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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3303PBF

Name: IRFU3303PBF
Brand: Infineon Technologies
SKU: IRFU3303PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU3303PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3303PBF.pdf

Description:: MOSFET N-CH 30V 33A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,880

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Product details

Overview

IRFU3303PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 49 A N-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, featuring 3.3 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and logic-level gate drive compatibility. It serves as a high-efficiency power switch in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRFU3303PBF datasheet, IRFU3303PBF pinout, IRFU3303PBF application, or IRFU3303PBF equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive, 100% UIS-tested ruggedness, thermal performance in surface-mount layouts, and compatibility with standard PCB reflow profiles for automated assembly.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, enabling reliable turn-on with 3.3 V or 5 V microcontroller outputs without external level-shifting.

The device supports repetitive avalanche energy (E_AS) up to 110 mJ at T_J = 25 °C and exhibits normalized R_DS(on) drift of ≤1.2× from −55 °C to 150 °C, ensuring stable current handling across automotive and industrial ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage before avalanche onset; suitable for 24 V nominal bus systems with transient margin.
R_DS(on) @ V_GS = 10 V	3.3 mΩ - Enables ≤1.6 W conduction loss at 49 A DC, reducing heatsink requirements in compact power stages.
I_D (continuous)	49 A @ T_C = 25 °C - Sustained current capability under ideal heatsinking; derates to 27 A at T_C = 100 °C per datasheet curve.
Q_G	42 nC - Total gate charge determines driver strength requirement; enables <100 ns turn-on with 0.5 A peak gate current.
E_AS	110 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching stress without external snubbers.
Package	D-Pak (TO-252AA) - Surface-mount outline with exposed drain pad for direct thermal coupling to PCB copper; no through-hole mounting required.

Pinout & Package

D-Pak (TO-252AA) package with three terminals: Drain (tab and pins 2–3), Source (pin 1), Gate (pin 4). The large copper drain tab provides primary thermal path to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Source	Main current return node; electrically tied to PCB source trace and thermal ground plane.
Pins 2 & 3	Drain	High-current power input/output node; connected to internal die drain metallization and exposed copper tab.
Pin 4	Gate	Control terminal requiring <2.5 V threshold; sensitive to ESD; routed away from noisy power traces.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V, eliminating need for gate driver ICs in 5 V MCU-based systems.
100% UIS tested	Each unit validated for unclamped inductive switching stress, ensuring field reliability in motor and solenoid loads.
Low Q_GD/Q_G ratio	0.32 - Reduces Miller-induced shoot-through risk in half-bridge configurations and improves switching controllability.
Enhanced body diode dV/dt immunity	Rated for >4.5 V/ns - Prevents false turn-on during high-speed commutation in synchronous rectification.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 24 V input to 5 V/10 A output step-down converter in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with 30 ns dead-time control.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by 42% versus comparable 5 mΩ MOSFETs, lowering thermal load on 2-layer PCB.

Use Scenario: Full-H-bridge driving 12 V, 15 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled leg, switching at 16 kHz with 100 ns rise/fall times.

Use Value: 110 mJ E_AS withstands back-EMF spikes during abrupt direction reversal without external clamping diodes.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: 30 V, 3 A constant-current stage for high-bay LED luminaires with analog dimming.

IC Role / Device Role / Timing Role: Series pass element regulated via op-amp feedback loop with 100 kHz current-sense bandwidth.

Use Value: 1.0–2.5 V V_GS(th) range ensures predictable turn-on across temperature, minimizing current regulation drift.

Use Scenario: Inrush current limiter for 24 V backplane insertion in telecom shelf management.

IC Role / Device Role / Timing Role: Linear-mode active current limit switch controlled by external ramp generator.

Use Value: SOA-limited safe operating area supports 200 ms linear-mode operation at 10 A without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3303PBF	R_DS(on) = 3.8 mΩ @ 4.5 V; lower gate charge (36 nC); same package.	Better suited for 3.3 V gate drive systems where V_GS < 4.5 V is typical.	Select when MCU I/O voltage is 3.3 V and gate drive current is limited.
STP30NF3LL	R_DS(on) = 3.5 mΩ @ 10 V; higher Q_G (52 nC); TO-220 package.	Requires through-hole mounting and larger heatsink; not surface-mount compatible.	Choose only if board layout mandates through-hole components or higher single-pulse surge tolerance is needed.

Compared with IRL3303PBF, IRFU3303PBF delivers lower R_DS(on) at 10 V drive and higher avalanche robustness; versus STP30NF3LL, it offers superior thermal performance in space-constrained SMT designs but requires careful gate drive impedance tuning to manage dv/dt.

Availability

IRFU3303PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFU3303PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains full product continuity, quality control, and technical documentation for legacy IRF power MOSFETs.

The IRFU series targets high-reliability surface-mount power switching in industrial automation and transportation systems, emphasizing ruggedness, thermal efficiency, and ease of PCB integration over cost-optimized consumer-grade alternatives.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFU3303PBF has a rated maximum junction temperature of 175 °C. Continuous operation at this limit requires strict thermal design: ≥400 mm² of 2-oz copper connected to the drain tab, ≤1.2 °C/W board-level thermal resistance, and ambient temperature ≤85 °C. Derating curves in the datasheet must be applied for sustained current above 27 A at T_C = 100 °C.

Does IRFU3303PBF support 3.3 V logic-level gate drive?

No - while V_GS(th) starts as low as 1.0 V, the device does not guarantee full enhancement at 3.3 V. At V_GS = 3.3 V, R_DS(on) rises to ≥12 mΩ, increasing conduction loss by >3.5×. For 3.3 V systems, IRL3303PBF (specified down to 2.5 V) is the recommended alternative with verified 3.8 mΩ performance at that voltage.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the drain tab is internally connected to pins 2 and 3 and is at drain potential. When soldered to a PCB copper pour, that pour becomes part of the drain circuit. Isolation requires non-conductive thermal interface material and clearance from adjacent signal or ground planes per IPC-2221 creepage requirements for 30 V working voltage.

What is the recommended gate resistor value for 250 kHz switching?

A 10 Ω gate resistor is recommended for 250 kHz operation with a 0.5 A peak gate driver. This value balances switching speed (≈45 ns turn-on) against ringing suppression and EMI control. Lower values (<5 Ω) increase dv/dt stress and risk parasitic turn-on; higher values (>22 Ω) extend switching losses beyond acceptable limits for continuous 49 A operation.

IRFU3303PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3303PBF FAQ

1.How can I place an order for IRFU3303PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3303PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3303PBF reliable?

The price and inventory of IRFU3303PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3303PBF is usually 5 days.

3.What payment methods are accepted for IRFU3303PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3303PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3303PBF?

IRFU3303PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3303PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3303PBF?

For technical support, including IRFU3303PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3303PBF requirements.

6.How does Aetrix verify that IRFU3303PBF is sourced from the original manufacturer or authorized distributors?

All IRFU3303PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3303PBF meets industry standards.

7.What is the process for return or replacement of IRFU3303PBF?

All IRFU3303PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3303PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3303PBF part is unused and in its original packaging.

Return procedure for IRFU3303PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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