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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU12N25DPBF

Name: IRFU12N25DPBF
Brand: Infineon Technologies
SKU: IRFU12N25DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU12N25DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU12N25DPBF.pdf

Description:: MOSFET N-CH 250V 14A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU12N25DPBF from Infineon Technologies (formerly International Rectifier) is a 250V, 14A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 0.26Ω R_DS(on) at V_GS = 10V and optimized for high-frequency DC-DC converters. It integrates a robust body diode with 140ns reverse recovery time and supports unclamped inductive switching up to 250mJ avalanche energy.

For engineers reviewing the IRFU12N25DPBF datasheet, IRFU12N25DPBF pinout, IRFU12N25DPBF application, or IRFU12N25DPBF equivalent, key selection criteria include its 9.3V/ns peak diode recovery dv/dt rating, 23nC typical total gate charge, 130pF C_oss at V_DS = 25V, and thermal resistance of 1.04°C/W junction-to-case - critical for SMPS thermal design and switching loss optimization.

Technical Context

This HEXFET device uses planar vertical DMOS structure with fully characterized output capacitance (C_oss = 130pF typ. at V_DS = 25V) and effective C_oss = 130pF across 0–200V, enabling accurate snubberless flyback and resonant converter modeling. Its gate threshold voltage (3.0–5.0V) and 6.8S forward transconductance ensure stable turn-on under wide V_GS margin.

The MOSFET delivers 56A pulsed drain current with linear derating (0.96W/°C), supported by 175°C max junction temperature and -55°C min storage temperature. Avalanche-rated operation (I_AR = 8.4A, E_AS = 250mJ) allows reliable operation in inductive load switching without external clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250V - maximum blocking voltage before avalanche; enables use in 200V bus systems with 25% safety margin
R_DS(on) max	0.26Ω @ V_GS = 10V, I_D = 8.4A - determines conduction loss (P_cond ≈ 2.2W at 14A DC)
I_D continuous	14A @ T_C = 25°C - usable full-current rating only with heatsink or low-thermal-resistance PCB mounting
Q_g typ.	23nC - defines gate drive power requirement; drives ~2.3µC per MHz at 1MHz switching
C_oss eff.	130pF - directly impacts hard-switching loss and ZVS transition timing in resonant topologies
t_rr	140ns - sets minimum dead-time in half-bridge configurations to avoid shoot-through during body diode commutation
R_θJC	1.04°C/W - enables direct thermal path to heatsink; 10W dissipation raises junction only ~10.4°C above case

Pinout & Package

D-Pak (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection. Standard 3-pin surface-mount outline: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10V logic-level drive; requires ≥3.0V to begin conduction, fully enhanced at ≥10V
D	Drain terminal	High-side switch node; electrically and thermally connected to exposed copper pad on package underside
S	Source reference	Return path for load current; tied to power ground in low-side configuration; forms body diode anode

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	12nC/23nC ≈ 0.52 - reduces Miller-induced switching delay and improves controllability in high-dV/dt environments
Fully characterized C_oss	130pF at V_DS = 25V, 50pF at V_DS = 200V - enables precise soft-switching timing prediction in LLC and phase-shifted full-bridge
Avalanche-rated	E_AS = 250mJ single-pulse - eliminates need for external RCD clamp in flyback or buck-derived topologies
Lead-free construction	RoHS-compliant Pb-free plating and solderable terminations - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

AC-DC Adapter

Server VRM

Use Scenario: 65W universal-input offline flyback converter with 100kHz switching frequency and active clamp reset.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 265V AC rectified input; body diode conducts during magnetizing current reset.

Use Value: 140ns t_rr and 9.3V/ns dv/dt rating prevent false triggering during diode recovery; 250V V_DSS accommodates reflected flyback spikes up to 220V.

Use Scenario: 12V-to-1.2V synchronous buck converter delivering 120A to CPU core with 500kHz switching.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; conducts high RMS current with minimal conduction loss.

Use Value: 0.26Ω R_DS(on) limits I²R loss to <1.5W at 120A peak; D-Pak thermal path supports >10W dissipation with 2oz copper and thermal vias.

