Infineon Technologies IRFU4105PBF
- Part No.:
- IRFU4105PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU4105PBF.pdf
- Description:
- MOSFET N-CH 55V 27A IPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,501
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Product details
Overview
IRFU4105PBF from International Rectifier is a 55 V, 27 A N-channel enhancement-mode power MOSFET in TO-251AA (I-PAK) through-hole package, featuring 45 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for DC-DC converters, motor control, and power supply switching stages.
For engineers reviewing the IRFU4105PBF datasheet, IRFU4105PBF pinout, IRFU4105PBF application, or IRFU4105PBF equivalent, key selection criteria include its 55 V VDS, 45 mΩ on-resistance, 100 A pulsed drain capability, fast 49 ns rise time, and rugged unclamped inductive switching performance up to 65 mJ single-pulse avalanche energy.
Technical Context
This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining high-speed switching (tr = 49 ns, tf = 40 ns) and robust safe operating area (SOA) across temperature. Its gate charge profile (Qg = 34 nC, Qgd = 14 nC) supports efficient drive with standard gate drivers.
The integrated body diode exhibits 1.6 V forward voltage at 16 A and 57–86 ns reverse recovery time (trr), enabling synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage compatible with 48 V industrial bus and 36 V automotive systems |
| RDS(on) | 45 mΩ @ VGS = 10 V - Enables ≤1.2 W conduction loss at 16 A continuous current |
| ID (TC = 25°C) | 27 A - Continuous current rating under heatsink-cooled conditions |
| EAS | 65 mJ - Single-pulse avalanche energy tolerance supports reliable unclamped inductive turn-off |
| Qg | 34 nC - Total gate charge determines required driver peak current and switching loss trade-off |
| tr/tf | 49/40 ns - Fast edge rates reduce switching transition time and associated losses |
| Ciss/Coss | 700/240 pF - Input/output capacitance values inform snubber design and resonant behavior in hard-switched circuits |
Pinout & Package
IRFU4105PBF is housed in a TO-251AA (I-PAK) three-lead through-hole package with gull-wing leads. The case is electrically connected to the drain terminal, requiring isolation from heatsink unless drain is at system ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Source) | Source terminal of N-channel MOSFET | Low-side reference node; connects to load return or ground; carries full load current |
| Lead 2 (Gate) | Control electrode | High-impedance input requiring <34 nC charge for full enhancement; sensitive to ESD |
| Lead 3 (Drain) | Power output terminal | Internally bonded to metal tab; must be isolated from heatsink unless drain is grounded |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 65 mJ single-pulse and 6.8 mJ repetitive avalanche energy withstand - eliminates need for external clamping in inductive load switching |
| Ultra-low RDS(on) | 45 mΩ at 10 V gate drive - reduces conduction loss by >30% vs. prior-gen equivalents at same current density |
| Fast switching speed | 7 ns turn-on delay + 49 ns rise time - enables operation up to 500 kHz in SMPS designs with minimal overlap loss |
| Robust body diode | 1.6 V VSD at 16 A, 57 ns trr - supports bidirectional current flow in H-bridge motor drives without external diodes |
| Lead-free construction | Pb-free plating per JEDEC J-STD-609 - compliant with RoHS Directive 2011/65/EU and IPC-1752A reporting requirements |
Applications
| DC-DC Converters | Brushed DC Motor Control |
|---|---|
Use Scenario: Synchronous buck converter in 12–48 V industrial power supplies delivering up to 20 A output. IC Role / Device Role / Timing Role: Low-side switch handling continuous 27 A current with minimal conduction loss and fast commutation. Use Value: 45 mΩ RDS(on) limits I²R loss to 1.2 W at 16 A, improving efficiency over 92% at full load. | Use Scenario: Half-bridge driver for 24 V brushed motors in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: High-current, low-voltage switching element controlling direction and PWM duty cycle. Use Value: Fully rated 100 A pulsed drain current handles motor stall surges; 65 mJ avalanche energy prevents failure during abrupt stop events. |
| AC-DC PFC Stages | Industrial Power Distribution |
