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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU13N20DPBF

Name: IRFU13N20DPBF
Brand: Infineon Technologies
SKU: IRFU13N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU13N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU13N20DPBF.pdf

Description:: MOSFET N-CH 200V 13A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU13N20DPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 13 A N-channel enhancement-mode MOSFET in TO-251AA (IPAK) package, optimized for switch-mode power supply (SMPS) primary-side switching with R_DS(on) = 0.28 Ω at V_GS = 10 V and Q_g = 24 nC. It operates in hard-switched flyback and forward converters in AC-DC adapters.

For engineers reviewing the IRFU13N20DPBF datasheet, IRFU13N20DPBF pinout, IRFU13N20DPBF application, or IRFU13N20DPBF equivalent, key selection criteria include breakdown voltage margin, gate charge for PWM controller compatibility, thermal resistance in through-hole mounting, and lead-free compliance for industrial power supplies.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch to balance conduction loss and switching speed. Its 200 V V_DSS rating supports 170 VAC input designs with 20% line surge margin, and the 13 A I_D rating is specified at T_C = 25 °C with derating to 7.5 A at 100 °C case temperature.

The device features a built-in fast-recovery body diode (t_rr = 55 ns, Q_rr = 32 nC) and is characterized for gate threshold voltage (V_GS(th)) between 2.0 V and 4.0 V, enabling direct drive from standard 5 V or 3.3 V PWM controllers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Supports 170 VAC mains with 20% surge tolerance in offline SMPS
I_D @ T_C = 25 °C	13 A - Continuous drain current rating for TO-251AA package at low case temperature
R_DS(on) @ V_GS = 10 V	0.28 Ω - Conduction loss of 47 W at 13 A, dictating heatsink sizing in 65–100 kHz converters
Q_g	24 nC - Gate charge determines driver strength requirement and switching loss at 65 kHz
t_rr	55 ns - Body diode reverse recovery time impacts snubber design and EMI in discontinuous conduction mode
R_θJC	3.5 °C/W - Junction-to-case thermal resistance defines maximum power dissipation under forced-air cooling

Pinout & Package

Package: TO-251AA (IPAK), single-ended through-hole, 3-pin, lead-free (PbF) per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power terminal	Connected to primary winding of transformer; carries full switching current and withstands 200 V transients
Gate (G)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; Miller plateau at ~3.5 V
Source (S)	Power return and reference node	Common connection point for current-sense resistor and gate driver ground; referenced to primary-side ground

Key Features

Feature	Design Value
Lead-free (PbF) construction	Meets RoHS Directive 2011/65/EU; no lead in die attach, plating, or mold compound
Fast body diode	t_rr = 55 ns enables efficient DCM operation without external freewheeling diode in flyback topologies
Low gate charge	Q_g = 24 nC reduces driver IC power consumption and allows use of low-cost 5 V PWM controllers
Enhancement-mode operation	V_GS(th) = 2.0–4.0 V ensures reliable turn-off with zero gate voltage and eliminates need for negative bias

Applications

AC-DC Adapter

Industrial DC-DC Converter

Use Scenario: 36 W universal-input (90–264 VAC) adapter for networking equipment.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in quasi-resonant flyback topology operating at 65 kHz.

Use Value: 0.28 Ω R_DS(on) limits conduction loss to <1.5 W at full load; TO-251AA enables manual assembly and rework.

Use Scenario: 120 W isolated DC-DC module for PLC I/O power rails.

IC Role / Device Role / Timing Role: Main switch in forward converter with synchronous rectification on secondary side.

Use Value: 200 V V_DSS accommodates 150 VDC bus with 33% overvoltage margin; t_rr = 55 ns minimizes cross-conduction loss during dead-time.

LED Driver Power Supply

Telecom Power Shelf

Use Scenario: Constant-current LED driver for outdoor signage with wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: High-side switch in buck-boost PFC front-end stage.

Use Value: R_θJC = 3.5 °C/W enables operation at 70 °C ambient without active cooling; PbF compliance meets EU environmental mandates.

Use Scenario: 48 V input, 12 V output telecom shelf power system with hot-swap capability.

IC Role / Device Role / Timing Role: Primary switch in half-bridge configuration driving center-tapped transformer.

Use Value: Q_g = 24 nC allows precise gate timing control across multiple paralleled units; 13 A rating supports 2× redundancy design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SMPS MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK20ZFP	V_DSS = 200 V, R_DS(on) = 0.29 Ω, Q_g = 26 nC, TO-220FP package	Higher thermal resistance (R_θJC = 4.0 °C/W); requires larger heatsink in same footprint	Preferred where board space permits TO-220FP and higher peak current margin is needed
FQP13N20L	V_DSS = 200 V, R_DS(on) = 0.32 Ω, Q_g = 22 nC, TO-220 package	Non-lead-free; lacks RoHS compliance; slower t_rr (75 ns) increases EMI in DCM	Only suitable for legacy non-RoHS programs with cost-sensitive BOMs and relaxed EMI limits

Compared with STP14NK20ZFP and FQP13N20L, IRFU13N20DPBF offers superior thermal performance in compact through-hole layouts and guaranteed lead-free compliance, making it optimal for new industrial and telecom power designs requiring regulatory alignment and manual assembly support.

Availability

IRFU13N20DPBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, and LED driver power supplies requiring stable component supply and RoHS-compliant manufacturing.

Supply support for IRFU13N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its high-voltage power MOSFET portfolio for industrial and power conversion markets.

This device belongs to the StrongIRFET™ family, engineered specifically for rugged, high-efficiency switch-mode power supplies in cost-sensitive, thermally constrained applications.

FAQ

Is IRFU13N20DPBF pin-compatible with IRFU120?

Yes - both use TO-251AA (IPAK) package with identical Drain-Gate-Source pinout. However, IRFU13N20DPBF has 200 V V_DSS and 0.28 Ω R_DS(on), while IRFU120 is rated at 100 V and 0.27 Ω. Direct substitution requires verification of voltage stress margins in the target circuit.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±20 V, but the device achieves full enhancement at V_GS = 10 V. Driving above 12 V provides no significant R_DS(on) improvement and increases risk of gate oxide stress during transients.

Does IRFU13N20DPBF require a gate resistor for stability?

Yes - a 10–22 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. This prevents false triggering and reduces EMI, especially in high-frequency SMPS layouts with >5 cm gate traces.

Can this MOSFET be used in synchronous rectification?

No - IRFU13N20DPBF is designed as a primary-side switch only. Its body diode recovery characteristics and lack of bidirectional gate control make it unsuitable for secondary-side synchronous rectification; dedicated SR controllers and logic-level MOSFETs are required instead.

IRFU13N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 235mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU13N20DPBF FAQ

1.How can I place an order for IRFU13N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU13N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU13N20DPBF reliable?

The price and inventory of IRFU13N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU13N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFU13N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU13N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU13N20DPBF?

IRFU13N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU13N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU13N20DPBF?

For technical support, including IRFU13N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU13N20DPBF requirements.

6.How does Aetrix verify that IRFU13N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFU13N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU13N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFU13N20DPBF?

All IRFU13N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU13N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU13N20DPBF part is unused and in its original packaging.

Return procedure for IRFU13N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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