Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFU3504Z

Part No.:
IRFU3504Z
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU3504Z.pdf
Description:
MOSFET N-CH 40V 42A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,537

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFU3504Z from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 40V VDSS, 9.0 mΩ RDS(on) at VGS = 10V, and 42A continuous drain current at TC = 25°C. It features 175°C maximum junction temperature, fast switching (td(on) = 15 ns, tf = 38 ns), and rated repetitive avalanche capability - optimized for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the IRFU3504Z datasheet, IRFU3504Z pinout, IRFU3504Z application, or IRFU3504Z equivalent, key selection criteria include its low RDS(on) at 10V gate drive, robust avalanche energy rating (EAS = 310 mJ), thermal performance (RθJC = 1.66°C/W), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its integral body diode supports synchronous rectification and freewheeling in buck converters and H-bridge motor drivers, with confirmed trr = 18–27 ns and Qrr = 9.2–14 nC at IF = 42A.

The device operates with gate threshold voltage VGS(th) = 2.0–4.0 V and exhibits stable RDS(on) up to 175°C (normalized resistance ≤2.0× at TJ = 150°C). Avalanche capability is thermally limited and validated per unclamped inductive test (Fig. 12a–c), supporting reliable operation in inductive load switching.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage before avalanche; suitable for 12V/24V automotive bus systems with transient margin.
RDS(on) @ VGS = 10V9.0 mΩ max - Enables <1.6 W conduction loss at 42A, critical for thermally constrained engine control units.
ID @ TC = 25°C42 A - Continuous drain current rating under ideal heatsinking; derates linearly above 25°C case temp.
EAS310 mJ - Single-pulse avalanche energy; allows safe turn-off into inductive loads without snubbers in starter solenoid drivers.
tf / tr38 ns / 74 ns - Fast switching transitions reduce switching losses in 100–500 kHz DC-DC stages.
TJ max175°C - Extended junction temperature enables operation in high-ambient under-hood environments.
Qg45 nC max - Gate charge determines driver strength requirement; compatible with standard 1A peak gate drivers.

Pinout & Package

IRFU3504Z uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.73 × 6.22 mm and is RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)Control input (G)High-impedance MOSFET gate; requires 2.0–4.0 V threshold to turn on; driven by PWM controller or gate driver IC.
Pin 3 (Drain)Power output (D)High-side power node; connected to load or supply rail; electrically tied to exposed metal tab for thermal path.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, transmission, and ADAS power stages.
Repetitive avalanche ratedRated for repeated unclamped inductive switching up to TJmax; eliminates need for external clamping in many motor drive topologies.
Ultra-low RDS(on)9.0 mΩ at 10V drive enables >95% efficiency in 12V-to-5V/3.3V point-of-load converters at 20A.
175°C junction ratingSupports operation in ambient temperatures up to 125°C with appropriate PCB copper area and airflow.
Fast body diodetrr = 18–27 ns and Qrr = 9.2–14 nC enable efficient synchronous rectification without excessive shoot-through risk.

Applications

Engine Control Unit (ECU) Fuel Injector DriverAutomotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12V fuel injectors with inductive kickback suppression.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive 42A pulsed loads with 15 ns turn-on delay.

Use Value: 310 mJ avalanche energy rating absorbs inductive energy without snubber, reducing BOM count and board space.

Use Scenario: PWM-controlled DC motor driving cabin air blower in passenger compartment.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in brushed DC motor H-bridge; operates at 20–30 kHz with 38 ns fall time.

Use Value: 9.0 mΩ RDS(on) limits conduction loss to <1.6 W at full load, enabling compact thermal design without heatsink.

12V-to-5V Automotive DC-DC ConverterStart-Stop System Solenoid Driver

Use Scenario: Synchronous rectifier in buck converter supplying infotainment system power.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; leverages fast body diode (trr = 18 ns) for zero-voltage switching.

Use Value: Qrr = 9.2 nC minimizes reverse recovery loss, improving efficiency by ~2.5% over standard MOSFETs at 200 kHz.

Use Scenario: High-current solenoid actuation during engine cranking in start-stop systems.

