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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU220N

Name: IRFU220N
Brand: Infineon Technologies
SKU: IRFU220N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU220N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU220N.pdf

Description:: MOSFET N-CH 200V 5A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,985

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Product details

Overview

IRFU220N from Infineon Technologies (formerly International Rectifier) is a 200V, 5.0A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It features 600 mΩ R_DS(on) at V_GS = 10 V, 15 nC typical total gate charge, and 46 mJ single-pulse avalanche energy - enabling robust operation in telecom 48V forward converters.

For engineers reviewing the IRFU220N datasheet, IRFU220N pinout, IRFU220N application, or IRFU220N equivalent, key selection criteria include its low Q_gd/Q_g ratio (≈41%), fully characterized C_oss,eff = 46 pF, body diode t_rr = 90–140 ns, and thermal resistance R_θJC = 3.5 °C/W - all critical for hard-switched SMPS design stability and efficiency.

Technical Context

This HEXFET® device employs planar vertical DMOS structure with integrated body diode, supporting unclamped inductive switching up to 2.9A avalanche current. Its gate threshold voltage (2.0–4.0 V) and transconductance (2.6 S) enable reliable drive from standard 10 V logic-level sources without level-shifting.

The MOSFET's capacitance profile - C_iss = 300 pF, C_oss = 53 pF (at V_DS = 25 V), C_rss = 15 pF - is fully characterized across operating voltage range, allowing accurate prediction of switching loss and EMI behavior in forward and flyback topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 48 V input-derived transient spikes up to 160 V in telecom forward converters without breakdown.
R_DS(on) max	600 mΩ @ V_GS = 10 V, I_D = 2.9 A - Limits conduction loss to ≤870 mW at 5 A DC, suitable for thermally constrained PCB-mount designs.
Q_g typ	15 nC - Enables <100 ns turn-on with 150 mA gate driver, reducing switching loss in 300–500 kHz SMPS stages.
E_AS	46 mJ - Sustains single-pulse inductive energy during startup or overload without failure, eliminating need for external snubbers in many cases.
t_r/t_f	11 ns / 12 ns @ I_D = 2.9 A, R_G = 24 Ω - Supports clean edge control and minimal overlap loss in hard-switched topologies.
R_θJC	3.5 °C/W - Allows 43 W continuous dissipation with modest heatsinking, matching D-Pak thermal capability in compact power modules.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Gate, Drain, Source) plus auxiliary Drain tab (Pin 4) tied internally to Pin 2.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance MOSFET control terminal; requires ≤±20 V drive and low-inductance routing to minimize ringing.
2 & 4	Drain	Common high-side switch node; Pins 2 and 4 are electrically connected and serve as primary heat path to PCB copper pour.
3	Source	Power return reference for gate drive and load current; must be low-inductance tie to ground plane for stable switching.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	41% (6.1/15 nC) - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments.
Fully characterized C_oss,eff	46 pF over 0–160 V - Enables accurate calculation of turn-off loss and resonant timing in ZVS-capable circuits.
Body diode t_rr	90–140 ns @ I_F = 2.9 A, di/dt = 100 A/µs - Minimizes reverse recovery charge (Q_rr = 320–480 nC) and associated shoot-through risk.
Avalanche-rated	2.9 A I_AR, 4.3 mJ E_AR - Permits repetitive inductive switching stress without derating, simplifying protection circuitry.

Applications

Telecom Forward Converters

Industrial DC-DC Modules

Use Scenario: 48 V input, 5–12 V output forward converter in base station power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300–400 kHz with fixed duty cycle.

Use Value: 600 mΩ R_DS(on) and 15 nC Q_g jointly enable >92% efficiency at 5 A load while maintaining thermal margin on 2-layer PCB.

Use Scenario: Isolated 24 V to 5 V/3.3 V DC-DC module for PLC I/O cards.

IC Role / Device Role / Timing Role: Low-side active clamp switch in active-clamp forward topology.

Use Value: 46 mJ E_AS and 200 V V_DSS absorb clamp energy reliably across temperature, eliminating need for external TVS.

LED Driver Power Stages

Automotive Body Control Units

Use Scenario: Constant-current LED driver for commercial lighting with 24–48 V bus.

