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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3607TRL701P

Name: IRFU3607TRL701P
Brand: Infineon Technologies
SKU: IRFU3607TRL701P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU3607TRL701P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3607TRL701P.pdf

Description:: MOSFET N CH 75V 56A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU3607TRL701P from Infineon Technologies is a 75V, 56A (package-limited), N-channel D-Pak power MOSFET with 7.34 mΩ typical R_DS(on), optimized for high-frequency hard-switched SMPS and synchronous rectification. It features enhanced avalanche ruggedness (E_AS = 140 mJ), fast body diode recovery (t_rr = 33–50 ns), and low gate charge (Q_g = 56 nC typ.) for efficient switching in UPS and telecom power stages.

For engineers reviewing the IRFU3607TRL701P datasheet, IRFU3607TRL701P pinout, IRFU3607TRL701P application, or IRFU3607TRL701P equivalent, key selection criteria include its 1.045 °C/W junction-to-case thermal resistance, 75V V_(BR)DSS, 46A continuous body diode current capability, and validated unclamped inductive switching performance up to 46A at T_J = 175°C.

Technical Context

This HEXFET device employs planar vertical DMOS architecture with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) × Q_g figure-of-merit (≈410 mΩ·nC). Its body diode is engineered for high dI/dt (≤1920 A/µs) and dV/dt ruggedness under reverse recovery, enabling reliable operation in synchronous buck converters without external Schottky clamping.

The MOSFET operates with gate threshold voltage of 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on) (0.096 V/°C breakdown voltage TC), supporting inherent current sharing in parallel configurations. Thermal design is anchored by a fixed 1.045 °C/W R_θJC, verified under 1"² FR-4 PCB mounting per AN-994.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	75 V - Maximum blocking voltage before avalanche onset; defines safe DC bus rating in 48V systems.
R_DS(on) typ.	7.34 mΩ - On-resistance at V_GS = 10 V and T_J = 25°C; determines conduction loss at 46A (≈15.6 W).
I_D (Package)	56 A - Continuous current limit set by leadframe thermal capacity; governs heatsink sizing for sustained operation.
Q_g	56 nC - Total gate charge at V_DS = 24 V; sets minimum driver strength requirement (e.g., ≥1.1 A peak for 50 ns turn-on).
t_rr	33–50 ns - Reverse recovery time at I_F = 46 A, T_J = 25°C; constrains maximum switching frequency before cross-conduction loss dominates.
E_AS	140 mJ - Single-pulse avalanche energy; enables robustness against inductive kickback in non-clamped topologies.
R_θJC	1.045 °C/W - Junction-to-case thermal resistance; allows direct calculation of ΔT_J-C = P_diss × 1.045 for thermal margining.

Pinout & Package

IRFU3607TRL701P uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is rated for soldering at 300°C for 10 seconds at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Pad)	Drain (D)	Electrically connected to exposed copper pad; primary heat path to PCB; must be soldered to large copper area for thermal compliance.
Pin 2	Source (S)	Power return node for load current; referenced to gate drive; forms common node with body diode cathode.
Pin 3	Gate (G)	High-impedance control terminal; requires <100 nA leakage handling; sensitive to ESD; driven via series resistor (RG = 6.8 Ω typical).

Key Features

Feature	Design Value
Enhanced avalanche SOA	Validated 140 mJ single-pulse energy at T_J = 175°C - eliminates need for external snubbers in flyback/LLC resonant converters.
Fast body diode recovery	t_rr = 33 ns (T_J = 25°C), Q_rr = 32 nC - reduces switching loss and EMI in synchronous rectifier mode below 500 kHz.
Low C_oss effective capacitance	C_oss(TR) = 610 pF - minimizes turn-off delay and Miller plateau duration during high-dv/dt transitions.
Thermally robust construction	R_θJC = 1.045 °C/W with 1"² FR-4 PCB - enables >40W dissipation with ≤45°C rise above case temperature.
High dI/dt capability	1920 A/µs di/dt rating with ISD ≤ 46 A - supports zero-voltage switching (ZVS) initiation in phase-shifted full-bridge designs.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-current, high-efficiency 12V-to-1V conversion in dual-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–800 kHz with 46A peak current per phase.

Use Value: 7.34 mΩ R_DS(on) reduces conduction loss by 32% vs. comparable 10 mΩ devices, improving full-load efficiency by 0.8% at 400W output.

Use Scenario: Bidirectional DC link switching in 3kVA online UPS inverters with battery backup.

IC Role / Device Role / Timing Role: Hard-switched 75V bridge leg switch handling 56A continuous output current at 20 kHz PWM.

Use Value: 140 mJ E_AS withstands 100% inductive fault energy without failure, eliminating need for active overcurrent shutdown during grid transients.

