Infineon Technologies IRFU4105
- Part No.:
- IRFU4105
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU4105.pdf
- Description:
- MOSFET N-CH 55V 27A IPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,700
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Product details
Overview
IRFU4105 from International Rectifier is a 55 V, 27 A (TC = 25°C), ultra-low RDS(on) = 45 mΩ N-channel enhancement-mode power MOSFET in TO-251AA (I-PAK) through-hole package, fully avalanche-rated and optimized for high-efficiency DC-DC converters, motor control, and industrial power switching.
For engineers reviewing the IRFU4105 datasheet, IRFU4105 pinout, IRFU4105 application, or IRFU4105 equivalent, key selection criteria include its 55 V V(BR)DSS, 45 mΩ RDS(on) at VGS = 10 V, 100 A pulsed drain capability, fast 49 ns rise time, and rugged unclamped inductive switching performance up to 65 mJ single-pulse avalanche energy.
Technical Context
This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining fast switching (tr = 49 ns, tf = 40 ns) and robust safe operating area (SOA) across temperature. Its gate charge profile (Qg = 34 nC, Qgd = 14 nC) supports efficient hard-switching in 100–500 kHz power stages.
The integrated body diode exhibits low VSD = 1.6 V at IS = 16 A and fast reverse recovery (trr = 57–86 ns, Qrr = 130–200 nC), enabling reliable synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems. |
| RDS(on) | 45 mΩ @ VGS = 10 V - Directly determines I²R conduction loss; enables ≤1.5 W dissipation at 16 A continuous. |
| ID (TC = 25°C) | 27 A - Continuous current rating under ideal heatsinking; defines thermal design baseline for PCB-mount applications. |
| EAS | 65 mJ - Single-pulse avalanche energy handling; allows safe operation during inductive turn-off transients without snubbers. |
| Qg | 34 nC - Total gate charge; determines driver strength requirement and switching loss trade-off in PWM control. |
| tr/tf | 49/40 ns - Rise/fall times at VDD = 28 V, ID = 16 A; enables high-frequency operation with minimal overlap loss. |
| VSD | 1.6 V @ IS = 16 A - Forward voltage of intrinsic body diode; impacts freewheeling efficiency and thermal stress in non-synchronous designs. |
Pinout & Package
IRFU4105 uses the TO-251AA (I-PAK) three-lead through-hole package with internal leadframe geometry optimized for mechanical stability and thermal transfer to PCB copper. The package features isolated mounting hole and standard 0.1" lead pitch compatible with legacy through-hole assembly lines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Source) | Source terminal (S) | Common return path for load current; electrically tied to exposed die substrate; primary thermal conduction path to PCB ground plane. |
| Lead 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <34 nC charge; sensitive to ESD; must be driven with low-inductance path to minimize ringing. |
| Lead 3 (Drain) | Power output (D) | Main high-side or low-side switching node; connects to load/bus; carries full switched current and withstands 55 V transient spikes. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated | 65 mJ single-pulse and 6.8 mJ repetitive avalanche energy - eliminates need for external clamping in inductive load switching. |
| Ultra-low RDS(on) | 45 mΩ @ 10 V - reduces conduction loss by >30% vs. prior-gen 55 V MOSFETs, improving efficiency in 12–48 V power supplies. |
| Fast switching | 49 ns rise / 40 ns fall time - enables higher PWM frequencies (>300 kHz) while maintaining low switching loss. |
| Robust body diode | 1.6 V VSD, 57 ns trr - supports reliable freewheeling in non-synchronous buck converters without external diode. |
| TO-251AA through-hole | Standard 0.1" lead pitch, isolated mounting hole - ensures mechanical reliability in vibration-prone industrial environments. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial control modules. IC Role / Device Role / Timing Role: Low-side synchronous switch in fixed-frequency 250 kHz buck converter. Use Value: 45 mΩ RDS(on) limits conduction loss to <2.3 W at 16 A, reducing heatsink size by 40% vs. 75 mΩ alternatives. | Use Scenario: H-bridge drive for 24 V, 15 A brushed motors in automated gate actuators. IC Role / Device Role / Timing Role: High-side and low-side quadrant switch with bidirectional current handling. Use Value: Fully rated 100 A pulsed current and 65 mJ avalanche energy prevent failure during motor stall or reversal transients. |
| Industrial Power Supply | LED Constant-Current Driver |
