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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3708

Name: IRFU3708
Brand: Infineon Technologies
SKU: IRFU3708
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU3708

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3708.pdf

Description:: MOSFET N-CH 30V 61A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,766

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Product details

Overview

IRFU3708 from Infineon Technologies (formerly International Rectifier) is a 30V, 61A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12.5mΩ R_DS(on) at V_GS = 10V, 14.0mΩ at 4.5V, and supports 244A pulsed drain current - enabling efficient low-voltage, high-current power stages in telecom and industrial SMPS.

For engineers reviewing the IRFU3708 datasheet, IRFU3708 pinout, IRFU3708 application, or IRFU3708 equivalent, key selection criteria include its ultra-low gate charge (Q_g = 24nC), fast switching (t_r = 50ns, t_f = 3.7ns), robust avalanche rating (E_AS = 213mJ), and body diode performance (V_SD = 0.88V @ 31A, t_rr = 41ns).

Technical Context

This MOSFET employs planar silicon HEXFET technology with fully characterized unclamped inductive switching (UIS) capability and temperature-stable threshold voltage (V_GS(th) = 0.6–2.0V). Its low Crss (52pF) and Ciss (2417pF) support high dV/dt immunity and reduced Miller effect in hard-switched topologies.

The device is specified for operation from –55°C to +175°C junction temperature, with linear derating (0.58W/°C) above 70°C ambient. Thermal resistance R_θJC = 1.73°C/W enables direct heatsinking via the exposed drain pad in D-Pak mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage for 5V/12V input rails and synchronous rectifier applications
R_DS(on) @ 10V	12.5mΩ max - Enables <1.5W conduction loss at 61A DC, critical for high-efficiency buck and LLC secondaries
Q_g	24nC - Low gate drive energy reduces driver losses and simplifies gate driver selection (e.g., IR2110, UCC27531)
E_AS	213mJ - Withstands single-pulse inductive energy without failure, supporting reliable operation in flyback and forward converters
t_r/t_f	50ns / 3.7ns - Fast edge rates minimize switching transition losses in >500kHz DC-DC designs
V_SD @ 31A	0.88V typ - Low body diode forward drop improves light-load efficiency in synchronous rectification mode
R_θJC	1.73°C/W - Allows direct thermal coupling to heatsink or PCB copper, supporting >60W continuous dissipation with minimal ΔT

Pinout & Package

IRFU3708 uses the industry-standard D-Pak (TO-252AA) surface-mount package with an exposed drain pad for thermal and electrical connection. The three-terminal configuration supports compact, high-current PCB layouts with low-inductance source return paths.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed metal pad electrically connected to drain; must be soldered to large copper area for thermal management and low-impedance return
Source	Reference node for gate drive and current sensing	Low-inductance connection point for source resistor or shunt; defines local ground reference for gate driver supply
Gate	Control terminal for channel modulation	High-impedance input requiring controlled slew rate; sensitive to ringing due to low Q_gd/Q_gs ratio (5.8nC / 6.7nC)

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	14.0mΩ max - Enables full-rated conduction with 5V logic-level gate drive, eliminating level-shifting in 3.3V/5V controller systems
Fully characterized avalanche	IAS = 62A, EAS = 213mJ - Validated energy handling allows safe operation under transient overloads without external snubbers
Optimized body diode	t_rr = 41ns, Q_rr = 64nC - Minimizes reverse recovery loss and EMI in synchronous rectifier configurations
Lead-free and RoHS-compliant	IRFU3708PbF marking - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow profiles

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48V-to-12V isolated half-bridge converter in 1RU telecom shelf power supplies.

IC Role / Device Role: Synchronous rectifier on secondary side, replacing Schottky diodes to reduce conduction loss.

Use Value: Achieves >95% efficiency at full load by cutting diode conduction loss by ~60% versus 40V Schottky alternatives.

Use Scenario: 24V-input, 5V/60A output buck converter for PLC I/O modules.

