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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU18N15D

Name: IRFU18N15D
Brand: Infineon Technologies
SKU: IRFU18N15D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU18N15D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU18N15D.pdf

Description:: MOSFET N-CH 150V 18A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU18N15D from Infineon Technologies (formerly International Rectifier) is a 150V, 18A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters including active-clamp forward and telecom 48V input topologies. It features 0.125Ω R_DS(on) at V_GS = 10V, 28nC typical total gate charge, and 95pF effective output capacitance (C_oss,eff) for low switching loss.

For engineers reviewing the IRFU18N15D datasheet, IRFU18N15D pinout, IRFU18N15D application, or IRFU18N15D equivalent, key selection criteria include avalanche ruggedness (200mJ single-pulse E_AS), diode reverse recovery performance (130–190ns t_rr, 660–980nC Q_rr), and thermal resistance (R_θJC = 1.4°C/W) for high-power SMPS design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized dynamic parameters-including C_iss, C_oss, and C_rss across 1V–120V V_DS-to enable accurate snubberless flyback and active-clamp forward modeling. Its gate threshold voltage (3.0–5.5V) and low Miller charge (14nC typ.) support clean turn-off in hard-switched topologies.

The device integrates a robust body diode with 1.3V forward drop at 11A and specified dv/dt immunity (3.3V/ns peak), enabling reliable synchronous rectification and freewheeling in isolated DC-DC stages without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Withstands full 48V telecom bus transients plus 200% margin in active-clamp reset circuits.
R_DS(on) max	0.125Ω @ V_GS = 10V, I_D = 11A - Enables ≤2.5W conduction loss at 18A continuous drain current.
Q_g typ.	28nC - Reduces gate drive power requirement and enables <100ns switching transitions with 6.8Ω gate resistor.
C_oss,eff	95pF - Low effective output capacitance minimizes energy loss during zero-voltage switching transitions.
E_AS	200mJ - Supports unclamped inductive switching in fault-tolerant telecom power supplies without failure.
t_r/t_f	25ns/9.8ns - Fast edge rates reduce overlap loss in half-bridge and LLC resonant converters.
R_θJC	1.4°C/W - Allows 78W dissipation at 175°C junction temperature with 25°C case sink, supporting compact heatsinking.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with drain connected to tab (pins 2 and 4 electrically tied).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10V logic-level drive; 5.5V max V_GS(th) ensures robust turn-on margin in noisy telecom environments.
2 & 4 (Drain)	High-side power node	Electrically common; connects directly to PCB copper pour for low-inductance, high-current return path in primary-side switching.
3 (Source)	Reference node / current sense point	Serves as local ground reference for gate driver ICs and provides Kelvin connection for accurate current monitoring.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.50 (14nC/28nC) - Minimizes Miller-induced shoot-through risk in bridge configurations.
Fully characterized C_oss vs. V_DS	88pF @ 120V, 1160pF @ 1V - Enables precise soft-switching timing calculation in ZVS/ZCS topologies.
Avalanche-rated	11A I_AR, 200mJ E_AS - Eliminates need for external clamping in inductive load switching applications.
Body diode t_rr & Q_rr	130–190ns / 660–980nC - Predictable reverse recovery supports synchronous rectification in secondary-side designs.
Thermal robustness	R_θJA = 50°C/W (PCB mount) - Achieves stable operation at 13A continuous current on 1-in² 2-oz copper.

Applications

Telecom 48V DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: Primary-side switch in 48V-input, 12V-output telecom power modules operating at 200–500kHz.

IC Role / Device Role / Timing Role: High-side switching element handling 18A peak current with active-clamp reset to recycle leakage energy.

Use Value: 0.125Ω R_DS(on) and 28nC Q_g reduce total losses below 3.2W at full load, enabling >94% efficiency.

Use Scenario: Clamp switch in isolated forward converter with auxiliary winding-based reset, used in industrial PLC power supplies.

IC Role / Device Role / Timing Role: Synchronized clamp FET conducting during main switch off-time to recover transformer leakage energy.