IC Role / Device Role / Timing Role: High-side or low-side switch delivering 42A pulses for 100 ms duration; withstands battery transients up to 40V.

Use Value: 175°C TJmax ensures reliability during repeated cranking cycles where case temperature exceeds 100°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL130N4LH5RDS(on) = 3.3 mΩ @ 10V; smaller PowerFLAT 5x6 package; no AEC-Q101 certification.Higher efficiency but lower thermal robustness; unsuitable for under-hood locations requiring 175°C rating.Select only for non-automotive or cabin-mounted applications where space is critical and ambient <85°C.
ON Semiconductor NTMFS4C09NT1GRDS(on) = 9.0 mΩ @ 10V; same D-Pak package; AEC-Q101 qualified; slightly higher Qg (52 nC).Identical voltage/current ratings and automotive qualification; slower switching due to higher gate charge.Drop-in replacement where gate drive strength ≥1.2A peak is available; verify layout for increased switching loss.

Compared with STL130N4LH5 and NTMFS4C09NT1G, IRFU3504Z offers the best balance of automotive qualification, thermal margin, and proven avalanche ruggedness - making it preferred for safety-critical engine bay switching where reliability outweighs marginal efficiency gains.

Availability

IRFU3504Z is available at Aetrix Electronics and suitable for engine control units, HVAC motor controllers, and start-stop system solenoid drivers requiring stable component supply across extended automotive production lifecycles.

Supply support for IRFU3504Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap devices.

The IRFU3504Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine management, transmission control, and chassis systems.

FAQ

Is IRFU3504Z pin-compatible with IRFR3504Z?

Yes - IRFU3504Z (D-Pak/TO-252) and IRFR3504Z (I-Pak/TO-220AB) share identical electrical specifications and pinout assignment (G-S-D), but differ in package type and thermal performance. IRFU3504Z has lower RθJA (40°C/W vs. 110°C/W) due to surface-mount construction and exposed drain pad, making it better suited for high-density automotive PCBs.

What is the maximum recommended gate resistor for IRFU3504Z in 200 kHz switching?

For 200 kHz operation, a 10 Ω gate resistor is recommended to limit peak gate current to ~1.5 A while maintaining tf < 50 ns. This value balances switching loss reduction against EMI generation and gate driver stress, based on Qg = 45 nC and typical 12V gate drive amplitude.

Does IRFU3504Z require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO cannot safely drive IRFU3504Z due to its 45 nC gate charge and required 10V VGS. Direct MCU drive risks slow switching, shoot-through, and thermal failure. A dedicated gate driver (e.g., Infineon 1EDN7512B) is mandatory to achieve specified td(on)/tf and ensure reliable 42A switching.

How is the 310 mJ avalanche energy rating validated?

The 310 mJ EAS rating is measured per JEDEC JESD24-11 using unclamped inductive switching (UIS) test circuit (Fig. 12a), with VDD = 32V, IAS = 42A, and pulse width calibrated to reach TJmax = 175°C. Each production lot undergoes 100% UIS screening at 80% of rated EAS.

IRFU3504Z Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1510 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU3504Z FAQ

1.How can I place an order for IRFU3504Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3504Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3504Z reliable?

The price and inventory of IRFU3504Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3504Z is usually 5 days.

3.What payment methods are accepted for IRFU3504Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3504Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3504Z?

IRFU3504Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3504Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3504Z?

For technical support, including IRFU3504Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3504Z requirements.

6.How does Aetrix verify that IRFU3504Z is sourced from the original manufacturer or authorized distributors?

All IRFU3504Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3504Z meets industry standards.

7.What is the process for return or replacement of IRFU3504Z?

All IRFU3504Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3504Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3504Z part is unused and in its original packaging.

Return procedure for IRFU3504Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFU3504Z Tags

  • IRFU3504Z
  • IRFU3504Z PDF
  • IRFU3504Z Datasheet
  • IRFU3504Z Specifications
  • IRFU3504Z Images
  • Infineon Technologies
  • Infineon Technologies IRFU3504Z
  • Buy IRFU3504Z
  • IRFU3504Z Price
  • IRFU3504Z Distributor
  • IRFU3504Z Supplier
  • IRFU3504Z Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER