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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3504PBF

Name: IRFU3504PBF
Brand: Infineon Technologies
SKU: IRFU3504PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU3504PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3504PBF.pdf

Description:: MOSFET N-CH 40V 30A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,979

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Product details

Overview

IRFU3504PBF from Infineon Technologies (formerly International Rectifier) is a 40V, 30A (package-limited), N-channel enhancement-mode power MOSFET in the through-hole I-Pak package. It features 9.2 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 480 mJ. It is used as a primary switching element in DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRFU3504PBF datasheet, IRFU3504PBF pinout, IRFU3504PBF application, or IRFU3504PBF equivalent, key selection criteria include its 40V V_DS, 9.2 mΩ on-resistance at 30A/10V, 140W T_C=25°C power dissipation, fast 11 ns turn-on delay, and body diode reverse recovery time of 53–80 ns under defined conditions.

Technical Context

This device operates as a unidirectional voltage-controlled switch with gate-driven conduction control. Its low R_DS(on) and optimized gate charge (Q_g = 48–71 nC) enable high-efficiency hard-switching in 20–100 kHz power stages. The integrated body diode supports freewheeling in inductive loads but exhibits 1.3 V forward drop at 30 A and 25°C.

The I-Pak package provides mechanical robustness for through-hole mounting and delivers 1.09 °C/W junction-to-case thermal resistance. Its safe operating area (SOA) is limited by R_DS(on) at high V_DS and by package current rating (30 A continuous) at low V_DS, with pulse capability up to 350 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage before avalanche; defines use in ≤36 V nominal input systems.
R_DS(on)	9.2 mΩ @ V_GS = 10 V, I_D = 30 A - Directly determines conduction loss (P_cond ≈ 8.3 W at 30 A).
I_D (continuous)	30 A @ T_C = 25°C - Package-limited current; derates to 61 A at T_C = 100°C per SOA curve.
Q_g	48–71 nC - Total gate charge required to fully switch; impacts driver sizing and switching loss at 100 kHz.
t_r/t_f	53 ns / 22 ns - Rise/fall times at V_DD = 20 V, I_D = 30 A, R_G = 6.8 Ω; sets minimum practical switching frequency.
E_AS (tested)	480 mJ - Single-pulse avalanche energy validated per JEDEC JESD24-1; enables unclamped inductive switching without failure.
V_SD	1.3 V @ I_S = 30 A, T_J = 25°C - Body diode forward voltage; affects freewheeling loss and reverse recovery behavior.
R_θJC	1.09 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for 140 W power dissipation at T_C = 25°C.

Pinout & Package

The IRFU3504PBF uses the industry-standard I-Pak (TO-251AA) through-hole package with three leads: Drain (tab-connected), Source (two pins), and Gate (single pin). Thermal path is optimized via the exposed drain tab soldered to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pin)	Main high-side current path	Electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential.
Source (Pin 1 & Pin 2)	Reference node for gate drive and current return	Dual-source configuration lowers source inductance (L_S = 7.5 nH); critical for high-di/dt stability.
Gate (Pin 3)	Control terminal for channel formation	High-impedance input requiring <200 nA leakage at ±20 V; sensitive to ESD and ringing without proper RC snubbing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.2 mΩ at 10 V gate drive reduces conduction loss by >35% vs. legacy 40 V MOSFETs in 12 V buck converters.
175°C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating below full current capability.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping in relay drivers.
Fast switching with low Q_gd	20 nC Miller charge minimizes shoot-through risk and improves gate drive efficiency in half-bridge topologies.
Optimized body diode	53–80 ns t_rr and 86–130 nC Q_rr reduce switching loss during synchronous rectification transitions.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24 V bus to 5 V/3.3 V logic rails in industrial PLC modules.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 200 kHz with forced PWM mode.

Use Value: 9.2 mΩ R_DS(on) limits conduction loss to <1 W at 15 A load, enabling compact heatsink-free design.

