Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFU3910

Part No.:
IRFU3910
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU3910.pdf
Description:
MOSFET N-CH 100V 16A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,341

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFU3910 from Infineon (formerly International Rectifier) is a 100V, 16A N-channel enhancement-mode power MOSFET in TO-251AA (IPAK) through-hole package, featuring RDS(on) = 0.115Ω @ VGS = 10V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IRFU3910 datasheet, IRFU3910 pinout, IRFU3910 application, or IRFU3910 equivalent, key selection criteria include its 100V VDS, 0.115Ω on-resistance at 10V gate drive, 60A pulsed drain rating, 1.9°C/W junction-to-case thermal resistance, and robust unclamped inductive switching capability up to 150mJ.

Technical Context

This fifth-generation HEXFET device uses advanced planar processing to minimize conduction loss while maintaining fast switching (tr = 27ns, tf = 25ns) and low gate charge (Qg = 44nC). Its body diode exhibits trr = 130–190ns and Qrr = 650–970nC under 100A/µs di/dt.

The IRFU3910 operates across –55°C to +175°C junction temperature range, supports ±20V gate drive, and delivers linear derating of 0.53W/°C above 25°C case temperature-enabling reliable operation in thermally constrained industrial power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and half-bridge drivers.
RDS(on)0.115Ω @ VGS = 10V - Conduction loss of ≤1.04W at 3A continuous drain current; enables compact heatsink design in 12–48V systems.
ID (TC = 25°C)16A - Continuous current capability with adequate PCB copper area and airflow; validated per JEDEC JESD51-2 thermal test conditions.
EAS150mJ - Single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without external snubbers.
Qg44nC - Total gate charge determines driver strength requirement; compatible with standard 1A peak gate drivers at ≤100kHz switching.
RθJC1.9°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink for >50W dissipation with <100°C temperature rise.
tr/tf27ns/25ns - Rise/fall times measured at VDD = 50V, ID = 9A, RG = 12Ω; defines minimum practical switching period for hard-switched topologies.

Pinout & Package

IRFU3910 is housed in TO-251AA (IPAK), a through-hole variant of the D-PAK family with straight leads for vertical PCB mounting. The package features exposed drain pad for thermal conduction and mechanical stability.

Pin/TerminalCircuit RoleDesign Meaning
1 - GateControl electrodeReceives 10V logic-level gate drive; requires <44nC charge for full enhancement; sensitive to ESD (±20V absolute max).
2 - DrainHigh-side power terminalConnected to load/bus side; electrically tied to exposed metal tab; primary heat path to heatsink or chassis.
3 - SourcePower return/reference nodeServes as local ground reference for gate drive; carries full load current; must be low-inductance connection to minimize switching noise.
4 - Drain (Tab)Secondary drain connectionInternally bonded to Pin 2; provides redundant current path and enhanced thermal transfer via soldered tab interface.

Key Features

FeatureDesign Value
Fully avalanche-rated150mJ single-pulse energy tolerance eliminates need for external clamping in inductive load switching (e.g., solenoid drivers).
Ultra-low RDS(on)0.115Ω at 10V ensures <1.2W conduction loss at 10A, reducing thermal stress in space-constrained 48V industrial controls.
Fast switching speed27ns rise / 25ns fall time enables efficient operation up to 200kHz in SMPS, minimizing dead-time losses in synchronous rectifiers.
High-temperature operationJunction rated to +175°C supports deployment in engine bay modules, motor drives, and sealed enclosures without forced cooling.
Low gate charge44nC total charge reduces gate driver power consumption and simplifies isolation requirements in high-side configurations.

Applications

Brushless DC Motor ControlIndustrial DC-DC Converters

Use Scenario: Driving 24–48V BLDC motors in HVAC blowers and conveyor systems with trapezoidal commutation.

IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase inverter leg; handles 12A RMS phase current with <1% duty-cycle dead time.

Use Value: 0.115Ω RDS(on) limits conduction loss to ≤1.6W per FET at full load, enabling natural convection cooling in IP54-rated enclosures.

Use Scenario: Primary-side switch in isolated 400W flyback or forward converter for PLC power supplies.

IC Role / Device Role / Timing Role: Main switching element operating at 65kHz with 50% duty cycle; withstands reflected output voltage spikes.

Use Value: 150mJ avalanche rating absorbs leakage inductance energy without failure, eliminating need for RCD snubber components.