IC Role / Device Role / Timing Role: High-side PWM switch controlling buck inductor current.

Use Value: Fast 11 ns rise time and low C_iss reduce switching loss at 200–500 kHz, improving thermal performance in enclosed fixtures.

Use Scenario: 12 V input DC-DC stage powering MCU and CAN transceivers in BCM.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback supply.

Use Value: Body diode t_rr ≤140 ns prevents cross-conduction with primary-side switch, ensuring stable 150 kHz operation under cold-crank conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, R_DS(on) = 100 mΩ, Q_g = 35 nC - higher current rating but larger die and slower switching.	Better suited for lower-frequency (<100 kHz), higher-current motor drives; less optimal for high-frequency SMPS due to higher Q_g.	Select when board space allows TO-220 and peak current exceeds 5 A; avoid if gate drive strength is limited or frequency >250 kHz.
IXTP20N20P	200 V, 20 A, R_DS(on) = 120 mΩ, Q_g = 22 nC - enhanced avalanche ruggedness (E_AS = 120 mJ) but higher conduction loss.	Preferred for automotive engine bay applications requiring extended avalanche endurance; over-specified for telecom SMPS.	Choose only where AEC-Q101 qualification and >100 mJ E_AS are mandatory; otherwise, IRFU220N offers better cost/performance balance.

Compared with STP20NM20 and IXTP20N20P, the IRFU220N delivers optimal trade-off between switching speed (low Q_g, fast t_r/t_f) and thermal manageability (R_θJC = 3.5 °C/W) in space-constrained, high-frequency DC-DC converters - making it more suitable than higher-current alternatives for 5 A, 300+ kHz designs.

Availability

IRFU220N is available at Aetrix Electronics and suitable for telecom forward converters, industrial DC-DC modules, and LED driver power stages requiring stable component supply and long-term manufacturability.

Supply support for IRFU220N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation dating to the HEXFET® architecture.

The IRFU/U220N series belongs to Infineon's legacy HEXFET® discrete power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in telecom and industrial infrastructure.

FAQ

Is IRFU220N suitable for logic-level gate drive?

No - IRFU220N is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires 10 V gate drive to achieve rated R_DS(on) of 600 mΩ. Driving it with 3.3 V or 5 V will result in significantly higher on-resistance (>2 Ω) and excessive conduction loss. A dedicated gate driver or level shifter is required for full performance.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, the D-Pak drain pad (Pins 2 and 4) should connect to ≥4 cm² of 2-oz copper on the component layer, with ≥6 thermal vias (0.3 mm diameter) to an internal ground plane. This achieves near-datasheet R_θJA of 50 °C/W; smaller areas increase junction temperature by ~15–25 °C at full 43 W dissipation.

Does IRFU220N have built-in ESD protection?

No - IRFU220N lacks on-chip ESD protection diodes. Its gate oxide is susceptible to damage from static discharge exceeding ±20 V. Handling requires strict adherence to J-STD-020 guidelines: grounded wrist straps, conductive foam storage, and ionized air workstations. Gate terminals must never be left floating during assembly or testing.

Can IRFU220N replace IRFR220N in existing designs?

Yes - IRFU220N and IRFR220N share identical electrical specifications, thermal characteristics, and pinout (D-Pak vs. I-Pak). The only difference is package: IRFU220N uses D-Pak (TO-252AA) for surface-mount assembly, while IRFR220N uses I-Pak (TO-251AA) for through-hole mounting. Footprint redesign is required, but no schematic or layout changes are needed for functionally equivalent operation.

IRFU220N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU220N FAQ

1.How can I place an order for IRFU220N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU220N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU220N reliable?

The price and inventory of IRFU220N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU220N is usually 5 days.

3.What payment methods are accepted for IRFU220N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU220N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU220N?

IRFU220N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU220N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU220N?

For technical support, including IRFU220N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU220N requirements.

6.How does Aetrix verify that IRFU220N is sourced from the original manufacturer or authorized distributors?

All IRFU220N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU220N meets industry standards.

7.What is the process for return or replacement of IRFU220N?

All IRFU220N units undergo pre-shipment inspection (PSI). If there is an issue with IRFU220N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU220N part is unused and in its original packaging.

Return procedure for IRFU220N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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