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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU13N15D

Name: IRFU13N15D
Brand: Infineon Technologies
SKU: IRFU13N15D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU13N15D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU13N15D.pdf

Description:: MOSFET N-CH 150V 14A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU13N15D from Infineon Technologies is a 150 V, 14 A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It features 0.18 Ω R_DS(on) at V_GS = 10 V, 19–29 nC total gate charge, and 130 mJ single-pulse avalanche energy-enabling robust operation in active-clamp forward topologies with 48 V telecom input.

For engineers reviewing the IRFU13N15D datasheet, IRFU13N15D pinout, IRFU13N15D application, or IRFU13N15D equivalent, key selection criteria include its validated 3.8 V/ns peak diode recovery dv/dt, 110 ns reverse recovery time, and junction-to-case thermal resistance of 1.75 °C/W-critical for thermally constrained SMPS designs requiring reliable unclamped inductive switching.

Technical Context

This MOSFET employs planar silicon process technology with fully characterized output capacitance (C_oss = 130 pF at V_DS = 25 V; C_oss,eff = 110 pF), enabling accurate snubberless design in hard-switched converters. Its gate threshold voltage (3.0–5.5 V) and low Q_gd/Q_g ratio support stable PWM control under wide V_GS margin.

The integrated body diode exhibits 1.3 V forward voltage at 8.3 A and 25 °C, with 520 nC reverse recovery charge and controlled 110 ns trr-making it suitable for synchronous rectification and freewheeling paths where diode conduction and recovery losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before avalanche onset; supports 48 V input systems with ≥3× safety margin in active-clamp forward converters.
R_DS(on) max	0.18 Ω @ V_GS = 10 V, I_D = 8.3 A - Defines conduction loss at rated current; yields ≤2.2 W I²R loss at 14 A continuous.
Q_g	19–29 nC - Total gate charge determines driver power requirement and switching speed; enables <20 ns turn-on delay with 11 Ω gate resistor.
E_AS	130 mJ - Single-pulse avalanche energy rating ensures survivability during unclamped inductive turn-off events up to 8.3 A.
C_oss,eff	110 pF - Effective output capacitance over full V_DS swing (0–120 V); used directly in resonant timing and zero-voltage switching (ZVS) calculations.
R_θJC	1.75 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting for 86 W power dissipation at T_C = 25 °C.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions: 10.42 × 6.73 × 2.38 mm (L × W × H), lead-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives PWM signal; requires 10 V drive for full enhancement; gate leakage <100 nA at ±30 V.
2 - Drain	Main current output terminal	Internally connected to exposed copper pad; carries full load current and must be routed to low-inductance high-current path.
3 - Source	Reference node / return path	Serves as local ground reference for gate drive; connects to source of driver IC and power ground plane.
4 - Drain (Tab)	Thermal & electrical drain extension	Exposed metal pad on bottom side; electrically tied to Pin 2; must be soldered to large copper pour for thermal management.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	9.4–14 nC - Reduces Miller effect, enabling faster turn-off and improved noise immunity in high-dv/dt environments.
Fully characterized C_oss and C_oss,eff	130 pF (V_DS = 25 V); 110 pF (0–120 V sweep) - Enables precise soft-switching timing and ZVS design without empirical tuning.
High avalanche ruggedness	130 mJ E_AS, 8.3 A I_AR - Supports reliable operation in unclamped inductive switching without external snubbers.
Optimized body diode	t_rr = 110 ns, Q_rr = 520 nC - Minimizes reverse recovery loss in freewheeling and synchronous rectifier configurations.

Applications

Telecom 48 V Active-Clamp Forward Converter

Industrial DC-DC Isolated Buck-Boost

Use Scenario: Primary-side switch in 48 V input telecom power supply delivering 12 V/20 A output using active-clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 150 V blocking and 14 A peak current; operates at 200–500 kHz with ZVS-assisted turn-on.

Use Value: Low C_oss,eff and high E_AS enable reliable clamp capacitor reset and withstand bus transients without derating.

Use Scenario: Isolated bidirectional DC-DC converter in programmable logic controller (PLC) power stage with 24–48 V input range.

