Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3518-701PBF

Name: IRFU3518-701PBF
Brand: Infineon Technologies
SKU: IRFU3518-701PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFU3518-701PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3518-701PBF.pdf

Description:: MOSFET N-CH 80V 38A IPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,709

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFU3518-701PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, rated for 80 V V_DS, 29 mΩ R_DS(on) at V_GS = 10 V and I_D = 18 A, with 38 A continuous drain current at T_C = 25°C. It is optimized for high-frequency DC-DC converters requiring low gate charge and fast switching.

For engineers reviewing the IRFU3518-701PBF datasheet, IRFU3518-701PBF pinout, IRFU3518-701PBF application, or IRFU3518-701PBF equivalent, key selection criteria include its 37 nC total gate charge, 12 ns turn-on delay, 1710 pF input capacitance, avalanche-rated 160 mJ single-pulse energy, and junction-to-case thermal resistance of 1.4 °C/W - all critical for synchronous buck converter and motor drive designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized output capacitance (C_oss = 270 pF at V_DS = 25 V) and effective C_oss = 330 pF across 0–64 V, enabling accurate soft-switching loss estimation. Its gate threshold voltage (2.0–4.0 V) and forward transconductance (34 S) support robust gate drive margin in 5 V and 12 V control systems.

The device integrates a fast body diode with t_rr = 77 ns and Q_rr = 210 nC at dI/dt = 100 A/µs, and is rated for unclamped inductive switching up to 18 A avalanche current. Thermal design is supported by validated transient Z_thJC curves and linear derating (0.71 W/°C above 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus and 60 V transient clamp applications
R_DS(on) max	29 mΩ @ V_GS = 10 V, I_D = 18 A - Enables <1.1 W conduction loss at 20 A in PCB-mount thermal layout
Q_g typ	37 nC - Reduces gate driver power demand and switching transition time in 500 kHz+ converters
t_d(on)	12 ns - Supports precise timing control in synchronous rectification and phase-shifted topologies
E_AS	160 mJ - Withstands single-pulse inductive energy without failure in motor gate-drive snubberless designs
R_θJC	1.4 °C/W - Allows direct heatsink mounting for >80 W continuous power dissipation at T_C ≤ 100°C
C_iss	1710 pF - Determines Miller effect magnitude and required gate drive strength at 1 MHz switching

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Drain (pins 1 & 2), Source (pin 3), Gate (pin 1 tab edge).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1 & 2)	Main current path collector	Electrically and thermally connected to exposed copper pad; requires minimum 200 mm² 2-oz copper pour for R_θJC compliance
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance return path essential for stable switching; ties directly to power ground plane
Gate (Tab edge, Pin 1 side)	Control electrode	Requires <10 Ω series resistance to suppress ringing; sensitive to ESD (±20 V absolute max)

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	12/37 nC = 0.32 - Minimizes Miller-induced shoot-through risk in half-bridge configurations
Fully characterized C_oss(eff)	330 pF over 0–64 V - Enables accurate calculation of resonant tank behavior in LLC converters
Avalanche-rated	18 A I_AR, 160 mJ E_AS - Eliminates need for external clamping in brushed DC motor H-bridge freewheeling
Lead-free (PbF)	RoHS-compliant finish with 300°C solderability (10 s, 1.6 mm from case) - Compatible with lead-free reflow profiles
Body diode t_rr	77 ns with 210 nC Q_rr - Reduces reverse recovery loss vs. standard MOSFETs in synchronous rectifier replacement

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 48 V input, 12 V/100 A output multiphase buck converter in AI accelerator server power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 600 kHz with 50 ns dead-time control.

Use Value: 29 mΩ R_DS(on) and 37 nC Q_g enable >95% efficiency at full load while maintaining thermal margin on 4-layer PCB.

Use Scenario: 24–48 V brushed DC motor controller for automated guided vehicle (AGV) steering actuator.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge with integrated body diode conducting regenerative braking current.

Use Value: 77 ns t_rr and 160 mJ E_AS prevent diode-induced voltage spikes during rapid direction reversal.

Telecom DC-DC

LED Driver

Use Scenario: Isolated flyback primary-side switch in 48 V telecom shelf power module.

