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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU4105ZPBF

Name: IRFU4105ZPBF
Brand: Infineon Technologies
SKU: IRFU4105ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU4105ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU4105ZPBF.pdf

Description:: MOSFET N-CH 55V 30A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU4105ZPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 30A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 24.5 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to T_jmax. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFU4105ZPBF datasheet, IRFU4105ZPBF pinout, IRFU4105ZPBF application, or IRFU4105ZPBF equivalent, key selection criteria include its low conduction loss at 18A, fast switching (t_r = 40 ns, t_f = 24 ns), body diode recovery (t_rr = 19–29 ns), thermal robustness (R_θJC = 3.12°C/W), and unclamped inductive switching capability.

Technical Context

This HEXFET® device employs advanced silicon processing to minimize R_DS(on) per die area while maintaining ruggedness. Its design integrates a low-inductance D-Pak layout (L_D = 4.5 nH, L_S = 7.5 nH) and supports gate drive with standard 10 V logic-level signals.

The MOSFET exhibits thermally stable threshold voltage (V_GS(th) = 2.0–4.0 V, with +0.053 V/°C tempco) and delivers 16 S forward transconductance at 18 A. Its body diode is characterized for hard-switched freewheeling with V_SD ≤ 1.3 V and Q_rr = 14–21 nC under defined dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(on)	24.5 mΩ max @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 25 A continuous drain current.
I_D	30 A @ T_C = 25°C - Continuous current rating limited by package thermal resistance, not silicon.
Q_g	27 nC max - Determines gate drive power requirement; compatible with standard 1 A peak gate drivers.
t_r/t_f	40 ns / 24 ns - Fast edge rates support >200 kHz switching in hard-switched topologies.
E_AS	120 mJ (tested) - Confirmed single-pulse avalanche energy enables reliable operation under inductive fault conditions.
T_J max	175°C - Allows sustained operation in high-ambient industrial environments without derating.

Pinout & Package

IRFU4105ZPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal performance. The package measures 6.73 mm × 6.22 mm × 2.39 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to PCB ground plane for minimal loop inductance.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <200 nA leakage control; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface - must be soldered to large copper pour for R_θJC = 3.12°C/W.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24.5 mΩ at 10 V drive enables >95% efficiency in 12–48 V buck converters at 20 A load.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in relay/motor drive circuits.
Fast body diode	19–29 ns reverse recovery time and 14–21 nC Q_rr reduce switching losses during synchronous rectification or freewheeling.
175°C junction rating	Supports full 30 A current capability at case temperatures up to 100°C without derating, critical for sealed industrial enclosures.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Buck Converter

Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 500 W fan or pump load.

IC Role / Device Role / Timing Role: Low-side switching element handling 30 A peak phase current with 200 kHz PWM frequency.

Use Value: 24.5 mΩ R_DS(on) limits conduction loss to ≤2.2 W at 25 A, reducing heatsink size by 40% vs. 40 mΩ alternatives.

Use Scenario: Output synchronous rectifier in 48 V to 12 V isolated DC-DC module for telecom power shelf.

IC Role / Device Role / Timing Role: Secondary-side power switch operating in continuous conduction mode with 100–300 kHz switching.

Use Value: Fast t_f = 24 ns and low Q_gd = 7.0 nC minimize shoot-through risk and improve light-load efficiency over 92%.

Industrial Power Supply OR-ing

Automotive Body Control Module

Use Scenario: Redundant 24 V supply OR-ing diode replacement in PLC power backplane.

IC Role / Device Role / Timing Role: Ideal diode controller switch managing bidirectional current flow between dual supplies.

Use Value: Integrated body diode with V_SD ≤ 1.3 V and low R_DS(on) reduces forward drop by 75% vs. Schottky diodes, cutting thermal dissipation by >3 W per channel.

Use Scenario: Load switch for HVAC actuator or window lift motor in 12 V automotive system.

IC Role / Device Role / Timing Role: High-side or low-side protected switch with integrated avalanche energy handling.

Use Value: 120 mJ E_AS rating withstands inductive kickback from 15 A motor stall without external clamping, meeting ISO 7637-2 pulse 5a requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF55	R_DS(on) = 30 mΩ @ 10 V; higher Q_g = 45 nC; TO-220 package	Larger footprint and higher gate drive loss; better heat sinking via through-hole mounting	Prefer when board space allows TO-220 and thermal mass outweighs switching speed needs.
IXTP30N10P	R_DS(on) = 32 mΩ @ 10 V; lower V_DSS = 100 V; TO-220AB package	Higher voltage margin but slower t_r/t_f (60/40 ns); no specified E_AS rating	Select only if 100 V blocking is mandatory and avalanche robustness is secondary.

Compared with STP30NF55 and IXTP30N10P, IRFU4105ZPBF offers superior switching efficiency (lower Q_g, faster edges), smaller D-Pak footprint, and verified repetitive avalanche capability-making it optimal for compact, high-frequency, high-reliability 48 V industrial power stages.

Availability

IRFU4105ZPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFU4105ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial, computing, and automotive systems-emphasizing low R_DS(on), rugged avalanche performance, and thermal stability.

FAQ

Is IRFU4105ZPBF suitable for 12 V automotive applications?

Yes. With 55 V V_DSS, it provides sufficient margin for 12 V systems subject to ISO 7637-2 load dump pulses (up to 35 V). Its 175°C rating and tested 120 mJ E_AS support reliable operation in engine bay environments where ambient temperatures exceed 105°C.

What is the recommended gate resistor value for 200 kHz switching?

A 10 Ω to 24.5 Ω series gate resistor is recommended. At 200 kHz, this range balances switching speed (t_r/t_f) against ringing and EMI, based on the device's 27 nC Q_g and typical driver output impedance. Lower values increase dv/dt stress; higher values raise switching losses.

Does IRFU4105ZPBF require a heatsink in D-Pak mounting?

Yes, for continuous I_D > 10 A. With R_θJA = 40°C/W (PCB mount), even at 10 A (2.45 W loss), junction temperature rise exceeds 100°C above ambient. A 25 mm² copper pour with thermal vias reduces R_θJA to ~25°C/W; larger heatsinks are needed for >20 A operation.

Can IRFU4105ZPBF replace IRFR4105ZPbF in existing designs?

Yes, with identical electrical specs and pinout. Both share the same die, 55 V/30 A rating, and 24.5 mΩ R_DS(on). IRFU4105ZPbF is the D-Pak variant; IRFR4105ZPbF is I-Pak. Mechanical mounting differs, but circuit design, layout, and thermal modeling remain directly transferable.

IRFU4105ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU4105ZPBF FAQ

1.How can I place an order for IRFU4105ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU4105ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU4105ZPBF reliable?

The price and inventory of IRFU4105ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4105ZPBF is usually 5 days.

3.What payment methods are accepted for IRFU4105ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4105ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU4105ZPBF?

IRFU4105ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU4105ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU4105ZPBF?

For technical support, including IRFU4105ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4105ZPBF requirements.

6.How does Aetrix verify that IRFU4105ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFU4105ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4105ZPBF meets industry standards.

7.What is the process for return or replacement of IRFU4105ZPBF?

All IRFU4105ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4105ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU4105ZPBF part is unused and in its original packaging.

Return procedure for IRFU4105ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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