IC Role / Device Role: High-side switch in multiphase VRM architecture with integrated gate driver feedback.

Use Value: Enables 60A continuous output using dual-phase layout with <1.2W per device conduction loss at 30A phase current.

Server Processor VRMs

LED Driver Power Stages

Use Scenario: 3-phase 12V input buck converter supplying 1.8V/120A to ASICs in edge server CPUs.

IC Role / Device Role: Low-side synchronous FET in interleaved topology with 1MHz switching frequency.

Use Value: Delivers sub-10mΩ effective on-resistance per phase while maintaining <10ns dead-time margin due to fast t_f.

Use Scenario: Constant-current 48V-to-24V step-down LED driver for high-bay industrial lighting.

IC Role / Device Role: Primary switch in fixed-frequency PWM dimming stage driving 10A LED strings.

Use Value: Supports 100% duty-cycle operation with stable R_DS(on) up to 150°C junction, ensuring consistent brightness across ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF06L	60V V_DS, 36A I_D, 18mΩ R_DS(on) @ 10V, TO-220 package	Higher voltage rating but lower current and larger footprint; lacks D-Pak thermal performance	Preferred only when 60V blocking is required and board space permits through-hole mounting
SiR872DP	30V V_DS, 60A I_D, 10.5mΩ R_DS(on) @ 10V, PowerPAK SO-8 package	Lower R_DS(on) but higher Q_g (34nC); smaller footprint but inferior thermal resistance (R_θJC = 2.5°C/W)	Chosen when PCB area is constrained and peak efficiency >96% justifies added gate drive complexity

Compared with STP36NF06L and SiR872DP, IRFU3708 offers the best balance of low R_DS(on), fast switching, and D-Pak thermal performance for high-current, surface-mount SMPS - making it optimal for space-constrained, thermally demanding telecom and industrial converters where reliability under sustained load is critical.

Availability

IRFU3708 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFU3708 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The IRFU3708 belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching power supplies in telecom infrastructure and industrial automation equipment.

FAQ

Is IRFU3708 suitable for 5V gate drive applications?

Yes - IRFU3708 is fully specified down to V_GS = 4.5V, with R_DS(on) ≤ 14.0mΩ at 12A. Its gate threshold voltage (0.6–2.0V) ensures strong turn-on with standard 5V microcontroller or PWM controller outputs, eliminating need for gate drivers in many low-frequency applications.

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to approximately 37A, calculated from the 51A rating at 70°C and linear derating factor of 0.58W/°C - assuming R_DS(on) remains stable and thermal interface resistance is ≤ 0.5°C/W.

Can IRFU3708 replace IRFZ44N in existing designs?

No - although both are N-channel MOSFETs, IRFZ44N has higher R_DS(on) (17.5mΩ), slower switching (t_r = 60ns), and different package (TO-220 vs. D-Pak). Direct replacement requires PCB footprint redesign and thermal validation; however, IRFU3708 offers measurable improvement in efficiency and power density where layout permits.

Does IRFU3708 have built-in ESD protection?

No - IRFU3708 does not integrate gate protection diodes. Per datasheet handling guidelines, gate-source voltage must remain within ±12V, and static discharge events exceeding ±200nA leakage limit can damage the oxide layer. Recommended practice includes series gate resistors and TVS clamping in high-noise environments.

IRFU3708 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3708 FAQ

1.How can I place an order for IRFU3708 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3708 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3708 reliable?

The price and inventory of IRFU3708 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3708 is usually 5 days.

3.What payment methods are accepted for IRFU3708?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3708 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3708?

IRFU3708 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3708 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3708?

For technical support, including IRFU3708 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3708 requirements.

6.How does Aetrix verify that IRFU3708 is sourced from the original manufacturer or authorized distributors?

All IRFU3708 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3708 meets industry standards.

7.What is the process for return or replacement of IRFU3708?

All IRFU3708 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3708, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3708 part is unused and in its original packaging.

Return procedure for IRFU3708:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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