Use Scenario: H-bridge phase-control for 12–24 V brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 30 A peak.

Use Value: 480 mJ avalanche rating absorbs inductive kickback during rapid direction reversal without snubber circuits.

AC-DC Auxiliary Supply

LED Constant-Current Driver

Use Scenario: Discrete flyback switch in 5–12 W auxiliary power supply for smart meter MCU and sensors.

IC Role / Device Role / Timing Role: Primary-side switch with self-supplied gate drive and ZCD feedback.

Use Value: 1.09 °C/W R_θJC allows direct PCB copper heatsinking, eliminating discrete thermal pad in cost-sensitive designs.

Use Scenario: Constant-current switch in 24 V input, 350 mA output LED driver for streetlight control modules.

IC Role / Device Role / Timing Role: Linear-regulated pass element in analog dimming architecture.

Use Value: 175°C T_Jmax ensures reliability under sustained 75°C ambient and 100% duty cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A, 40 mΩ R_DS(on), TO-220 package	Higher voltage margin but higher conduction loss; requires larger heatsink at 30 A	Select when system requires >100 V transient immunity and board space permits TO-220 footprint.
IXTP30N10P	100 V V_DS, 30 A, 32 mΩ R_DS(on), TO-220AB package	Lower avalanche rating (200 mJ), no specified repetitive avalanche capability	Prefer only in non-inductive or clamped switching applications where avalanche stress is absent.

Compared with STP30NF20 and IXTP30N10P, IRFU3504PBF offers superior conduction efficiency at 40 V systems, verified repetitive avalanche robustness, and I-Pak mechanical compatibility with high-vibration through-hole layouts-making it optimal for compact, ruggedized 12–24 V power stages.

Availability

IRFU3504PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and auxiliary power supplies requiring stable component supply across extended production lifecycles.

Supply support for IRFU3504PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and uninterruptible power systems-emphasizing low R_DS(on), rugged avalanche performance, and thermal robustness.

FAQ

What is the maximum continuous drain current for IRFU3504PBF at 100°C case temperature?

The maximum continuous drain current is 61 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, VGS @ 10V". This value reflects silicon-limited current and assumes adequate heatsinking to maintain case temperature at 100°C.

Does IRFU3504PBF support gate drive from a 5 V microcontroller?

No. The gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve the specified 9.2 mΩ R_DS(on). Driving from 5 V results in significantly higher on-resistance (>50 mΩ), excessive conduction loss, and thermal instability at rated current.

Is the body diode in IRFU3504PBF suitable for synchronous rectification?

The body diode has a forward voltage of 1.3 V at 30 A and reverse recovery time of 53–80 ns, making it usable in low-frequency (<50 kHz) synchronous rectification. However, its Q_rr (86–130 nC) and lack of soft-recovery characteristics limit efficiency in high-frequency or high-di/dt applications versus dedicated Schottky or GaN-based solutions.

Can IRFU3504PBF be mounted directly to a heatsink?

Yes-the drain is internally connected to the metal tab, enabling direct heatsink attachment. Electrical isolation is required unless the heatsink is referenced to the drain potential. Use UL-rated insulating pads (e.g., mica or silicone) and torque screws to 0.5 N·m to ensure optimal R_θJC = 1.09 °C/W performance.

IRFU3504PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3504PBF FAQ

1.How can I place an order for IRFU3504PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3504PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3504PBF reliable?

The price and inventory of IRFU3504PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3504PBF is usually 5 days.

3.What payment methods are accepted for IRFU3504PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3504PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3504PBF?

IRFU3504PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3504PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3504PBF?

For technical support, including IRFU3504PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3504PBF requirements.

6.How does Aetrix verify that IRFU3504PBF is sourced from the original manufacturer or authorized distributors?

All IRFU3504PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3504PBF meets industry standards.

7.What is the process for return or replacement of IRFU3504PBF?

All IRFU3504PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3504PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3504PBF part is unused and in its original packaging.

Return procedure for IRFU3504PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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