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Infineon Technologies IRFU3303
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- Part No.:
- IRFU3303
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU3303.pdf
- Description:
- MOSFET N-CH 30V 33A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,455
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Product details
Overview
IRFU3303 from Infineon (formerly International Rectifier) is a 30V N-channel enhancement-mode power MOSFET in TO-252AA (D-Pak) package, designed for through-hole mounting. It delivers 33A continuous drain current at 25°C, 0.031Ω RDS(on) at VGS = 10V, and is fully avalanche-rated with 95mJ single-pulse energy - used in DC-DC converters, motor drives, and load switching where ruggedness and low conduction loss are critical.
For engineers reviewing the IRFU3303 datasheet, IRFU3303 pinout, IRFU3303 application, or IRFU3303 equivalent, key selection criteria include its 30V VDS, 33A ID rating at TC = 25°C, 2.2°C/W junction-to-case thermal resistance, fast 11ns turn-on delay, and body diode recovery dv/dt capability of 5.0V/ns - all confirmed in the official Fifth Generation HEXFET® specification.
Technical Context
The IRFU3303 employs advanced planar silicon processing to achieve ultra-low on-resistance per die area while maintaining high avalanche robustness. Its gate threshold voltage (2.0–4.0V) and 29nC total gate charge support efficient drive with standard 10V logic-level gate drivers.
Thermal design relies on direct case-to-heatsink conduction via the exposed drain pad (Pin 2 & 4), enabling 57W power dissipation at TC = 25°C. The integrated body diode exhibits 1.3V forward drop at 18A and 53–80ns reverse recovery time, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage before avalanche; sets upper limit for input/output rail voltage in buck, boost, and H-bridge stages. |
| RDS(on) | 0.031Ω @ VGS = 10V, ID = 18A - Directly determines conduction loss (PCOND = I² × R); enables <1W loss at 18A. |
| ID (continuous) | 33A @ TC = 25°C - Sustained current capability when mounted on heatsink; derates to 21A at 100°C case temperature. |
| EAS | 95mJ - Single-pulse avalanche energy rating; allows safe operation under inductive switching stress without external snubbers. |
| Qg | 29nC - Total gate charge required for full turn-on; defines driver strength requirement and switching loss trade-off. |
| dv/dt (diode) | 5.0V/ns - Peak diode recovery dv/dt rating; constrains maximum allowable voltage slew during commutation to prevent false turn-on. |
| RθJC | 2.2°C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when case temperature is measured directly. |
Pinout & Package
IRFU3303 uses the TO-252AA (D-Pak) package with three leads and an exposed drain pad connected to Pins 2 and 4. The package supports through-hole mounting and provides low thermal impedance to PCB copper or external heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires ≥10V drive for full enhancement; gate leakage ≤ ±100nA at ±20V. |
| 2 | Drain | Main high-side current path; electrically tied to exposed metal pad for thermal and electrical conduction. |
| 3 | Source | Reference node for gate drive and current sensing; connects to power ground or low-side switch node. |
| 4 | Drain | Second drain connection; paralleled with Pin 2 to reduce package inductance and improve current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.031Ω enables <1W conduction loss at 18A - reduces heatsink size and improves efficiency in 12V/24V systems. |
| Fully avalanche-rated | 95mJ EAS and 18A IAR allow reliable operation under unclamped inductive switching without external protection. |
| Fast switching | 11ns td(on), 99ns tr, 16ns td(off), 28ns tf support >100kHz PWM frequencies with minimized switching loss. |
| Optimized body diode | 1.3V VSD at 18A and 53ns trr enable use as freewheeling element in non-synchronous converters. |
| TO-252AA mechanical robustness | Through-hole lead form with dual drain pins ensures mechanical stability and repeatable solder joint integrity in industrial assemblies. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12V-to-5V/3.3V step-down converter in telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier or high-side main switch operating at 200kHz PWM. Use Value: 0.031Ω RDS(on) cuts conduction loss by >40% vs. legacy 50mΩ MOSFETs, improving full-load efficiency from 89% to 92%. | Use Scenario: H-bridge driver for 24V brushed motors in industrial actuators. IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional 20A peak loads with PWM control. Use Value: 95mJ avalanche rating absorbs inductive kickback during rapid direction reversal, eliminating need for external TVS clamps. |
| Load Switch for Industrial PLC | Hot-Swap Controller Front-End |