Industrial Motor Drive

LED Driver

Use Scenario: 24V three-phase inverter stage driving BLDC motor with trapezoidal commutation at 20kHz PWM.

IC Role / Device Role / Timing Role: Half-bridge leg switch; subjected to inductive kickback and cross-conduction risk during dead-time.

Use Value: 56A I_DM handles motor surge currents; 250mJ E_AS absorbs inductive energy without failure during short-circuit events.

Use Scenario: Constant-current boost LED driver powering 12×1W white LEDs from 12V supply at 350mA output.

IC Role / Device Role / Timing Role: Main switching transistor operating in continuous conduction mode (CCM) with 200kHz frequency.

Use Value: 23nC Q_g enables efficient gate drive with low-power controller; 130pF C_oss minimizes capacitive switching loss at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK25ZFP	250V, 14A, R_DS(on) = 0.24Ω, TO-220FP package, no specified avalanche rating	Larger footprint, higher R_θJA (60°C/W), unsuitable for compact SMT layouts	Prefer when through-hole mounting and lower R_DS(on) outweigh thermal and space constraints
IXTP12N25P	250V, 12A, R_DS(on) = 0.28Ω, TO-220 package, E_AS = 180mJ	Lower current rating and avalanche energy; not validated for 14A continuous operation	Select only if board layout permits TO-220 and peak current remains ≤12A

Compared with STP14NK25ZFP and IXTP12N25P, IRFU12N25DPBF offers superior thermal performance (1.04°C/W vs. ≥2.5°C/W), verified avalanche ruggedness (250mJ), and SMT-compatible D-Pak footprint - making it optimal for space-constrained, high-reliability SMPS designs requiring repeatable inductive switching.

Availability

IRFU12N25DPBF is available at Aetrix Electronics and suitable for AC-DC adapters, server VRMs, industrial motor drives, and LED drivers requiring stable component supply, RoHS compliance, and long-term industrial lifecycle support.

Supply support for IRFU12N25DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive and industrial qualification standards.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies where low gate charge, controlled output capacitance, and avalanche robustness are essential.

FAQ

Is IRFU12N25DPBF suitable for 200kHz+ switching in a ZVS resonant converter?

Yes. With 23nC total gate charge, 130pF effective output capacitance, and 140ns body diode reverse recovery, it supports zero-voltage switching transitions up to 500kHz in properly designed LLC or series-resonant topologies. Its low Q_gd/Q_g ratio ensures clean turn-off even under high dv/dt conditions.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 9.7A continuous drain current at T_C = 100°C and V_GS = 10V. This reflects thermal derating due to reduced channel mobility and increased R_DS(on); operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 175°C.

Does the body diode support synchronous rectification in a buck converter?

No - the integrated body diode is not optimized for synchronous rectification. Its 1.5V forward voltage and 140ns reverse recovery cause excessive conduction and switching losses compared to discrete Schottky or dedicated sync-FETs. Use only as freewheeling diode in non-synchronous topologies.

Can IRFU12N25DPBF be used without a heatsink in a 10W dissipation scenario?

No. With R_θJC = 1.04°C/W and R_θCA ≈ 50°C/W (PCB mount), 10W dissipation would raise junction temperature by ~510°C above ambient - far exceeding 175°C limit. A heatsink or thermal pad is mandatory; for 10W, minimum R_θJA must be ≤16°C/W to keep T_J < 125°C at 25°C ambient.

IRFU12N25DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU12N25DPBF FAQ

1.How can I place an order for IRFU12N25DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU12N25DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU12N25DPBF reliable?

The price and inventory of IRFU12N25DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU12N25DPBF is usually 5 days.

3.What payment methods are accepted for IRFU12N25DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU12N25DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU12N25DPBF?

IRFU12N25DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU12N25DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU12N25DPBF?

For technical support, including IRFU12N25DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU12N25DPBF requirements.

6.How does Aetrix verify that IRFU12N25DPBF is sourced from the original manufacturer or authorized distributors?

All IRFU12N25DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU12N25DPBF meets industry standards.

7.What is the process for return or replacement of IRFU12N25DPBF?

All IRFU12N25DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU12N25DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU12N25DPBF part is unused and in its original packaging.

Return procedure for IRFU12N25DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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