Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU3711ZPBF

Name: IRFU3711ZPBF
Brand: Infineon Technologies
SKU: IRFU3711ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFU3711ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU3711ZPBF.pdf

Description:: MOSFET N-CH 20V 93A IPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,598

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFU3711ZPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 39 A N-channel DPAK-packaged Power MOSFET optimized for high-frequency synchronous buck converters in CPU core power delivery and telecom DC-DC modules. It features 4.5 mΩ R_DS(on) at V_GS = 4.5 V, 18 nC total gate charge, and fully characterized avalanche capability up to 140 mJ.

For engineers reviewing the IRFU3711ZPBF datasheet, IRFU3711ZPBF pinout, IRFU3711ZPBF application, or IRFU3711ZPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V logic-level), ultra-low R_DS(on) at 4.5 V, gate charge profile for hard-switched synchronous rectification, and thermal performance in surface-mount PCB layouts with limited copper area.

Technical Context

This HEXFET device uses planar vertical DMOS architecture with optimized cell pitch and trench-assisted source metallization to achieve sub-5 mΩ on-resistance at 4.5 V gate drive while maintaining robust 20 V breakdown voltage. Its gate charge distribution (Q_gs2 = 1.8 nC, Q_gd = 6.5 nC) supports fast switching with controlled dV/dt immunity in synchronous FET positions.

The integrated body diode exhibits 19 ns reverse recovery time and 9.4 nC Q_rr, enabling efficient operation in hard-commutated topologies without external Schottky assistance. Thermal resistance R_θJC = 1.9 °C/W enables direct heatsinking through the exposed drain pad in DPAK packages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V input rails with margin for transient overshoot in point-of-load converters
R_DS(on) @ 4.5 V	4.5 mΩ max - Enables <1 W conduction loss at 15 A DC load current in compact PCB footprints
Q_g	18 nC typ - Determines gate driver current requirement (~1.8 A peak for 10 ns rise time)
I_D @ T_C = 25°C	39 A continuous - Sustains high pulsed currents in CPU transient response without derating
E_AS	140 mJ single-pulse - Withstands unclamped inductive energy during startup/fault in synchronous buck stages
R_θJC	1.9 °C/W - Allows direct thermal path to heatsink or copper pour, critical for >1 MHz operation
Q_rr	9.4 nC typ - Minimizes cross-conduction losses and EMI in synchronous rectifier mode

Pinout & Package

IRFU3711ZPBF is housed in a lead-free DPAK (TO-252AA) package with an exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current source-drain paths with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives logic-level gate drive; low input capacitance (C_iss = 2160 pF) reduces driver loading
2 (Drain)	Power output terminal	Exposed metal pad - electrically and thermally connected to internal die drain; requires solder mask defined thermal pad
3 (Source)	Reference node	Common return path for load current and gate drive reference; low-inductance layout essential for stability

Key Features

Feature	Design Value
Logic-level gate drive	Specified R_DS(on) ≤ 5.7 mΩ at V_GS = 4.5 V - eliminates need for level-shifting gate drivers in 5 V/3.3 V control systems
Ultra-low gate impedance	Q_gd/Q_gs2 ratio = 3.6 - suppresses C_dv/dt turn-on risk in high-dV/dt synchronous FET applications
Characterized avalanche	E_AS = 140 mJ at T_J = 25°C - enables reliable operation under inductive switching stress without external snubbers
Optimized body diode	t_rr = 19 ns, Q_rr = 9.4 nC - reduces shoot-through and switching loss in discontinuous conduction mode (DCM)

Applications

Server VRM Core Power Stage

Telecom Isolated DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying Intel/AMD CPU cores with dynamic load steps up to 300 A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 500 kHz–1 MHz with 4.5 V gate drive from multiphase controller.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V minimizes conduction loss during heavy load; low Q_g enables fast switching with minimal driver overhead.

Use Scenario: Secondary-side synchronous rectification in 48 V input isolated forward or LLC converter for 12 V/24 V telecom systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in high-efficiency 500 W DC-DC module.