Use Scenario: 30A programmable output stage in modular I/O modules. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays; controlled via microcontroller GPIO. Use Value: 33A continuous rating and 2.2°C/W RθJC allow direct heatsink mounting for zero-fan operation in sealed enclosures. | Use Scenario: Inrush current limiter and fault protection in 24V backplane slots. IC Role / Device Role / Timing Role: Primary pass device with external current-sense and gate control loop. Use Value: Fast 28ns fall time and 5.0V/ns diode dv/dt rating ensure clean turn-off during overcurrent shutdown without oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF3L | 30V, 36A, RDS(on) = 0.028Ω, TO-220 package, no dual-drain configuration | Requires larger footprint and higher-profile heatsinking; lacks IRFU3303's through-hole D-Pak mechanical stability | Preferred when higher current margin is needed and board space allows TO-220 mounting. |
| IXTP30N30P | 300V, 30A, RDS(on) = 0.055Ω, TO-220, higher VDS and RDS(on) | Over-specified voltage rating increases cost and gate charge; unsuitable for 12V/24V systems requiring minimal RDS(on) | Select only if system requires 300V blocking; otherwise, IRFU3303 offers superior efficiency at 30V. |
Compared with STP36NF3L and IXTP30N30P, the IRFU3303 uniquely balances ultra-low on-resistance, through-hole D-Pak reliability, and verified 95mJ avalanche performance - making it optimal for space-constrained, high-reliability 30V industrial power stages where thermal management and mechanical robustness are co-critical.
Availability
IRFU3303 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, industrial load switches, and hot-swap controllers requiring stable component supply across extended production lifecycles.
Supply support for IRFU3303 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in power MOSFET innovation dating to International Rectifier's HEXFET® technology.
The IRFU3303 belongs to the Fifth Generation HEXFET® Power MOSFET product line, engineered specifically for high-current, medium-voltage industrial and embedded power conversion where ruggedness, thermal efficiency, and long-term reliability are mandatory.
FAQ
Is IRFU3303 logic-level compatible?
No - IRFU3303 has a gate threshold voltage range of 2.0–4.0V but is specified for full enhancement at VGS = 10V. Its RDS(on) = 0.031Ω is guaranteed only at 10V drive; at 5V, RDS(on) rises significantly (>0.08Ω). It is not a true logic-level MOSFET and requires a dedicated gate driver or level-shifting circuit when driven from 3.3V/5V microcontrollers.
What is the maximum recommended PCB copper area for IRFU3303 thermal performance?
Per Application Note AN-994, a 1-inch square (25.4mm × 25.4mm) FR-4 PCB copper pour with 2oz copper thickness achieves RθJA = 50°C/W. For improved cooling, multiple internal layers connected via thermal vias under the drain pad reduce RθJA to ~35°C/W. The exposed drain pad must be soldered directly to this copper area for effective heat transfer.
Can IRFU3303 replace IRFZ34N in existing designs?
Yes, with caveats: both are 30V N-channel TO-220 MOSFETs, but IRFU3303 is TO-252AA (D-Pak), requiring footprint redesign. Electrically, IRFU3303 offers lower RDS(on) (0.031Ω vs. 0.028Ω nominal for IRFZ34N), higher ID (33A vs. 28A), and superior avalanche rating (95mJ vs. 65mJ). Thermal interface differs - verify heatsink attachment compatibility with D-Pak's flat drain pad.
Does IRFU3303 have built-in ESD protection?
No - the IRFU3303 does not integrate gate oxide ESD protection diodes. Its absolute maximum gate-to-source voltage is ±20V, and gate leakage is specified at ±100nA. External 10–100Ω gate series resistors and transient voltage suppressors are recommended in automated assembly and field-replaceable modules to prevent electrostatic damage during handling or system operation.
IRFU3303 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU3303 FAQ
1.How can I place an order for IRFU3303 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU3303 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU3303 reliable?
The price and inventory of IRFU3303 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3303 is usually 5 days.
3.What payment methods are accepted for IRFU3303?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3303 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU3303?
IRFU3303 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU3303 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU3303?
For technical support, including IRFU3303 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3303 requirements.
6.How does Aetrix verify that IRFU3303 is sourced from the original manufacturer or authorized distributors?
All IRFU3303 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3303 meets industry standards.
7.What is the process for return or replacement of IRFU3303?
All IRFU3303 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3303, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU3303 part is unused and in its original packaging.
Return procedure for IRFU3303:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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