Use Scenario: Boost switch in active PFC front-end for 500 W server PSUs operating at 65 kHz. IC Role / Device Role / Timing Role: Main switching transistor subjected to high dv/dt and repetitive inductive stress. Use Value: 5.0 V/ns peak diode recovery dv/dt rating ensures stable operation during critical body-diode commutation. | Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Load switch isolating 24 V DC field devices with overcurrent and thermal protection. Use Value: Junction temperature range (−55°C to +175°C) and 175°C max TJ support extended operation in sealed enclosures without forced cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 50 mΩ RDS(on), TO-220 package, logic-level gate (VGS(th) = 1–2.5 V) | Higher gate threshold enables direct microcontroller drive but higher on-resistance increases conduction loss | Select when gate drive voltage is limited to 5 V and board space allows TO-220 mounting |
| IXTP16N50D2 | 500 V VDS, 0.32 Ω RDS(on), TO-220, ultrafast body diode (trr = 35 ns) | Designed for high-voltage flyback and offline SMPS; unsuitable for low-voltage, high-current roles | Choose only for ≥300 V applications where voltage margin outweighs on-resistance penalty |
Compared with STP55NF06L and IXTP16N50D2, IRFU4105PBF delivers optimal balance of low on-resistance, rugged avalanche capability, and through-hole mechanical reliability for 48 V-class power switching-making it preferred for cost-sensitive, thermally constrained industrial loads where 55 V rating is sufficient.
Availability
IRFU4105PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, AC-DC PFC stages, and industrial power distribution systems requiring stable component supply and long-term manufacturability.
Supply support for IRFU4105PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies since 2015) pioneered high-performance power MOSFETs and IGBTs, focusing on energy-efficient power conversion for industrial, computing, and automotive markets.
The HEXFET® product line was engineered specifically for high-current, high-frequency switching applications demanding low RDS(on), fast transitions, and proven avalanche ruggedness-targeting power supplies, motor drives, and solid-state power controllers.
FAQ
What is the maximum junction temperature and thermal resistance of IRFU4105PBF?
The absolute maximum junction temperature is +175°C. Thermal resistance from junction-to-case is 2.2°C/W, and junction-to-ambient is 110°C/W for standard PCB mounting. With proper heatsinking, continuous 27 A operation is achievable at case temperatures up to 100°C per Figure 9 in the datasheet.
Is IRFU4105PBF suitable for logic-level gate drive?
No. IRFU4105PBF has a gate threshold voltage range of 2.0–4.0 V and requires 10 V for full enhancement (RDS(on) = 45 mΩ). It is not a logic-level MOSFET; driving it with 3.3 V or 5 V will result in significantly higher on-resistance and thermal stress.
Does IRFU4105PBF have an integrated ESD protection diode?
No. The device lacks on-chip ESD protection. Gate-to-source leakage is specified at ±100 nA at ±20 V, and gate oxide is susceptible to damage from static discharge. External Zener clamps (e.g., 12 V TVS) between gate and source are strongly recommended in production layouts.
Can IRFU4105PBF replace IRFU420 in existing designs?
Yes, with qualification. IRFU4105PBF offers lower RDS(on) (45 mΩ vs. 1.0 Ω), higher current (27 A vs. 1.8 A), and improved avalanche rating (65 mJ vs. 12 mJ). However, gate charge is higher (34 nC vs. 12 nC), requiring driver strength verification to maintain switching speed and avoid shoot-through in half-bridge configurations.
IRFU4105PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU4105PBF FAQ
1.How can I place an order for IRFU4105PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU4105PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU4105PBF reliable?
The price and inventory of IRFU4105PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105PBF is usually 5 days.
3.What payment methods are accepted for IRFU4105PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU4105PBF?
IRFU4105PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU4105PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU4105PBF?
For technical support, including IRFU4105PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105PBF requirements.
6.How does Aetrix verify that IRFU4105PBF is sourced from the original manufacturer or authorized distributors?
All IRFU4105PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105PBF meets industry standards.
7.What is the process for return or replacement of IRFU4105PBF?
All IRFU4105PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU4105PBF part is unused and in its original packaging.
Return procedure for IRFU4105PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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