Use Value: 140 mJ E_AS withstands transformer leakage inductance spikes; 19 ns t_rr prevents reverse recovery oscillation at 300 kHz switching.

Industrial PLC I/O Power Supply

Automotive ADAS Domain Controller PMIC

Use Scenario: Compact 24 V input buck regulator powering FPGA, memory, and analog circuitry in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary power switch in 300 kHz fixed-frequency buck stage with overcurrent protection.

Use Value: R_θJC = 1.9 °C/W allows direct thermal coupling to chassis; 20 V V_DS rating accommodates 24 V transients per ISO 16750-2.

Use Scenario: Point-of-load regulation for radar processor SoCs requiring tight voltage tolerance and low noise in 12 V automotive battery systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in dual-phase buck converter with adaptive gate drive timing.

Use Value: Fully characterized avalanche ensures reliability during load dump events; Q_rr < 10 nC avoids cross-conduction in phase-interleaved operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 5.0 mΩ @ 4.5 V; Q_g = 15 nC; lower E_AS (100 mJ)	Suitable for lower-power buck stages (<20 A) where gate drive current is constrained	Prefer when minimizing gate driver power loss is prioritized over avalanche ruggedness
SI7850DP-T1-GE3	R_DS(on) = 4.2 mΩ @ 4.5 V; Q_g = 22 nC; SO-8 package (higher R_θJA)	Better on-resistance but higher gate charge and inferior thermal performance in high-current designs	Select only if board space is extremely limited and thermal budget permits higher junction temperature

Compared with IRL3713PBF and SI7850DP-T1-GE3, IRFU3711ZPBF delivers the best balance of low R_DS(on), moderate Q_g, and industry-leading avalanche energy-making it optimal for high-reliability, high-current synchronous rectifier roles where both efficiency and fault tolerance matter.

Availability

IRFU3711ZPBF is available at Aetrix Electronics and suitable for server VRM core power stages, telecom isolated DC-DC converters, and industrial PLC I/O power supplies requiring stable component supply across extended production lifecycles.

Supply support for IRFU3711ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRFU3711ZPBF belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFU3711ZPBF supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and must be validated against actual PCB copper area and airflow in the target application.

Does this MOSFET require a gate resistor for safe operation in synchronous buck topologies?

Yes-a gate resistor (typically 2–10 Ω) is required to dampen ringing and control dV/dt during switching transitions. The device's low gate impedance and 6.5 nC Q_gd make it susceptible to parasitic oscillation without proper gate network design, especially when driving high di/dt loads.

Can IRFU3711ZPBF be used as a high-side switch with bootstrap gate drive?

No-it is not rated for high-side operation with bootstrap circuits due to insufficient V_GS rating (±20 V) and lack of built-in level-shift capability. Its design targets low-side synchronous rectification where gate drive referenced to source is straightforward and robust.

Is the body diode suitable for freewheeling in discontinuous conduction mode (DCM)?

Yes-the body diode has characterized t_rr = 19 ns and Q_rr = 9.4 nC, making it viable for DCM freewheeling in buck converters up to ~1 MHz. However, its forward voltage (V_SD ≈ 1.0 V) is higher than Schottky alternatives, so conduction loss must be evaluated against switching loss trade-offs.

IRFU3711ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU3711ZPBF FAQ

1.How can I place an order for IRFU3711ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3711ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3711ZPBF reliable?

The price and inventory of IRFU3711ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3711ZPBF is usually 5 days.

3.What payment methods are accepted for IRFU3711ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3711ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3711ZPBF?

IRFU3711ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3711ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3711ZPBF?

For technical support, including IRFU3711ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3711ZPBF requirements.

6.How does Aetrix verify that IRFU3711ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFU3711ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3711ZPBF meets industry standards.

7.What is the process for return or replacement of IRFU3711ZPBF?

All IRFU3711ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3711ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3711ZPBF part is unused and in its original packaging.

Return procedure for IRFU3711ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…