Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3607-701PBF

Name: IRFU3607-701PBF
Brand: Infineon Technologies
SKU: IRFU3607-701PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFU3607-701PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3607-701PBF.pdf

Description:: MOSFET N-CH 75V 56A IPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,294

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFU3607-701PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, designed for high-efficiency synchronous rectification and hard-switched SMPS topologies. It delivers 75 V V_DS, 7.34 mΩ typical R_DS(on) at V_GS = 10 V, 56 A package-limited continuous drain current, and enhanced avalanche ruggedness with 140 mJ single-pulse E_AS. It is used in UPS systems and high-frequency DC-DC converters where low conduction loss and fast switching are critical.

For engineers reviewing the IRFU3607-701PBF datasheet, IRFU3607-701PBF pinout, IRFU3607-701PBF application, or IRFU3607-701PBF equivalent, key selection criteria include its 9.0 mΩ max R_DS(on), 56 nC typical Q_g, 33–50 ns trr body diode recovery, 1.3 V V_SD, and 1.045 °C/W R_θJC - all validated under TJ = 25°C and TC = 25°C conditions per IRF's AN-994 mounting guidelines.

Technical Context

This MOSFET employs a planar silicon process optimized for low gate charge and robust unclamped inductive switching (UIS). Its dynamic parameters - including 16 nC Q_gd, 110 ns rise time, and 96 ns fall time - support operation up to several hundred kHz in hard-switched converters. The integrated body diode features dI/dt capability up to 1920 A/µs and dV/dt immunity exceeding standard requirements.

The device's SOA is thermally limited by junction-to-case thermal resistance (1.045 °C/W), with safe operating area bounded by R_DS(on) at low V_DS and avalanche energy at high V_DS/low t_av. Avalanche ratings assume T_J ≤ 175°C, with E_AS derated linearly above 25°C starting junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V bus and 60 V clamp designs.
R_DS(on) typ.	7.34 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.8 W conduction loss at 50 A, critical for thermal management in compact SMPS.
I_D (Package)	56 A @ T_C = 25°C - Determined by leadframe and bond-wire limits; sets practical current ceiling without heatsink derating.
Q_g typ.	56 nC - Gate drive energy requirement directly impacts driver sizing and switching loss in high-frequency operation.
trr / Q_rr	33–50 ns / 32–48 nC - Fast, low-charge body diode recovery reduces cross-conduction loss and EMI in synchronous rectifiers.
E_AS	140 mJ (single-pulse, T_J = 25°C) - Supports reliable unclamped inductive switching in UPS and motor control fault conditions.
R_θJC	1.045 °C/W - Enables precise junction temperature estimation using case temperature measurement and power dissipation modeling.

Pinout & Package

IRFU3607-701PBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal performance. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant and lead-free (PbF).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V for full enhancement; threshold voltage 2.0–4.0 V ensures noise immunity in noisy power environments.
Pin 2 (D)	Drain	Main high-side switching node; electrically connected to exposed copper pad - must be soldered to large PCB copper area for thermal conduction.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations or floating reference in high-side sync rectifiers.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	140 mJ single-pulse E_AS with validated thermal failure model - eliminates need for external snubbers in inductive load switching.
Optimized dynamic dv/dt immunity	Rated for high-speed switching with suppressed false turn-on; supports >100 V/ns transient immunity in hard-switched circuits.
Low effective output capacitance	C_{oss eff.}(TR) = 610 pF - reduces turn-off energy loss and improves zero-voltage switching (ZVS) margin in resonant topologies.
Fast, soft-recovery body diode	trr = 33–50 ns, Q_rr = 32–48 nC, I_RRM = 1.9 A - minimizes reverse recovery spikes and enables efficient synchronous rectification without external Schottky assist.
Thermally characterized SOA	SOA curves provided for 10 µs to DC, with explicit wire-bond and silicon-limited boundaries - enables accurate stress analysis in pulse-width modulated loads.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-current, high-efficiency 12 V → 1 V DC-DC conversion in server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with gate-driven body diode commutation.

Use Value: 7.34 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 12 mΩ MOSFETs, enabling 95%+ efficiency at 200 A output while maintaining <85°C case temperature.

Use Scenario: Bidirectional DC link switching in online double-conversion UPS inverters handling 3–5 kVA loads.

