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Infineon Technologies IRFU3704

Part No.:
IRFU3704
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU3704.pdf
Description:
MOSFET N-CH 20V 75A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,511

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Product details

Overview

IRFU3704 from Infineon Technologies is a 20V, 75A D-Pak (TO-252AA) N-channel enhancement-mode HEXFET Power MOSFET optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and CPU power delivery. It delivers ultra-low 9.5mΩ RDS(on) at VGS = 10V, 100% RG tested, with fully characterized avalanche capability (EAS = 216mJ) and low gate charge (Qg = 19nC).

For engineers reviewing the IRFU3704 datasheet, IRFU3704 pinout, IRFU3704 application, or IRFU3704 equivalent, key selection criteria include its 20V VDS, 9.5mΩ on-resistance at 10V drive, 19nC total gate charge, 1.7°C/W junction-to-case thermal resistance, and D-Pak footprint compatibility with FR-4 PCB mounting.

Technical Context

This MOSFET employs planar silicon process technology to achieve stable RDS(on) over temperature and robust unclamped inductive switching performance. Its low Qgd/Qg ratio (6.4nC/19nC) supports fast, controllable turn-off in hard-switched topologies.

The device integrates a co-packaged body diode with trr = 38–62ns and Qrr = 45–75nC, enabling efficient reverse recovery in synchronous buck and active clamp forward converters where diode conduction occurs during dead time.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 20V - Maximum drain-source blocking voltage; defines use in ≤20V input/output rail systems.
RDS(on) max 9.5mΩ @ VGS = 10V - Enables <1W conduction loss at 35A continuous drain current on standard PCB mount.
ID continuous 75A @ TC = 25°C - Supports high-current output stages when heatsinked via D-Pak drain pad.
Qg 19nC - Low gate drive energy requirement reduces controller loading and enables >1MHz switching in optimized layouts.
EAS 216mJ - Rated single-pulse avalanche energy ensures ruggedness against inductive switching transients without external snubbers.
RθJC 1.7°C/W - High thermal conductivity from junction to case enables direct copper pour attachment for thermal management.
tr/tf 98ns / 5.0ns - Fast switching transitions minimize overlap losses in synchronous rectifier operation.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions: 10.42 × 6.73 × 2.38 mm (L × W × H). Lead finish: matte tin.

Pin/Terminal Circuit Role Design Meaning
1 - GATE Control electrode High-impedance MOS gate requiring <3.2Ω series resistance to damp ringing; referenced to source.
2 - DRAIN Main current path (high-side or low-side) Internally connected to exposed metal pad; must be soldered to large copper area for thermal and current handling.
3 - SOURCE Reference node for gate drive and current return Serves as local ground reference for gate driver; carries full load current back to input/output capacitor.
4 - DRAIN Secondary drain connection Redundant drain terminal tied to same internal node as Pin 2; improves current sharing and thermal spreading.

Key Features

Feature Design Value
Ultra-low RDS(on) 9.5mΩ @ 10V enables <0.5W conduction loss at 23A in 12V input buck converter with 50% duty cycle.
Fully characterized avalanche 216mJ EAS rating verified per JEDEC JESD24-11 allows reliable operation under inductive fault conditions without derating.
Low Qgd/Qg ratio 6.4nC/19nC = 34% - Reduces Miller-induced turn-on risk and improves controllability in high-dV/dt environments.
100% RG tested Gate resistance measured and screened per unit - ensures consistent gate drive timing and eliminates outliers in production batches.
Optimized body diode trr = 38–62ns, Qrr = 45–75nC - Minimizes reverse recovery loss and EMI in synchronous rectifier mode.

Applications

Telecom DC-DC Converters Server CPU Voltage Regulators

Use Scenario: 48V-to-12V isolated half-bridge LLC converter with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode; commutated at 300–500kHz.

Use Value: Reduces conduction loss by >65% vs. 40V Schottky, enabling >95% efficiency at 60A output with 20°C lower FET temperature.