Automotive Body Control ModulesLED Driver Power Stages

Use Scenario: Load switching for headlights, fog lamps, and heated mirrors in 12V vehicle electrical systems.

IC Role / Device Role / Timing Role: High-side power switch controlled by microcontroller GPIO; handles inrush current of halogen bulbs (up to 10× steady-state).

Use Value: 60A pulsed drain rating accommodates 8A cold filament surge for 100ms, preventing false overcurrent shutdown in BCM firmware.

Use Scenario: Constant-current switching stage in 100W architectural LED drivers with PWM dimming.

IC Role / Device Role / Timing Role: Series pass element modulating current through 30–50V LED strings at 1–10kHz PWM frequency.

Use Value: Low Qg (44nC) and fast tf (25ns) minimize switching loss during dimming transitions, preserving >92% system efficiency at 10% brightness.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP16NF10VDS = 100V, RDS(on) = 0.12Ω, Qg = 42nC, TO-220 packageLarger footprint and higher RθJA (62°C/W); requires larger heatsink in same ambientPreferred where board space permits and legacy TO-220 mounting is standardized.
IXTP16N10PVDS = 100V, RDS(on) = 0.105Ω, Qg = 48nC, TO-220 packageLower RDS(on) but higher gate charge; avalanche rating not specified in datasheetSelected when minimal conduction loss dominates over switching loss and avalanche robustness is secondary.

Compared with STP16NF10 and IXTP16N10P, the IRFU3910 offers superior thermal performance via TO-251AA's lower RθJC (1.9°C/W vs. ≥2.5°C/W), tighter gate charge consistency, and documented 150mJ avalanche capability-critical for unclamped inductive loads in cost-sensitive industrial designs.

Availability

IRFU3910 is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and automotive body control modules requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for IRFU3910 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.

The IRFU3910 belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-reliability industrial and automotive power conversion where ruggedness, thermal efficiency, and avalanche tolerance are mandatory.

FAQ

Is IRFU3910 suitable for logic-level gate drive?

No. IRFU3910 has a gate threshold voltage range of 2.0–4.0V and is specified for RDS(on) at VGS = 10V. It is not a logic-level MOSFET and requires a dedicated 10V gate driver; operation at 3.3V or 5V will result in incomplete enhancement and excessive conduction loss.

What is the maximum recommended PCB copper area for TO-251AA thermal relief?

Per AN-994, a minimum 1.0" × 1.0" (25.4mm × 25.4mm) copper pour on the drain-connected layer, with ≥4 thermal vias (0.3mm diameter) connecting to inner ground planes, achieves RθJA ≈ 50°C/W. Larger areas further reduce thermal resistance but require mechanical reinforcement for through-hole reliability.

Does IRFU3910 have integrated ESD protection on the gate?

No. The device lacks on-chip gate protection diodes. External 10kΩ series gate resistor and 12V Zener clamp between gate and source are required to prevent ESD damage during handling and PCB assembly, especially in automated SMT environments.

Can IRFU3910 replace IRFZ44N in existing designs?

Yes, with caveats: both are 55V-rated N-channel MOSFETs, but IRFU3910 is 100V-rated with higher RDS(on) (0.115Ω vs. 0.028Ω). It is not a drop-in replacement for 55V applications unless voltage headroom and thermal margin are verified; however, it provides superior avalanche ruggedness and temperature stability.

IRFU3910 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
640 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU3910 FAQ

1.How can I place an order for IRFU3910 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU3910 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU3910 reliable?

The price and inventory of IRFU3910 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU3910 is usually 5 days.

3.What payment methods are accepted for IRFU3910?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU3910 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU3910?

IRFU3910 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU3910 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU3910?

For technical support, including IRFU3910 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU3910 requirements.

6.How does Aetrix verify that IRFU3910 is sourced from the original manufacturer or authorized distributors?

All IRFU3910 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU3910 meets industry standards.

7.What is the process for return or replacement of IRFU3910?

All IRFU3910 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU3910, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU3910 part is unused and in its original packaging.

Return procedure for IRFU3910:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFU3910 Tags

  • IRFU3910
  • IRFU3910 PDF
  • IRFU3910 Datasheet
  • IRFU3910 Specifications
  • IRFU3910 Images
  • Infineon Technologies
  • Infineon Technologies IRFU3910
  • Buy IRFU3910
  • IRFU3910 Price
  • IRFU3910 Distributor
  • IRFU3910 Supplier
  • IRFU3910 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER