Infineon Technologies IRFU48ZPBF

Overview

IRFU48ZPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 42A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 11 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFU48ZPBF datasheet, IRFU48ZPBF pinout, IRFU48ZPBF application, or IRFU48ZPBF equivalent, key selection criteria include its low conduction loss (8.86–11 mΩ), fast switching (t_d(on) = 15 ns, t_f = 35 ns), body diode recovery (t_rr = 20–40 ns), and thermal robustness (R_θJC = 1.64°C/W).

Technical Context

This device uses advanced HEXFET® silicon processing to minimize on-resistance per unit area while maintaining ruggedness. Its gate threshold voltage (2.0–4.0 V) enables direct logic-level drive from 3.3 V/5 V controllers, and its 1720 pF input capacitance (C_iss) supports stable gate control with moderate external gate resistance.

The integrated body diode exhibits 1.3 V forward drop at 37 A and 28 nC reverse recovery charge (Q_rr), enabling reliable operation in hard-switched topologies. Repetitive avalanche capability up to T_jmax is validated per AN-1005, with E_AS = 250 mJ (tested) and I_AR = 42 A under defined unclamped inductive conditions.

Key Specifications

Pinout & Package

IRFU48ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal performance. The package has three terminals: Drain (D), Source (S), and Gate (G), arranged in standard D-Pak pinout orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF55 and IXTP44N50L2, IRFU48ZPBF delivers superior efficiency in 48 V systems due to its 11 mΩ R_DS(on) and optimized gate charge, while maintaining identical thermal limits and proven avalanche ruggedness-making it the preferred choice for compact, high-reliability power stages.

Availability

IRFU48ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and industrial LED drivers requiring stable component supply and long-term manufacturability.

Supply support for IRFU48ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems-prioritizing low R_DS(on), rugged avalanche behavior, and thermal resilience.

FAQ

What is the maximum continuous drain current for IRFU48ZPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 25 A (derated from 42 A at 25°C), as specified in the Absolute Maximum Ratings table. This linear derating follows the 1.64°C/W junction-to-case thermal resistance and ensures junction temperature remains ≤175°C under steady-state conditions with proper PCB copper area.

Does IRFU48ZPBF require a gate resistor for stable switching?

Yes-a gate resistor (typically 10–22 Ω) is recommended to dampen gate ringing caused by L_S = 7.5 nH and L_D = 4.5 nH internal inductances. Without it, overshoot exceeding ±20 V gate rating may occur, risking oxide damage; the 60 nC total gate charge also necessitates sufficient driver peak current (>3 A) for sub-100 ns transitions.

Can IRFU48ZPBF be used in synchronous rectification mode?

Yes-its body diode has t_rr = 20–40 ns and Q_rr = 14–28 nC, enabling effective synchronous rectification in buck converters up to 500 kHz. However, external timing must ensure gate turn-on occurs after body diode reverse recovery to avoid cross-conduction; dead-time control is essential.

Is IRFU48ZPBF suitable for automotive applications?

No-it is not AEC-Q101 qualified and lacks automotive-grade screening (e.g., HTOL, ESD, temperature cycling). While its 175°C rating meets under-hood thermal demands, absence of qualification documentation and traceability for PPAP makes it unsuitable for production automotive ECUs; Infineon's AUIRF48Z series is the qualified alternative.