Use Value: 200mJ E_AS rating withstands repeated unclamped inductive spikes during startup and overload conditions.

Server VRM High-Frequency Buck Stages

Industrial Motor Drive Half-Bridge Legs

Use Scenario: High-side FET in multiphase buck converters supplying CPU core voltage (0.8–1.2V) at up to 100A per phase.

IC Role / Device Role / Timing Role: Fast-switching power stage element requiring low Q_gd to prevent cross-conduction in 1MHz+ operation.

Use Value: 14nC Q_gd and 9.8ns fall time ensure clean dead-time control and minimize shoot-through risk.

Use Scenario: Low-side switch in 24–48V BLDC motor inverters for HVAC blowers and pump drives.

IC Role / Device Role / Timing Role: PWM-controlled power switch managing 15A continuous motor phase current with integrated body diode commutation.

Use Value: 1.3V V_SD at 11A and 130ns t_rr reduce freewheeling loss by 35% versus standard discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF15	R_DS(on) = 0.14Ω, Q_g = 32nC, C_oss,eff = 110pF	Higher conduction and switching loss; lower avalanche rating (120mJ)	Acceptable where cost sensitivity outweighs 5% efficiency penalty and fault margin is managed externally.
IXTP18N15P	R_DS(on) = 0.13Ω, Q_g = 25nC, no published C_oss,eff or E_AS	Lower gate charge improves switching speed but lacks documented avalanche capability and C_oss characterization.	Preferred for non-fault-critical, high-speed resonant converters where body diode recovery is not stressed.

Compared with STP18NF15 and IXTP18N15P, IRFU18N15D delivers superior balance of low R_DS(on), tightly specified C_oss,eff, and guaranteed 200mJ avalanche energy-making it the most robust choice for telecom and industrial SMPS where reliability under transient stress is mandatory.

Availability

IRFU18N15D is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC converters, and server VRMs requiring stable component supply and long-term lifecycle support.

Supply support for IRFU18N15D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switched-mode power conversion-targeting telecom infrastructure, server power, and industrial motor control where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFU18N15D supports 13A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within its 1.4°C/W junction-to-case thermal resistance.

Does the body diode support synchronous rectification in secondary-side applications?

Yes-the body diode is fully characterized with 1.3V forward voltage at 11A and 130–190ns reverse recovery time. While not optimized for ultra-low V_F like dedicated Schottky diodes, its predictable t_rr and Q_rr allow controlled synchronous rectification in medium-frequency forward and flyback converters.

Can IRFU18N15D be driven directly by a 3.3V microcontroller GPIO?

No-its gate threshold voltage range is 3.0–5.5V, and full enhancement requires ≥10V V_GS to achieve rated 0.125Ω R_DS(on). A 3.3V signal yields only partial turn-on and excessive conduction loss; a gate driver IC or level-shifting circuit is required for reliable operation.

Is the drain tab electrically isolated from the PCB mounting plane?

No-the drain (pins 2 and 4) is internally connected to the exposed metal tab, which must be soldered to a PCB copper pour serving as both thermal sink and high-current return path. Electrical isolation requires insulating thermal pads or standoff hardware if the drain potential differs from the system ground plane.

IRFU18N15D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU18N15D FAQ

1.How can I place an order for IRFU18N15D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU18N15D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU18N15D reliable?

The price and inventory of IRFU18N15D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU18N15D is usually 5 days.

3.What payment methods are accepted for IRFU18N15D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU18N15D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU18N15D?

IRFU18N15D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU18N15D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU18N15D?

For technical support, including IRFU18N15D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU18N15D requirements.

6.How does Aetrix verify that IRFU18N15D is sourced from the original manufacturer or authorized distributors?

All IRFU18N15D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU18N15D meets industry standards.

7.What is the process for return or replacement of IRFU18N15D?

All IRFU18N15D units undergo pre-shipment inspection (PSI). If there is an issue with IRFU18N15D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU18N15D part is unused and in its original packaging.

Return procedure for IRFU18N15D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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