Infineon Technologies IRFU5305

Overview

IRFU5305 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in straight-lead through-hole D-Pak (TO-252AA) package, rated for -55 V V(BR)DSS, 0.065 Ω RDS(on) at VGS = -10 V, -31 A continuous drain current at TC = 25°C, and fully avalanche-rated to 280 mJ single-pulse energy - deployed in DC-DC synchronous rectification, motor control H-bridge high-side switching, and industrial power supply OR-ing circuits.

For engineers reviewing the IRFU5305 datasheet, IRFU5305 pinout, IRFU5305 application, or IRFU5305 equivalent, key selection criteria include verified -55 V blocking capability, low 0.065 Ω on-resistance at -10 V gate drive, -31 A thermal-limited current handling, fast 66 ns rise time, and rugged unclamped inductive switching performance under -16 A avalanche conditions.

Technical Context

This P-channel MOSFET operates with negative gate-to-source voltage control logic, requiring VGS(th) between -2.0 V and -4.0 V to initiate conduction. Its body diode exhibits -1.3 V forward voltage at -16 A and 25°C, with 71–110 ns reverse recovery time and 170–250 nC Qrr - critical for synchronous buck converter freewheeling path efficiency.

The device features 1200 pF input capacitance (Ciss), 520 pF output capacitance (Coss), and 250 pF reverse transfer capacitance (Crss) at VDS = -25 V, enabling predictable gate drive design with 63 nC total gate charge and 29 nC Miller charge - supporting robust switching at up to 5.0 V/ns peak diode recovery dv/dt.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) through-hole package with straight leads; thermally enhanced plastic body featuring exposed drain pad on underside for PCB copper pour attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9530, IRFU5305 delivers 4.6× lower RDS(on) and 2.6× higher current rating in a surface-mount-compatible through-hole package; versus SiHP12N50C, it eliminates need for bootstrap or isolated gate drivers but trades off voltage rating and N-channel efficiency advantages.

Availability

IRFU5305 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous rectification, OR-ing diode replacement, and programmable current limit circuits requiring stable component supply and long-term production continuity.

Supply support for IRFU5305 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency switching in industrial power conversion, motor drives, and telecom infrastructure - emphasizing low RDS(on), rugged avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum safe operating voltage for IRFU5305 in continuous DC blocking?

The IRFU5305 has a guaranteed drain-to-source breakdown voltage V(BR)DSS of -55 V at ID = -250 µA and TJ = 25°C. Derating is required above 25°C: the temperature coefficient is -0.034 V/°C, so at 125°C junction temperature, the effective rating drops to approximately -52.6 V. Designers must maintain ≥20% margin for reliability in sustained DC applications.

Can IRFU5305 be used without a heatsink in a 5 A, 24 V load switch application?

Yes - with 0.065 Ω RDS(on), conduction loss is 1.625 W at 5 A. Using RθJA = 50 °C/W (PCB mount), junction temperature rise is ~81°C above ambient. At 25°C ambient, TJ ≈ 106°C - within the -55°C to +175°C operating range. A minimal 1-in² copper pour is recommended to stabilize thermal performance.

Does IRFU5305 require negative gate drive voltage relative to source?

Yes - as a P-channel enhancement-mode MOSFET, IRFU5305 turns on when VGS is negative. Gate threshold voltage ranges from -2.0 V to -4.0 V, and full enhancement occurs at VGS ≤ -10 V. Driving gate to system ground while source is at positive potential (e.g., 24 V) achieves proper negative bias; a dedicated negative rail is not required.

How does the body diode performance impact use in synchronous rectification?

The integrated body diode has VF = -1.3 V at -16 A and 25°C, with trr = 71–110 ns and Qrr = 170–250 nC. In synchronous rectification, this diode conducts during dead time; its relatively low forward drop and moderate recovery charge reduce switching losses versus external Schottky diodes - but careful dead-time optimization is essential to avoid cross-conduction.