-mode power conversion - targeting server, telecom, industrial, and automotive power systems demanding ruggedness, low loss, and predictable dynamic behavior.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFU12N25D supports 9.7A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be verified against actual PCB copper area and airflow conditions using the 0.96W/°C linear derating factor.

Does the body diode support synchronous rectification without external Schottky assist?

Yes - the integrated body diode has t_rr = 140ns and Q_rr = 710nC at T_J = 25°C, enabling use in synchronous rectification at frequencies up to 300kHz. However, for >95% efficiency in 12V-output flyback converters, external Schottky clamping is recommended to suppress voltage overshoot during fast di/dt transitions.

Can IRFU12N25D replace IRFR12N25D in existing designs?

Yes - both share identical electrical specifications and die, differing only in package: IRFR12N25D uses D-Pak with gull-wing leads, while IRFU12N25D uses straight-lead D-Pak (TO-252AA). Footprint compatibility requires verification of solder paste stencil aperture and reflow profile due to leadform variation, but no circuit redesign is needed.

Is gate resistive damping required for stable switching above 200kHz?

Yes - due to Q_gd = 12–19nC and C_iss = 810pF, a 6.8Ω gate resistor is recommended (per datasheet Fig. 6) to limit ringing and ensure monotonic V_GS rise/fall. Layout must include localized 100nF ceramic decoupling at the gate driver output and minimize loop inductance between gate resistor, driver, and MOSFET pins.

IRFU12N25D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU12N25D FAQ

1.How can I place an order for IRFU12N25D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU12N25D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU12N25D reliable?

The price and inventory of IRFU12N25D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU12N25D is usually 5 days.

3.What payment methods are accepted for IRFU12N25D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU12N25D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU12N25D?

IRFU12N25D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU12N25D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU12N25D?

For technical support, including IRFU12N25D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU12N25D requirements.

6.How does Aetrix verify that IRFU12N25D is sourced from the original manufacturer or authorized distributors?

All IRFU12N25D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU12N25D meets industry standards.

7.What is the process for return or replacement of IRFU12N25D?

All IRFU12N25D units undergo pre-shipment inspection (PSI). If there is an issue with IRFU12N25D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU12N25D part is unused and in its original packaging.

Return procedure for IRFU12N25D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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