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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3711

Name: IRFU3711
Brand: Infineon Technologies
SKU: IRFU3711
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU3711

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3711.pdf

Description:: MOSFET N-CH 20V 100A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,996

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Product details

Overview

IRFU3711 from Infineon Technologies is a 20V N-channel D-Pak (TO-252AA) HEXFET Power MOSFET optimized for high-frequency synchronous buck converters and isolated DC-DC converters, featuring 6.5 mΩ R_DS(on) at V_GS = 4.5 V, 110 A continuous drain current at T_C = 25°C, and fully characterized avalanche capability - deployed in telecom server VRMs and industrial power supplies.

For engineers reviewing the IRFU3711 datasheet, IRFU3711 pinout, IRFU3711 application, or IRFU3711 equivalent, key selection criteria include low gate resistance (0.3–2.5 Ω), ultra-low R_DS(on) at 4.5 V, capacitive-induced turn-on immunity, and 100% R_G tested reliability for synchronous rectification in high-efficiency SMPS designs.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with an integral fast-recovery body diode (t_rr = 48–72 ns, Q_rr = 65–98 nC), enabling robust unclamped inductive switching and synchronous FET operation without external anti-parallel diodes. Its gate threshold voltage (1.0–3.0 V) and low input capacitance (C_iss = 2980 pF) support direct drive from low-voltage PWM controllers.

The device is characterized for stable operation across −55°C to +150°C junction temperature, with linear derating (2.5 W/°C above 25°C case temp) and thermal resistance R_θJC = 1.04°C/W - critical for thermally constrained board layouts in high-density power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters
R_DS(on) @ 4.5 V	6.5 mΩ max - enables <1 W conduction loss at 40 A, reducing thermal load in compact VRMs
I_D @ T_C = 25°C	110 A - supports high-current CPU/GPU core power delivery with minimal parallel devices
Q_g	29–44 nC - low total gate charge minimizes driver power and switching losses at >500 kHz frequencies
R_G	0.3–2.5 Ω - ultra-low intrinsic gate resistance improves EMI behavior and reduces gate ringing risk
t_rr / Q_rr	48–72 ns / 65–98 nC - fast, predictable body diode recovery enables reliable synchronous rectification without shoot-through
E_AS	460 mJ - single-pulse avalanche energy rating validates ruggedness under inductive fault conditions

Pinout & Package

IRFU3711 uses the JEDEC TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. The 4-pin configuration features dual drain connections for current sharing and reduced source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; low R_G (0.3–2.5 Ω) ensures fast, dV/dt-immune switching with minimal gate driver stress
2	Drain	Main high-side power path; electrically connected to exposed copper tab for low R_θJC (1.04°C/W)
3	Source	Reference node for gate drive and current sensing; low-inductance layout critical for synchronous FET stability
4	Drain	Second drain connection - paralleled with Pin 2 to halve effective drain-source loop inductance

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	6.5 mΩ max enables direct drive from 5 V or 3.3 V controllers without level-shifting
Fully characterized avalanche	460 mJ E_AS and 120 A I_AR validated per JEDEC JESD24-1 - no derating needed for inductive transients
Capacitive-induced turn-on immunity	Guaranteed immunity to parasitic dv/dt-induced turn-on in high-side configurations up to 100 V/ns
100% R_G tested	Every unit screened for gate resistance (0.3–2.5 Ω), ensuring consistent switching timing and driver compatibility
Fast body diode recovery	t_rr = 48–72 ns with soft recovery profile - eliminates need for external Schottky catch diodes in sync-buck topologies

Applications

Telecom Server VRM

Industrial Isolated DC-DC

Use Scenario: Point-of-load regulation for 48 V input telecom rectifiers supplying 0.8–1.8 V to ASICs and FPGAs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in secondary-side synchronous buck stage operating at 300–600 kHz.

Use Value: 6.5 mΩ R_DS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 12 V gate-drive MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Secondary-side synchronous rectification in 1 kW industrial flyback or forward converters with 24–48 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in isolated 24 V output stage.

Use Value: Body diode t_rr ≤72 ns prevents reverse recovery spikes during hard commutation, eliminating snubber circuits and reducing EMI filter size.

