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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU2905ZPBF

Name: IRFU2905ZPBF
Brand: Infineon Technologies
SKU: IRFU2905ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU2905ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU2905ZPBF.pdf

Description:: MOSFET N-CH 55V 42A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU2905ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 42 A continuous drain current at T_C = 25°C, and 14.5 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_r = 66 ns, t_f = 35 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IRFU2905ZPBF datasheet, IRFU2905ZPBF pinout, IRFU2905ZPBF application, or IRFU2905ZPBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust body diode (V_SD = 1.3 V, Q_rr = 16–24 nC), thermal performance (R_θJC = 1.38 °C/W), and avalanche-rated operation up to T_jmax.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining ruggedness under transient stress. Its gate charge profile (Q_g = 29–44 nC, Q_gd = 12 nC) supports efficient hard-switching in synchronous buck topologies with 12–28 V input rails.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 16–24 nC) and fast trr (23–35 ns), enabling reliable freewheeling in high-frequency PWM circuits without external Schottky supplementation. Thermal design is anchored by a low R_θJC of 1.38 °C/W and validated safe operating area up to 100 µs pulse width at 36 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V nominal bus systems with margin.
R_DS(on) @ V_GS = 10 V	14.5 mΩ max - Enables ≤ 25 W conduction loss at 42 A, critical for thermally constrained PCB-mount designs.
I_D @ T_C = 25°C	42 A - Continuous current rating with heatsink; derates to 24 A at T_C = 100°C per linear derating factor.
Q_g / Q_gd	29–44 nC / 12 nC - Low Miller charge reduces switching losses and improves gate drive efficiency in 100–500 kHz converters.
T_jmax	175°C - Allows operation in sealed enclosures or high ambient environments without forced air cooling.
E_AS (tested)	59 mJ - Validated single-pulse unclamped inductive avalanche energy; supports robust fault handling in motor drives.
V_GS(th)	2.0–4.0 V - Gate threshold compatible with 3.3 V and 5 V logic-level drivers when used with sufficient V_GS margin.

Pinout & Package

IRFU2905ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package provides low-profile mounting and optimized thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current in low-side configuration.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <15 Ω series resistance to damp ringing during fast switching.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; electrically and thermally connected to drain; must be soldered to large PCB copper pour.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	14.5 mΩ at 10 V gate drive enables <1 W conduction loss at 12 A, reducing heatsink requirements in compact 48 V systems.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching events up to T_jmax, eliminating need for external snubbers in relay or solenoid drive.
Fast body diode	Q_rr = 16–24 nC and t_rr = 23–35 ns support clean commutation in synchronous rectification without shoot-through risk.
175°C junction rating	Enables operation in sealed industrial enclosures or automotive under-hood zones where ambient exceeds 105°C.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V for PLC I/O modules and sensor hubs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with 10 V gate drive.

Use Value: 14.5 mΩ R_DS(on) limits conduction loss to 7.3 W at 42 A peak, enabling passive cooling on 2 oz copper PCB.

Use Scenario: H-bridge driver for 24 V, 15 A brushed motors in automated gate actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse recovery current during PWM dead time.

Use Value: Q_rr = 16–24 nC and t_rr = 23–35 ns minimize voltage spikes and EMI during commutation at 20 kHz PWM.

Industrial Power Supply

Solenoid/Relay Driver

Use Scenario: Primary-side switch in 300 W AC-DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in totem-pole PFC bridge leg, driven by dedicated gate driver IC.

Use Value: Q_gd = 12 nC and low C_iss/C_oss ratio improve zero-voltage switching (ZVS) margin and reduce driver power consumption.

Use Scenario: Inductive load switch for 24 V solenoids in factory automation valves and pneumatic controls.

IC Role / Device Role / Timing Role: Unclamped inductive turn-off switch with built-in avalanche energy absorption (E_AS = 59 mJ).

Use Value: Eliminates need for external TVS or RC snubber, reducing BOM count and board space in DIN-rail mounted controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	R_DS(on) = 22 mΩ @ 10 V; V_DSS = 100 V; TO-220 package; higher R_DS(on), larger footprint, no avalanche rating.	Higher voltage margin but lower efficiency at 48 V; unsuitable for compact SMT layouts requiring thermal pad attachment.	Select only if 100 V blocking is mandatory and board space allows through-hole mounting.
IRLZ44NPBF	R_DS(on) = 25 mΩ @ 5 V; V_DSS = 55 V; logic-level gate; D-Pak; no specified avalanche rating.	Better 3.3 V/5 V drive compatibility but higher conduction loss; not validated for repetitive avalanche stress.	Prefer for low-voltage gate drive simplicity where avalanche robustness is not required.

Compared with STP40NF10L and IRLZ44NPBF, IRFU2905ZPBF delivers superior thermal efficiency (14.5 mΩ vs ≥22 mΩ), validated avalanche ruggedness, and optimized SMT thermal interface-making it the preferred choice for high-reliability 48 V industrial switching where size, loss, and fault tolerance are jointly constrained.

Availability

IRFU2905ZPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and solenoid drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRFU2905ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions, with deep heritage in power MOSFET innovation via its acquisition of International Rectifier.

The HEXFET® product line was engineered for high-efficiency, high-reliability power conversion in industrial, automotive, and computing applications-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFU2905ZPBF RoHS-compliant and lead-free?

Yes. IRFU2905ZPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with Pb-free plating on terminals and halogen-free molding compound. The "Z" suffix in the part number explicitly denotes lead-free packaging, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

What is the recommended gate resistor value for 250 kHz switching?

A 10 Ω to 15 Ω non-inductive gate resistor is recommended to balance switching speed and gate ringing suppression. At 250 kHz with 42 A load, this value limits dV/dt to ~5 V/ns while keeping gate drive power below 150 mW using a 12 V driver, based on Q_g = 29–44 nC and measured gate loop inductance.

Can IRFU2905ZPBF be used in parallel configurations?

Yes, but with strict layout symmetry and individual gate resistors. Its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing; however, mismatched trace inductance or thermal coupling can cause imbalance. Derate total current by 15% versus single-device rating for two parallel units.

Does the body diode support continuous bidirectional current in half-bridge operation?

No-the body diode is rated for pulsed source current (I_SM = 240 A) and continuous source current (I_S = 36 A), but its forward voltage (V_SD = 1.3 V) and reverse recovery characteristics (Q_rr = 16–24 nC) are optimized for freewheeling, not bidirectional conduction. For true bidirectional switching, use external anti-parallel SiC Schottky diodes.

IRFU2905ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU2905ZPBF FAQ

1.How can I place an order for IRFU2905ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU2905ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU2905ZPBF reliable?

The price and inventory of IRFU2905ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU2905ZPBF is usually 5 days.

3.What payment methods are accepted for IRFU2905ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU2905ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU2905ZPBF?

IRFU2905ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU2905ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU2905ZPBF?

For technical support, including IRFU2905ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU2905ZPBF requirements.

6.How does Aetrix verify that IRFU2905ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFU2905ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU2905ZPBF meets industry standards.

7.What is the process for return or replacement of IRFU2905ZPBF?

All IRFU2905ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU2905ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU2905ZPBF part is unused and in its original packaging.

Return procedure for IRFU2905ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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