IC Role / Device Role / Timing Role: Primary-side switching element in half-bridge configuration; manages 150 V isolation barrier and 9.8 A continuous current at 100 °C case temperature.

Use Value: R_θJC = 1.75 °C/W and 86 W P_D allow direct PCB copper heatsinking without mechanical heatsink, reducing system height and cost.

Server VRM High-Frequency POL Converter

Medical Imaging Power Supply Snubberless Flyback

Use Scenario: Point-of-load (POL) converter supplying 1.2 V/60 A to FPGA core rail in datacenter server motherboard.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage; conducts 14 A continuously with low V_SD and fast t_rr.

Use Value: Body diode V_SD = 1.3 V and t_rr = 110 ns reduce conduction and recovery losses versus discrete Schottky solutions.

Use Scenario: Primary switch in 200 kHz flyback converter powering X-ray detector bias supply (±100 V, 10 mA).

IC Role / Device Role / Timing Role: Energy-transfer switch subjected to repetitive unclamped inductive stress during each switching cycle.

Use Value: Validated 8.6 mJ repetitive avalanche energy (E_AR) permits snubberless operation while maintaining >10-year reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF15	R_DS(on) = 0.22 Ω; Q_g = 22 nC; TO-220 package	Larger footprint and higher thermal resistance (R_θJC = 2.5 °C/W); no D-Pak option	Prefer when through-hole assembly or higher surge current margin is required; avoid in space-constrained SMPS.
IXTP14N15P	R_DS(on) = 0.19 Ω; E_AS = 110 mJ; TO-220FP package	Vertical mount, lower power density; lacks C_oss,eff characterization	Select for legacy board compatibility; not recommended for new high-frequency ZVS designs due to uncharacterized C_oss behavior.

Compared with STP14NF15 and IXTP14N15P, IRFU13N15D delivers superior power density via D-Pak thermal performance, tighter C_oss modeling for ZVS timing, and 18% higher avalanche energy-making it the preferred choice for next-generation compact, high-efficiency telecom and industrial DC-DC converters.

Availability

IRFU13N15D is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC converters, and medical imaging power modules requiring stable component supply across multi-year production cycles.

Supply support for IRFU13N15D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency switching power conversion, emphasizing ruggedness, low gate charge, and precise dynamic parameter characterization for hard- and soft-switching topologies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFU13N15D supports 9.8 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation without exceeding 175 °C junction temperature under typical PCB copper area conditions.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes-a 11 Ω gate resistor is used in the datasheet's switching time test circuit (Fig 10a) to control dv/dt and prevent oscillation. For 200–500 kHz SMPS use, a 10–22 Ω non-inductive resistor placed adjacent to the gate pin is recommended to dampen ringing and ensure clean turn-on/turn-off waveforms.

Can the body diode be used for synchronous rectification in a buck converter?

Yes-the body diode has characterized V_SD = 1.3 V at 8.3 A and t_rr = 110 ns, making it viable for low-duty-cycle freewheeling. However, for optimal efficiency above 5 A, external synchronous FET control is preferred due to the diode's higher conduction loss versus an actively driven low-R_DS(on) MOSFET.

Is the IRFU13N15D suitable for avalanche-rated operation in unclamped inductive loads?

Yes-it is fully characterized for unclamped inductive switching with 130 mJ single-pulse avalanche energy (E_AS) and 8.3 A avalanche current (I_AR). Application Note AN-1001 provides design guidelines for implementing robust avalanche operation without external protection components.

IRFU13N15D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU13N15D FAQ

1.How can I place an order for IRFU13N15D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU13N15D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU13N15D reliable?

The price and inventory of IRFU13N15D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU13N15D is usually 5 days.

3.What payment methods are accepted for IRFU13N15D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU13N15D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU13N15D?

IRFU13N15D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU13N15D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU13N15D?

For technical support, including IRFU13N15D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU13N15D requirements.

6.How does Aetrix verify that IRFU13N15D is sourced from the original manufacturer or authorized distributors?

All IRFU13N15D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU13N15D meets industry standards.

7.What is the process for return or replacement of IRFU13N15D?

All IRFU13N15D units undergo pre-shipment inspection (PSI). If there is an issue with IRFU13N15D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU13N15D part is unused and in its original packaging.

Return procedure for IRFU13N15D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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