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge inverter leg, conducting 50 A RMS with 100–200 kHz PWM modulation.

Use Value: 140 mJ E_AS and 1920 A/µs dI/dt capability ensure reliable operation during battery-backup mode transitions and short-circuit events without desaturation protection.

Telecom DC-DC Brick

High-Frequency SMPS PFC Switch

Use Scenario: Primary-side switch in isolated 48 V input telecom DC-DC bricks delivering 12 V/30 A with <1% output ripple.

IC Role / Device Role / Timing Role: High-side switching element in active-clamp forward or LLC resonant converter, driven by isolated gate driver.

Use Value: 56 nC Q_g and 110 ns rise time enable clean 500 kHz switching with <1.2 W total switching loss, reducing gate driver power and heat sink size.

Use Scenario: Boost switch in active PFC stage of industrial AC-DC power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch handling 10–15 A peak inductor current with sinusoidal line input.

Use Value: 1.3 V V_SD and low Q_rr minimize body diode conduction loss during zero-crossing intervals, improving THD and overall PFC efficiency by 0.4–0.6%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 V, 12.5 mΩ R_DS(on), 75 A ID, TO-220 package - higher R_DS(on), larger footprint, no D-Pak thermal advantage.	Requires mechanical heatsink; unsuitable for space-constrained SMT designs where IRFU3607-701PBF's D-Pak enables direct PCB cooling.	Select when board layout allows through-hole mounting and higher conduction loss is acceptable for cost reduction.
IXTP50N075	75 V, 11.5 mΩ R_DS(on), 50 A ID, TO-220AB - higher R_DS(on), lower current rating, different gate charge profile (Q_g = 65 nC).	Limited to ≤45 A continuous operation; slower switching (tr = 140 ns) increases loss in >300 kHz designs.	Prefer only if legacy TO-220 socket compatibility is mandatory and thermal budget permits 25% higher conduction loss.

Compared with STP75NF75 and IXTP50N075, IRFU3607-701PBF offers superior thermal performance via D-Pak mounting, lowest R_DS(on) in its class, and tighter Q_g/Q_gd ratio - making it optimal for high-density, high-frequency SMPS where PCB real estate and junction temperature are constrained.

Availability

IRFU3607-701PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and high-frequency SMPS requiring stable component supply across production lifecycles.

Supply support for IRFU3607-701PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in server, telecom, and industrial UPS applications.

FAQ

What is the maximum continuous drain current for IRFU3607-701PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 46 A, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, and assumes proper PCB copper area per AN-994 mounting guidelines.

Does IRFU3607-701PBF have a fully characterized avalanche SOA?

Yes - the datasheet provides Figure 8 (Maximum Safe Operating Area) with explicit avalanche-limited curves, and Figure 12 (E_AS vs. I_D) with single-pulse and repetitive avalanche energy ratings. All values are measured per JEDEC JESD24-11 with defined test conditions (L = 0.12 mH, R_G = 25 Ω, I_AS = 46 A).

Can IRFU3607-701PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.096 V/°C) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to maintain uniform junction temperature across devices.

Is the body diode suitable for synchronous rectification without external Schottky assistance?

Yes - the body diode exhibits 33–50 ns reverse recovery time, 32–48 nC Q_rr, and 1.3 V forward drop at 46 A, enabling efficient synchronous rectification in 100–500 kHz SMPS without auxiliary diodes, provided gate timing avoids shoot-through and accounts for V_GS(th) variation.

IRFU3607-701PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3607-701PBF FAQ

1.How can I place an order for IRFU3607-701PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3607-701PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3607-701PBF reliable?

The price and inventory of IRFU3607-701PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3607-701PBF is usually 5 days.

3.What payment methods are accepted for IRFU3607-701PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3607-701PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3607-701PBF?

IRFU3607-701PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3607-701PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3607-701PBF?

For technical support, including IRFU3607-701PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3607-701PBF requirements.

6.How does Aetrix verify that IRFU3607-701PBF is sourced from the original manufacturer or authorized distributors?

All IRFU3607-701PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3607-701PBF meets industry standards.

7.What is the process for return or replacement of IRFU3607-701PBF?

All IRFU3607-701PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3607-701PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3607-701PBF part is unused and in its original packaging.

Return procedure for IRFU3607-701PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…