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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3410

Name: IRFU3410
Brand: Infineon Technologies
SKU: IRFU3410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU3410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3410.pdf

Description:: MOSFET N-CH 100V 31A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,243

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Product details

Overview

IRFU3410 from Infineon Technologies (formerly International Rectifier) is a 100 V, 31 A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, featuring 39 mΩ R_DS(on) at V_GS = 10 V, 125 A pulsed drain current, and optimized gate charge (Q_g = 37 nC typ.) for high-frequency DC-DC converters.

For engineers reviewing the IRFU3410 datasheet, IRFU3410 pinout, IRFU3410 application, or IRFU3410 equivalent, key selection criteria include its low R_DS(on), fast switching (t_r = 27 ns, t_f = 13 ns), robust avalanche rating (E_AS = 140 mJ), and thermal resistance (R_θJC = 1.4 °C/W) - all critical for compact, high-efficiency power stages.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve low conduction loss and controlled capacitive behavior. Its C_iss = 1690 pF, C_oss = 220 pF, and C_rss = 26 pF support predictable hard-switching performance up to several hundred kHz.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 18 A and t_rr = 84 ns with Q_rr = 260 nC, enabling reliable synchronous rectification and unclamped inductive switching in buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus designs with 2× safety margin against transients
R_DS(on) max	39 mΩ at V_GS = 10 V, T_J = 25°C - enables ≤1.2 W conduction loss at 18 A continuous
I_D continuous	31 A at T_C = 25°C - rated for PCB-mount thermal interface with heatsink
Q_g	37 nC typ. - reduces gate drive power and enables 500 kHz+ PWM operation with standard drivers
E_AS	140 mJ single-pulse - withstands energy from inductive turn-off without external snubber
R_θJC	1.4 °C/W - allows direct case-to-heatsink mounting for high-power density layouts
t_r/t_f	27 ns / 13 ns - minimizes switching transition losses in hard-switched converters

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration: Drain (pins 1 & 2 & tab), Source (pin 3), Gate (pin 1 leadframe tie).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pins 1 & 2)	Main current path collector	Electrically and thermally connected to PCB copper pour; primary heat dissipation path
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision gate control
Gate (Pin 1 leadframe)	Control terminal for channel modulation	High-impedance input requiring <10 Ω series resistance to damp ringing in high-dV/dt environments

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	11 nC - reduces Miller-induced shoot-through risk and improves voltage-controlled switching stability
Fully characterized C_oss(eff)	250 pF - enables accurate calculation of turn-off energy and snubber sizing across full V_DS range
Avalanche-rated	140 mJ E_AS - eliminates need for external clamping in flyback or active clamp circuits
Lead-free (PbF)	RoHS-compliant finish - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly
Body diode Q_rr	260 nC - supports zero-voltage switching (ZVS) design in resonant topologies when paired with appropriate timing

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 300–600 kHz with precise dead-time control.

Use Value: 39 mΩ R_DS(on) and 1.4 °C/W R_θJC enable >95% efficiency and <5°C junction rise above heatsink at full load.

Use Scenario: Inverter stage for 0.5–2 kW BLDC motor drives in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge, operating with 10–20 kHz PWM and regenerative braking.

Use Value: 125 A pulsed rating and 140 mJ avalanche energy tolerate motor inductance kickback during fault conditions without failure.

Telecom DC-DC

LED Driver

Use Scenario: Isolated forward or active-clamp forward converter in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Primary-side switch handling 100 V bus with 500 kHz switching and tight duty-cycle control.

Use Value: Low C_rss (26 pF) and fast t_f (13 ns) minimize cross-conduction loss and improve light-load efficiency.

Use Scenario: Constant-current buck driver for high-brightness LED arrays in street lighting (36–72 V input).

IC Role / Device Role / Timing Role: Main power switch regulating average LED current via PWM dimming at 1–20 kHz.

Use Value: Body diode t_rr = 84 ns and Q_rr = 260 nC prevent voltage overshoot and EMI during diode commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF10	R_DS(on) = 38 mΩ, Q_g = 45 nC, TO-220 package	Larger footprint, higher thermal resistance (R_θJC = 1.5 °C/W), no exposed drain pad	Preferred where through-hole mounting or legacy board layout requires TO-220 form factor
IXTP30N10P	R_DS(on) = 32 mΩ, Q_g = 42 nC, TO-220FP package	Vertical FET structure yields lower C_oss but higher cost; not RoHS-compliant by default	Selected when lowest possible R_DS(on) is prioritized over gate drive simplicity and lead-free compliance

Compared with STP36NF10 and IXTP30N10P, the IRFU3410 offers superior thermal performance in surface-mount format, tighter Q_g/R_DS(on) trade-off for high-frequency use, and guaranteed Pb-free construction - making it optimal for space-constrained, high-reliability DC-DC modules.

Availability

IRFU3410 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and LED drivers requiring stable component supply across extended production lifecycles.

Supply support for IRFU3410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon MOSFET and IGBT development.

The IRFU3410 belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies and motor control applications demanding low R_DS(on), fast switching, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFU3410 supports 22 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package under real-world PCB mount conditions with limited copper area, and must be verified using the normalized R_DS(on) vs. temperature curve (Fig 4) and actual thermal design.

Does the IRFU3410 have a built-in body diode, and what are its key parameters?

Yes, the IRFU3410 integrates a monolithic p-n junction body diode. Key parameters include V_SD = 1.3 V at I_S = 18 A and T_J = 25°C, reverse recovery time t_rr = 84 ns, and Q_rr = 260 nC under specified test conditions (di/dt = 100 A/µs). These values are measured with V_GS = 0 V and define diode performance in synchronous rectification and freewheeling roles.

Can the IRFU3410 be used in avalanche mode, and what is its rated energy?

Yes, the IRFU3410 is fully rated for repetitive unclamped inductive switching (UIS). Its single-pulse avalanche energy E_AS is 140 mJ at T_J = 25°C, with I_AR = 18 A peak avalanche current. Operation within the Safe Operating Area (SOA) curves (Fig 8) and adherence to pulse width limits per Fig 12c are required to ensure reliability under avalanche stress.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) is specified from 2.0 V to 4.0 V at I_D = 250 µA. This range indicates moderate process variation and necessitates gate drive voltages ≥10 V to ensure full enhancement and minimal R_DS(on). Drive circuits must provide sufficient voltage headroom and current capability to overcome Q_g = 37 nC within required switching times while avoiding unintended turn-on from noise coupling.

IRFU3410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3410 FAQ

1.How can I place an order for IRFU3410 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3410 reliable?

The price and inventory of IRFU3410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3410 is usually 5 days.

3.What payment methods are accepted for IRFU3410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3410?

IRFU3410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3410?

For technical support, including IRFU3410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3410 requirements.

6.How does Aetrix verify that IRFU3410 is sourced from the original manufacturer or authorized distributors?

All IRFU3410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3410 meets industry standards.

7.What is the process for return or replacement of IRFU3410?

All IRFU3410 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3410 part is unused and in its original packaging.

Return procedure for IRFU3410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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