Use Scenario: Multiphase 3–1.0V buck converter supplying Intel Xeon processor core power.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) power stage switch operating at 500kHz–1MHz with 30–50ns dead time.

Use Value: 9.5mΩ RDS(on) limits I²R loss to <0.8W per phase at 35A, supporting compact thermal design with no forced air.

Industrial Motor Drive Inverters Automotive ADAS Power Supplies

Use Scenario: 24V three-phase inverter for BLDC fan control in HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch in 60kHz PWM-driven leg; conducts continuous 15–25A with peak 75A surge.

Use Value: 1.7°C/W RθJC allows direct copper pour mounting to aluminum chassis, eliminating discrete heatsinks.

Use Scenario: 12V-to-3.3V/5V buck converter powering radar sensor SoC in automotive ADAS ECU.

IC Role / Device Role / Timing Role: Primary power switch in AEC-Q101 qualified design; operates at 2MHz with tight EMI constraints.

Use Value: Low Qg (19nC) and fast tf (5ns) reduce switching loss and radiated emissions, easing CISPR-25 Class 5 compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF7470PBF 20V, 60A, SO-8 package, RDS(on) = 11.5mΩ, Qg = 15nC, RθJA = 62°C/W Limited to ≤30A continuous due to higher thermal resistance; unsuitable for >50A PCB-mount designs. Select for space-constrained, medium-current (<35A) applications where SO-8 assembly is preferred over D-Pak.
STL220N5LF8AG 20V, 120A, PowerFLAT 5x6 package, RDS(on) = 7.5mΩ, Qg = 24nC, RθJC = 1.2°C/W Lower RDS(on) but higher Qg; requires more aggressive gate drive and layout optimization. Choose for next-generation designs needing <7.5mΩ and superior thermal performance, accepting increased gate drive complexity.

Compared with IRFU3704, IRF7470PBF trades current capacity and thermal performance for smaller footprint, while STL220N5LF8AG delivers lower conduction loss and better thermal resistance at the cost of higher gate charge and stricter layout requirements.

Availability

IRFU3704 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFU3704 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRFU3704 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in telecom infrastructure, computing, and industrial automation systems.

FAQ

What is the maximum recommended PCB copper area for IRFU3704 thermal performance?

For optimal thermal performance, Infineon recommends a minimum 1" × 1" (25.4mm × 25.4mm) copper pour on FR-4 PCB connected to the D-Pak drain pad (Pins 2 and 4), with ≥2oz copper thickness and thermal vias to inner/ground planes. This achieves RθJA ≈ 50°C/W, enabling 62W dissipation at TA = 70°C.

Does IRFU3704 support 4.5V gate drive in logic-level applications?

Yes - IRFU3704 is specified down to VGS = 4.5V, with RDS(on) = 11mΩ max at that voltage and ID = 12A. It is suitable for 5V logic-level gate drivers, though full 75A rating requires ≥10V drive per datasheet absolute maximum ratings.

Is IRFU3704 qualified for automotive applications?

No - IRFU3704 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55°C to +175°C), but lacks automotive-specific stress testing, traceability, and PPAP documentation required for automotive ECUs or ADAS modules.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has VSD = 0.82–1.3V and trr = 38–62ns, which is slower and higher-VF than comparable Schottky diodes. However, its co-location with the MOSFET channel enables zero reverse recovery charge in synchronous rectifier mode when actively driven, eliminating diode conduction entirely.

IRFU3704 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1996 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU3704 FAQ

1.How can I place an order for IRFU3704 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3704 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3704 reliable?

The price and inventory of IRFU3704 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3704 is usually 5 days.

3.What payment methods are accepted for IRFU3704?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3704 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3704?

IRFU3704 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3704 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3704?

For technical support, including IRFU3704 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3704 requirements.

6.How does Aetrix verify that IRFU3704 is sourced from the original manufacturer or authorized distributors?

All IRFU3704 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3704 meets industry standards.

7.What is the process for return or replacement of IRFU3704?

All IRFU3704 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3704, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3704 part is unused and in its original packaging.

Return procedure for IRFU3704:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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