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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU4510PBF

Name: IRFU4510PBF
Brand: Infineon Technologies
SKU: IRFU4510PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU4510PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU4510PBF.pdf

Description:: MOSFET N-CH 100V 56A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:1,310

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Product details

Overview

IRFU4510PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in DPAK (TO-252) package, rated for 100 V V_DS, 11.1 mΩ R_DS(on) at V_GS = 10 V, and 56 A continuous drain current (package-limited), designed for high-frequency hard-switched DC-DC converters and synchronous rectification in SMPS.

For engineers reviewing the IRFU4510PBF datasheet, IRFU4510PBF pinout, IRFU4510PBF application, or IRFU4510PBF equivalent, this device is selected for its enhanced avalanche ruggedness, low gate charge (54 nC typ.), fast switching (t_r = 42 ns), robust body diode (dV/dt = 7.0 V/ns), and thermally optimized DPAK footprint for surface-mount power stages.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-assisted drift region to achieve simultaneous low R_DS(on) and high dV/dt immunity. Its gate structure minimizes Miller capacitance (C_rss = 104 pF) and supports stable operation under high dv/dt transients up to 7.0 V/ns during diode recovery.

The integrated body diode features soft reverse recovery (Q_rr = 47 nC at T_J = 25°C, I_F = 38 A) and is characterized for repetitive unclamped inductive switching (E_AS = 143 mJ single-pulse). Thermal design leverages R_θJC = 1.05 °C/W for direct heatsink mounting via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus and 100 V clamp circuits.
R_DS(on) (typ.)	11.1 mΩ at V_GS = 10 V, T_J = 25°C - Delivers <1.2 W conduction loss at 38 A, critical for high-efficiency SMPS output stages.
Q_g (typ.)	54 nC - Low gate charge reduces driver power demand and enables >500 kHz switching without excessive gate drive losses.
E_AS	143 mJ (single-pulse) - Supports reliable unclamped inductive switching in UPS and motor drive protection circuits.
C_oss (eff., TR)	478 pF - Time-related effective output capacitance determines turn-off energy loss and snubber sizing in hard-switched topologies.
dV/dt rating	7.0 V/ns - Confirmed body diode dv/dt immunity prevents false turn-on during fast commutation in bridge configurations.
R_θJC	1.05 °C/W - Enables direct thermal path to heatsink; allows 56 A continuous operation at T_C = 100°C with minimal derating.

Pinout & Package

IRFU4510PBF uses the DPAK (TO-252) surface-mount package with an exposed drain pad on the bottom for thermal and electrical connection. The three terminals are arranged in a single-row configuration compatible with automated assembly and PCB-level heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current in common-source topology.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; driven by dedicated gate driver to overcome 0.61 Ω internal resistance.
Pin 3 (Drain)	Power output (D)	Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to large copper pour or heatsink.

Key Features

Feature	Design Value
Enhanced avalanche SOA	143 mJ single-pulse E_AS with validated thermal failure model - eliminates need for external snubbers in UPS hold-up circuits.
Low Q_gd/Q_g ratio	15 nC / 54 nC = 28% - minimizes Miller-induced switching delay and improves controllability in high-dV/dt environments.
Soft-recovery body diode	Q_rr = 47 nC, t_rr = 34 ns (T_J = 25°C) - reduces EMI and voltage overshoot during synchronous rectification transitions.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 - supports standard reflow profiles without baking or special handling.
Thermally optimized DPAK	R_θJC = 1.05 °C/W - enables 56 A continuous current with case temperature ≤100°C using only PCB copper as heatsink.

Applications

Server VRM Output Stage

Industrial UPS Inverter

Use Scenario: High-current, high-frequency buck converter delivering 12 V/60 A to CPU cores in 1U server platforms.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 600 kHz with forced PWM control and adaptive dead-time management.

Use Value: 11.1 mΩ R_DS(on) and 54 nC Q_g reduce conduction + switching losses below 2.1 W, enabling >94% efficiency at full load without active cooling.

Use Scenario: Bidirectional DC link switch in online double-conversion UPS handling 48 V battery backup and 100 V AC-derived DC bus.

IC Role / Device Role / Timing Role: Hard-switched high-side switch in half-bridge inverter stage, subjected to repetitive unclamped inductive transients during transfer events.