IC Role / Device Role / Timing Role: Main switching transistor with 80 V V_DS headroom for reflected flyback voltage and line surges.

Use Value: 1.4 °C/W R_θJC allows direct heatsink attachment to meet EN 62368-1 thermal safety limits at 65°C ambient.

Use Scenario: Constant-current buck LED driver for high-bay industrial lighting (36 V, 3 A string).

IC Role / Device Role / Timing Role: PWM-controlled current regulator with analog dimming via gate voltage modulation.

Use Value: 2.0–4.0 V V_GS(th) enables precise 3.3 V MCU GPIO control without level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR3518PbF	I-Pak package (TO-220AB variant); identical die, higher R_θJA (110 °C/W vs. 40 °C/W)	Better suited for through-hole prototyping or lower-power PCB layouts without heatsinking	Select when mechanical mounting constraints favor through-hole or when thermal interface to heatsink is less controlled
STP80NF55-08	55 V V_DS, 8 mΩ R_DS(on), higher Q_g (120 nC), TO-220 package	Higher current density but unsuitable for 48 V bus transient protection due to lower V_DS	Prefer only in 24 V systems where lower R_DS(on) justifies increased gate drive loss and reduced voltage margin

Compared with IRFR3518PbF, the IRFU3518-701PBF offers superior thermal performance in surface-mount layouts, while STP80NF55-08 trades voltage headroom for conduction efficiency - making the IRFU3518-701PBF optimal for compact, high-frequency 48 V DC-DC designs demanding reliability under transient stress.

Availability

IRFU3518-701PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC modules, and LED drivers requiring stable component supply and long-term manufacturability.

Supply support for IRFU3518-701PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET product family with full documentation and application engineering resources.

The HEXFET Power MOSFET product line was designed specifically for high-efficiency, high-frequency power conversion in computing, industrial, and communications infrastructure - emphasizing low Q_g, rugged avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum safe operating frequency for IRFU3518-701PBF in hard-switched applications?

Based on its 12 ns turn-on delay, 25 ns rise time, and 37 nC total gate charge, the IRFU3518-701PBF supports reliable hard-switched operation up to 1 MHz in well-designed gate-drive circuits with <10 Ω series resistance and minimized loop inductance. Efficiency begins to decline above 800 kHz due to switching loss dominance, especially at >20 A load currents.

Can IRFU3518-701PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.09 V/°C breakdown voltage drift) ensures current sharing stability. Parallel operation requires matched gate drive impedance (<2 Ω difference), symmetrical PCB layout, and individual source resistors (0.01 Ω) for dynamic balancing. Derate total current by 15% for thermal margin.

Does the body diode support continuous bidirectional current in synchronous rectification?

No - the body diode is rated for pulsed source current (I_SM = 150 A) and continuous source current (I_S) equal to I_D = 38 A at T_C = 25°C, but its 1.3 V forward drop and 77 ns reverse recovery make it unsuitable for sustained bidirectional conduction. Use external Schottky or synchronous FETs for true bidirectional paths.

What is the recommended PCB footprint and thermal pad layout for D-Pak mounting?

Use a minimum 200 mm² (20 × 10 mm) 2-ounce copper thermal pad connected to internal ground planes via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch). Maintain 0.25 mm solder mask opening around the drain pad and avoid silkscreen over the pad. IPC-7351B D-Pak (TO-252AA) land pattern is mandatory for solder joint reliability and thermal performance.

IRFU3518-701PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3518-701PBF FAQ

1.How can I place an order for IRFU3518-701PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3518-701PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3518-701PBF reliable?

The price and inventory of IRFU3518-701PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3518-701PBF is usually 5 days.

3.What payment methods are accepted for IRFU3518-701PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3518-701PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3518-701PBF?

IRFU3518-701PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3518-701PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3518-701PBF?

For technical support, including IRFU3518-701PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3518-701PBF requirements.

6.How does Aetrix verify that IRFU3518-701PBF is sourced from the original manufacturer or authorized distributors?

All IRFU3518-701PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3518-701PBF meets industry standards.

7.What is the process for return or replacement of IRFU3518-701PBF?

All IRFU3518-701PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3518-701PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3518-701PBF part is unused and in its original packaging.

Return procedure for IRFU3518-701PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.