High-Frequency Buck Converter

Automotive ADAS Power Supply

Use Scenario: Core power supply for GPU or AI accelerator modules requiring 50–100 A at 0.9–1.2 V with <1% ripple.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) high-side switch in multiphase buck converter with 1 MHz+ switching frequency.

Use Value: Q_g = 29–44 nC and C_iss = 2980 pF enable clean 1.2 V gate drive with minimal overshoot, supporting tight duty-cycle control down to 5%.

Use Scenario: Power management for radar and camera modules in automotive ADAS systems with strict AEC-Q101 compliance requirements.

IC Role / Device Role / Timing Role: Primary-side switching FET in 12 V input buck converter delivering 3.3 V/5 V to SoCs and sensors.

Use Value: −55°C to +150°C T_J range and 100% R_G test ensure startup reliability at cold cranking (−40°C ambient) and sustained operation under hood temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3711PbF	Same die, but in smaller I-Pak (TO-220AB) package; R_θJA = 62°C/W vs. 50°C/W for IRFU3711	Limited to lower-power applications (<60 A continuous) due to higher thermal resistance and no exposed drain pad	Select when through-hole mounting or legacy footprint compatibility is required over thermal performance
SiR872DP	25 V rated, 4.5 mΩ R_DS(on) @ 4.5 V, but higher Q_g (52 nC); uses trench MOSFET process	Better conduction loss at light loads, but slower switching and higher gate drive loss above 300 kHz	Prefer for efficiency-critical, lower-frequency (<250 kHz) industrial supplies where R_DS(on) dominates losses

Compared with IRLR3711PbF and SiR872DP, IRFU3711 delivers optimal balance of low R_DS(on), low Q_g, and superior thermal performance in surface-mount high-frequency SMPS - making it the preferred choice for space-constrained, high-efficiency telecom and computing power stages.

Availability

IRFU3711 is available at Aetrix Electronics and suitable for telecom server VRMs, industrial isolated DC-DC converters, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFU3711 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRFU3711 belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in data center, telecom, and industrial infrastructure applications.

FAQ

Is IRFU3711 suitable for 3.3 V gate drive?

Yes - its gate threshold voltage (1.0–3.0 V) and guaranteed R_DS(on) of 6.5 mΩ at V_GS = 4.5 V make it compatible with 3.3 V logic-level drivers when operated within its safe SOA limits. At 3.3 V, R_DS(on) increases to ~10 mΩ, requiring thermal verification for target current levels.

What is the maximum recommended switching frequency for IRFU3711?

IRFU3711 is characterized for reliable operation up to 1 MHz in synchronous buck topologies. Its 29–44 nC Q_g, 8.9 nC Q_gd, and low R_G support clean transitions at high frequencies, though practical limits depend on PCB layout, driver strength, and thermal management - typical use is 300–600 kHz in telecom VRMs.

Does IRFU3711 require a gate resistor for stability?

A small gate resistor (1–5 Ω) is recommended to dampen potential gate oscillation caused by PCB trace inductance interacting with C_iss and C_rss. While not mandatory due to ultra-low intrinsic R_G, a 2.2 Ω resistor improves EMI performance and ensures robust turn-on/turn-off timing across temperature and process variation.

Can IRFU3711 replace IRFR3711 in existing designs?

Yes - IRFU3711 and IRFR3711 share identical electrical specifications, die, and pinout, differing only in package: IRFU3711 is D-Pak (TO-252AA), IRFR3711 is I-Pak (TO-220AB). Footprint and thermal design must be updated, but schematic and gate drive circuitry remain unchanged.

IRFU3711 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3711 FAQ

1.How can I place an order for IRFU3711 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3711 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3711 reliable?

The price and inventory of IRFU3711 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3711 is usually 5 days.

3.What payment methods are accepted for IRFU3711?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3711 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3711?

IRFU3711 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3711 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3711?

For technical support, including IRFU3711 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3711 requirements.

6.How does Aetrix verify that IRFU3711 is sourced from the original manufacturer or authorized distributors?

All IRFU3711 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3711 meets industry standards.

7.What is the process for return or replacement of IRFU3711?

All IRFU3711 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3711, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3711 part is unused and in its original packaging.

Return procedure for IRFU3711:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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