Use Value: 143 mJ E_AS and 7.0 V/ns dV/dt rating ensure reliable operation during grid-fail transitions without external clamping diodes or RC snubbers.

Telecom DC-DC Brick

Motor Drive Protection Switch

Use Scenario: Isolated forward converter secondary-side synchronous rectifier in 48 V input telecom power supply (3 kW brick).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by transformer-coupled gate drive, operating at 250–500 kHz with zero-voltage switching assist.

Use Value: Soft-recovery body diode (Q_rr = 47 nC) suppresses ringing and EMI during light-load discontinuous conduction mode, meeting EN55022 Class B limits.

Use Scenario: Fault-isolation switch in 24 V BLDC motor controller, placed between H-bridge and battery to disconnect during overcurrent or short-circuit events.

IC Role / Device Role / Timing Role: Fast-acting power switch triggered by protection logic, required to interrupt >100 A fault current within <10 μs.

Use Value: 252 A pulsed drain current (I_DM) and 1.05 °C/W R_θJC allow safe interruption of 120 A faults for 10 μs without junction overheating or bond-wire fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 9.5 mΩ (lower), Q_g = 68 nC (higher), TO-220 package	Requires through-hole mounting and external heatsink; unsuitable for space-constrained DPAK layouts	Select when lower conduction loss outweighs board area and thermal interface constraints.
IXTP110N10T	R_DS(on) = 10.5 mΩ, Q_g = 45 nC (lower), TO-220FP package	Vertical-mount FP package offers better airflow but lacks DPAK's thermal pad integration	Select when gate drive efficiency is prioritized and mechanical height permits FP form factor.

Compared with STP110N10F7 and IXTP110N10T, IRFU4510PBF uniquely balances ultra-low Q_g, DPAK thermal performance, and proven avalanche ruggedness-making it optimal for compact, high-reliability SMPS where board area, thermal resistance, and transient immunity are co-constrained.

Availability

IRFU4510PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, uninterruptible power supplies, and hard-switched motor drive protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFU4510PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap power technologies.

IRFU4510PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in SMPS, UPS, and motor control-emphasizing ruggedness, low-loss switching, and thermal scalability.

FAQ

What is the maximum continuous drain current for IRFU4510PBF at 100°C case temperature?

The maximum continuous drain current is 45 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, V_GS = 10 V (Silicon Limited)". This reflects silicon-limited conduction capability after thermal derating, distinct from the 56 A package-limited rating at 25°C.

Does IRFU4510PBF have a fully characterized body diode for synchronous rectification?

Yes - the body diode is fully characterized for reverse recovery (t_rr = 34 ns, Q_rr = 47 nC at T_J = 25°C), dv/dt immunity (7.0 V/ns), and softness (low I_RRM = 2.4 A). These parameters are measured per JEDEC standards and documented in Figures 7, 17, and 18 of the official datasheet.

Can IRFU4510PBF be used in avalanche mode for circuit protection?

Yes - it is rated for single-pulse avalanche energy of 143 mJ and supports repetitive avalanche up to EAR = 125 mJ at 1.0% duty cycle. Safe operation requires limiting junction temperature rise (ΔT_J) using Z_thJC curves (Figure 13) and verifying that peak T_J remains below 175°C per AN-1005 guidelines.

Is the DPAK package of IRFU4510PBF compatible with standard reflow soldering processes?

Yes - IRFU4510PBF is lead-free and RoHS-compliant (PbF suffix), qualified to JEDEC J-STD-020 moisture sensitivity level 1. It withstands peak reflow temperatures up to 260°C for 10 seconds and is compatible with standard SnAgCu (SAC305) profiles without preconditioning or baking.

IRFU4510PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3031 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU4510PBF FAQ

1.How can I place an order for IRFU4510PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU4510PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU4510PBF reliable?

The price and inventory of IRFU4510PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4510PBF is usually 5 days.

3.What payment methods are accepted for IRFU4510PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4510PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU4510PBF?

IRFU4510PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU4510PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU4510PBF?

For technical support, including IRFU4510PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4510PBF requirements.

6.How does Aetrix verify that IRFU4510PBF is sourced from the original manufacturer or authorized distributors?

All IRFU4510PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4510PBF meets industry standards.

7.What is the process for return or replacement of IRFU4510PBF?

All IRFU4510PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4510PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU4510PBF part is unused and in its original packaging.

Return procedure for IRFU4510PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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