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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU4105Z

Name: IRFU4105Z
Brand: Infineon Technologies
SKU: IRFU4105Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU4105Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU4105Z.pdf

Description:: MOSFET N-CH 55V 30A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU4105Z from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in the I-Pak (TO-251AA) package, rated for 55 V V_DSS, 24.5 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 10 ns, t_f = 24 ns), and rated repetitive avalanche energy up to 48 mJ.

For engineers reviewing the IRFU4105Z datasheet, IRFU4105Z pinout, IRFU4105Z application, or IRFU4105Z equivalent, this device is selected for high-reliability 12 V/24 V automotive power switching where low conduction loss, thermal robustness, and unclamped inductive switching capability are critical - especially in motor control, DC-DC converters, and load dump protection circuits.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining ruggedness. Its gate charge profile (Q_g = 18–27 nC, Q_gd = 7.0 nC) supports efficient high-frequency switching in hard-switched topologies. The integral body diode exhibits V_SD = 1.3 V and t_rr = 19–29 ns, enabling moderate-speed freewheeling in synchronous rectification or H-bridge configurations.

The device is characterized for operation across –55°C to +175°C junction range with normalized R_DS(on) variation ≤2.5× from 25°C to 175°C. Thermal resistance R_θJC = 3.12°C/W enables high-power dissipation when mounted on copper-clad PCBs with adequate heatsinking, and its SOA curve permits safe single-pulse operation up to 100 A at V_DS = 44 V for 100 µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage compatible with 42 V automotive systems and 36 V industrial rails.
R_DS(on)	24.5 mΩ max @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, reducing thermal stress in compact layouts.
I_D (continuous)	30 A @ T_C = 25°C - Supports high-current loads such as fuel pumps, radiator fans, and solenoid drivers.
E_AS (tested)	48 mJ - Confirmed single-pulse avalanche energy allows reliable operation under inductive turn-off transients without snubbers.
t_f / t_r	24 ns / 40 ns - Fast edge rates reduce switching losses in PWM frequencies up to 200 kHz.
T_J max	175°C - Enables sustained operation in engine bay environments without derating below ambient +125°C.
Q_gd	7.0 nC - Low Miller charge improves immunity to dv/dt-induced false turn-on in high-side configurations.

Pinout & Package

IRFU4105Z uses the I-Pak (TO-251AA) surface-mount package: three leads, isolated tab (drain-connected), no thermal pad. Mounting torque: 10 lbf·in (1.1 N·m) for screw-down variants.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance.
Lead 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <27 nC total charge; sensitive to ESD and layout parasitics.
Lead 3 (Drain)	Power output (D)	Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24.5 mΩ at 10 V drive enables >95% efficiency in 12 V/20 A DC-DC stages with minimal heatsink.
175°C junction rating	Supports full-rated current in under-hood applications without thermal shutdown or lifetime degradation.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to I_AR = 21 A, eliminating need for external clamping diodes in motor drives.
Fast body diode	V_SD = 1.3 V and t_rr = 19–29 ns allow use in synchronous rectification without significant reverse recovery loss.
Low Q_gd/Q_g ratio	~39% Miller-to-total gate charge improves gate drive stability during high dv/dt transitions in half-bridge legs.

Applications

Automotive Engine Control

Industrial DC Motor Drive

Use Scenario: Switching fuel injectors and ignition coils in gasoline/diesel ECUs under wide ambient temperature swings and vibration.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed 12 V loads with microsecond-level timing precision.

Use Value: 175°C rating ensures reliability at 150°C under-hood ambient; 48 mJ E_AS absorbs coil flyback energy without snubber components.

Use Scenario: Driving brushed DC motors in factory automation conveyors and robotic joints using PWM at 10–50 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or half-bridge topology managing bidirectional current flow.

Use Value: 24.5 mΩ R_DS(on) limits I²R loss to <10 W at 20 A, enabling air-cooled operation in IP65 enclosures.

Automotive Lighting Control

48 V Mild Hybrid DC-DC Converter

Use Scenario: Dimming and switching LED headlamps and daytime running lights with PWM-based brightness control.

IC Role / Device Role / Timing Role: Low-side current sink modulating LED string current up to 15 A with 100 ns switching edges.

Use Value: Fast t_f = 24 ns minimizes transition loss during 1–20 kHz dimming; low Q_gd prevents shoot-through in multi-phase arrays.

Use Scenario: Synchronous rectification in 48 V–12 V bi-directional buck-boost converters for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Secondary-side power switch operating in synchronous rectifier mode with body diode conduction during dead time.

Use Value: V_SD = 1.3 V and t_rr = 19 ns reduce reverse recovery loss by >40% vs. standard Schottky alternatives at 200 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF55	55 V, 30 A, R_DS(on) = 30 mΩ, TO-220 package, T_J max = 175°C	Through-hole mounting; higher R_DS(on) increases conduction loss by ~23% at 20 A	Preferred where manual assembly or legacy board design requires TO-220 footprint.
IXTP30N55P	55 V, 30 A, R_DS(on) = 28 mΩ, TO-220FP package, T_J max = 175°C, no avalanche rating	No specified E_AS; unsuitable for unclamped inductive loads without external protection	Select only in purely resistive or capacitive switching applications with controlled gate drive.

Compared with STP30NF55 and IXTP30N55P, IRFU4105Z offers superior thermal performance in surface-mount layouts, lower conduction loss, and verified avalanche ruggedness - making it the preferred choice for space-constrained, high-reliability automotive power stages where transient robustness is non-negotiable.

Availability

IRFU4105Z is available at Aetrix Electronics and suitable for automotive engine control units, industrial DC motor drives, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended product lifecycles.

Supply support for IRFU4105Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was engineered specifically for high-efficiency, high-reliability power switching in harsh environments - particularly automotive under-hood, industrial motor control, and telecom power systems.

FAQ

What is the maximum gate-source voltage rating for IRFU4105Z?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and turn-on. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching or ESD events.

Can IRFU4105Z be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Fig. 10) enables inherent current sharing. However, matched gate drive impedance (<5 Ω per device) and symmetrical PCB layout (equal trace length/inductance) are mandatory to avoid dynamic imbalance and localized thermal runaway.

Is the IRFU4105Z RoHS-compliant and PPAP-capable?

Yes - IRFU4105Z meets RoHS Directive 2011/65/EU and is qualified to AEC-Q101 for automotive applications. Full PPAP documentation (including test reports, process flow, FMEA, and control plans) is available upon request for Tier 1 automotive customers.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes - the body diode is rated for continuous source current (I_S) up to 30 A and pulsed current (I_SM) up to 120 A. Its V_SD = 1.3 V and t_rr = 19–29 ns make it suitable for CCM operation up to ~100 kHz in 12 V–48 V buck converters, provided junction temperature remains ≤175°C.

IRFU4105Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU4105Z FAQ

1.How can I place an order for IRFU4105Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU4105Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU4105Z reliable?

The price and inventory of IRFU4105Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105Z is usually 5 days.

3.What payment methods are accepted for IRFU4105Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU4105Z?

IRFU4105Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU4105Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU4105Z?

For technical support, including IRFU4105Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105Z requirements.

6.How does Aetrix verify that IRFU4105Z is sourced from the original manufacturer or authorized distributors?

All IRFU4105Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105Z meets industry standards.

7.What is the process for return or replacement of IRFU4105Z?

All IRFU4105Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU4105Z part is unused and in its original packaging.

Return procedure for IRFU4105Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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