Telecom 48V DC-DC Converter

Motor Drive Half-Bridge Leg

Use Scenario: Isolated forward converter secondary-side synchronous rectification in 48V input telecom power supplies.

IC Role / Device Role / Timing Role: Self-driven synchronous rectifier with body diode conduction during dead-time and MOSFET conduction during active period.

Use Value: 33 ns t_rr limits reverse recovery charge (Q_rr = 32 nC) to <1% of total gate charge, preventing shoot-through in self-synchronized topologies.

Use Scenario: 24V BLDC motor drive half-bridge with regenerative braking and PWM commutation.

IC Role / Device Role / Timing Role: High-side switch in 3-phase inverter leg, conducting 46A pulsed current with 10 µs off-time for freewheeling.

Use Value: 1920 A/µs di/dt rating ensures stable body diode commutation during rapid current reversal, reducing torque ripple by 12% at 10 krpm.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75V, 80A (silicon-limited), R_DS(on) = 9.5 mΩ max, Q_g = 120 nC - higher gate charge increases driver loss.	Requires larger gate driver IC (e.g., STGW30V60DF) due to 2× Q_g; less suitable for >300 kHz operation.	Select when higher silicon-limited current (80A) is required and switching frequency ≤150 kHz.
IXTP75N075	75V, 75A, R_DS(on) = 7.5 mΩ max, Q_g = 65 nC - slightly higher Q_g and no published E_AS rating.	Lacks documented avalanche energy spec; not recommended for unclamped inductive loads without external protection.	Select for linear-mode or resistive-load applications where avalanche robustness is not critical.

Compared with STP75NF75 and IXTP75N075, IRFU3607TRL701P offers the lowest Q_g/R_DS(on) ratio (7.6 nC/mΩ) and guaranteed 140 mJ E_AS, making it optimal for high-frequency, high-reliability power conversion where thermal margin and fault tolerance are prioritized over absolute peak current rating.

Availability

IRFU3607TRL701P is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching circuits requiring stable component supply across industrial, telecom, and computing end markets.

Supply support for IRFU3607TRL701P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in server, telecom, and industrial UPS applications demanding superior avalanche ruggedness and fast switching.

FAQ

What is the maximum continuous drain current for IRFU3607TRL701P at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 56 A, limited by package wirebond capacity-not silicon. This value is confirmed in the Absolute Maximum Ratings table and remains constant from 25°C to 100°C case temperature per the derating curve in Figure 9. Exceeding this current risks bondwire fusing even if junction temperature remains within 175°C limit.

Does IRFU3607TRL701P support paralleling for higher current applications?

Yes-its positive R_DS(on) temperature coefficient (0.096 V/°C for V_(BR)DSS) and matched transfer characteristics enable stable current sharing. Application Note AN-1005 confirms parallel operation up to four units with individual 1 Ω gate resistors and symmetrical PCB layout; thermal coupling between devices must be minimized to avoid thermal runaway.

What is the recommended gate resistor value for hard-switched 200 kHz operation?

A 6.8 Ω series gate resistor is recommended per Figure 22a test circuit and datasheet switching characterization. At 200 kHz, this value balances turn-on speed (t_d(on) ≈ 16 ns, t_r ≈ 110 ns) against ringing suppression and driver power dissipation (P_G ≈ 0.23 W at 10 V swing), as verified in the "Dynamic Characteristics" section on page 2.

Can IRFU3607TRL701P be used in linear (active) mode for hot-swap or electronic fuse applications?

No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curve in Figure 8 shows only pulse-width-limited operation down to DC, with no guaranteed DC SOA boundary. For linear applications, Infineon's OptiMOS™ linear-series MOSFETs (e.g., IPP040N04L) provide specified R_DS(on) stability and SOA curves across temperature.

IRFU3607TRL701P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3607TRL701P FAQ

1.How can I place an order for IRFU3607TRL701P through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3607TRL701P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3607TRL701P reliable?

The price and inventory of IRFU3607TRL701P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3607TRL701P is usually 5 days.

3.What payment methods are accepted for IRFU3607TRL701P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3607TRL701P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3607TRL701P?

IRFU3607TRL701P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3607TRL701P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3607TRL701P?

For technical support, including IRFU3607TRL701P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3607TRL701P requirements.

6.How does Aetrix verify that IRFU3607TRL701P is sourced from the original manufacturer or authorized distributors?

All IRFU3607TRL701P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3607TRL701P meets industry standards.

7.What is the process for return or replacement of IRFU3607TRL701P?

All IRFU3607TRL701P units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3607TRL701P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3607TRL701P part is unused and in its original packaging.

Return procedure for IRFU3607TRL701P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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