Use Scenario: Primary-side switching in 300 W AC-DC front-end with active PFC stage. IC Role / Device Role / Timing Role: Fast-switching low-side switch in boost PFC controller with 100 kHz operation. Use Value: 34 nC Qg and 14 nC Qgd enable clean gate drive with standard 2 A peak drivers, minimizing Miller-induced shoot-through risk. | Use Scenario: Dimmable constant-current sink for high-brightness LED strings in street lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator in linear+switching hybrid topology. Use Value: 1.6 V body diode forward drop ensures stable current regulation during PWM off-time without added Schottky losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V V(BR)DSS, 50 mΩ RDS(on), TO-220 package | Higher voltage margin but larger footprint and higher conduction loss | Preferred where 60 V system margin is critical and board space permits TO-220 mounting. |
| IXTP12N50D2 | 500 V V(BR)DSS, 0.45 Ω RDS(on), TO-220 package | Designed for high-voltage flyback, not optimized for 48 V low-RDS(on) switching | Only suitable if system requires >400 V blocking; otherwise excessive conduction loss at 24–48 V. |
Compared with STP55NF06L and IXTP12N50D2, IRFU4105 delivers optimal balance of low RDS(on), compact TO-251AA form factor, and proven avalanche ruggedness for 24–48 V industrial switching-making it superior for space-constrained, thermally demanding applications where 55 V rating is sufficient.
Availability
IRFU4105 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED lighting systems requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFU4105 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET and IGBT design, specializing in high-efficiency power semiconductors for industrial, automotive, and computing applications.
The HEXFET® product line-of which IRFU4105 is a fifth-generation member-was engineered specifically for high-current, high-reliability switching in 12–48 V power conversion systems where thermal robustness and avalanche tolerance are mandatory.
FAQ
What is the maximum continuous drain current for IRFU4105 at 100°C case temperature?
The maximum continuous drain current for IRFU4105 at TC = 100°C is 19 A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-251AA package and must be applied when ambient or heatsink conditions elevate case temperature above 25°C.
Can IRFU4105 be used in synchronous rectification configurations?
No-IRFU4105 is an N-channel MOSFET intended for active switching, not synchronous rectification. Its body diode is optimized for freewheeling, not reverse conduction control. For synchronous rectification, a dedicated logic-level N-channel MOSFET with lower VGS(th) and enhanced diode characteristics (e.g., IRFR3707) is required.
Is IRFU4105 lead-free and RoHS compliant?
Yes-IRFU4105PbF is explicitly marked as lead-free (PbF suffix) and complies with EU RoHS Directive 2011/65/EU. The "P" in the assembly code (e.g., 916A) confirms lead-free termination plating, and soldering is qualified for 300°C for 10 seconds per JEDEC J-STD-020.
What is the recommended gate resistor value for hard-switching at 250 kHz?
A 10–18 Ω gate resistor is recommended for 250 kHz hard-switching with IRFU4105. This range balances switching speed (minimizing tr/tf) against gate drive overshoot and ringing, based on measured test data using RG = 18 Ω in the datasheet's Figure 10 and 13 waveforms.
IRFU4105 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU4105 FAQ
1.How can I place an order for IRFU4105 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU4105 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU4105 reliable?
The price and inventory of IRFU4105 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105 is usually 5 days.
3.What payment methods are accepted for IRFU4105?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU4105?
IRFU4105 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU4105 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU4105?
For technical support, including IRFU4105 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105 requirements.
6.How does Aetrix verify that IRFU4105 is sourced from the original manufacturer or authorized distributors?
All IRFU4105 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105 meets industry standards.
7.What is the process for return or replacement of IRFU4105?
All IRFU4105 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU4105 part is unused and in its original packaging.
Return procedure for IRFU4105:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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