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Infineon Technologies IRFU5505

Part No.:
IRFU5505
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU5505.pdf
Description:
MOSFET P-CH 55V 18A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,328

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Product details

Overview

IRFU5505 from Infineon (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) package, rated for -55V VDS, 0.11Ω RDS(on) at VGS = -10V, and -18A continuous drain current at TC = 25°C. It delivers fast switching, full avalanche ruggedness, and low gate charge (32 nC), making it suitable for DC-DC converters, load switches, and reverse polarity protection circuits.

For engineers reviewing the IRFU5505 datasheet, IRFU5505 pinout, IRFU5505 application, or IRFU5505 equivalent, key selection criteria include verified P-channel logic-level compatibility, junction-to-case thermal resistance of 2.2°C/W, unclamped inductive switching capability up to 150 mJ, and body diode recovery performance under high dv/dt (-5.0 V/ns).

Technical Context

This device employs fifth-generation HEXFET processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche energy rating (EAS = 150 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry in low-voltage systems.

The TO-252AA package provides direct thermal path from junction to case (RθJC = 2.2°C/W) and supports through-hole mounting via straight leads. Gate threshold voltage ranges from -2.0V to -4.0V, enabling reliable turn-on with standard -5V or -10V gate drive.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-55 V - Maximum blocking voltage in reverse-polarity protection or high-side switch applications
RDS(on)0.11 Ω @ VGS = -10V - Enables ≤2.0 W conduction loss at -18 A, critical for thermally constrained PCB layouts
ID (continuous)-18 A @ TC = 25°C - Supports high-current load switching in industrial power supplies
Qg32 nC - Determines gate driver power requirement and switching speed in PWM circuits
EAS150 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive load transients
dv/dt rating-5.0 V/ns - Specifies maximum rate of voltage rise the body diode can withstand during reverse recovery
TJ range-55°C to +150°C - Validated operation across automotive under-hood and industrial ambient conditions

Pinout & Package

IRFU5505 uses the TO-252AA (D-Pak) package with straight leads for through-hole mounting. The exposed drain pad (pins 2 and 4) serves as primary thermal and electrical connection point.

Pin/TerminalCircuit RoleDesign Meaning
1GATEControl terminal requiring -10V to fully enhance; threshold range (-2.0V to -4.0V) supports TTL-compatible drive
2DRAINMain high-side power node; electrically and thermally connected to exposed metal tab for heat sinking
3SOURCEReference node for gate drive and load return; ties to system ground in high-side configurations
4DRAINSecond drain connection-parallel path to pin 2 for reduced inductance and improved thermal spreading

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.11 Ω reduces I²R losses by >30% vs. legacy P-channel MOSFETs at same current density
Full avalanche rating150 mJ EAS eliminates need for external snubbers in relay or solenoid drive circuits
Fast body diode recoverytrr = 51–77 ns enables use in synchronous rectification without cross-conduction risk
Low gate charge32 nC Qg allows efficient driving with low-power microcontroller GPIO or small gate drivers

Applications

Reverse Polarity ProtectionHigh-Side Load Switch

Use Scenario: Input protection for 12V/24V industrial controllers against incorrect battery connection.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with power input rail.

Use Value: Eliminates 0.7V forward drop of Schottky diodes, preserving ≥98% input efficiency at 10A load.

Use Scenario: Controlled power-up sequencing for FPGA or DSP core voltage rails.

IC Role / Device Role / Timing Role: High-side switch enabling soft-start and fault-isolation via gate-controlled turn-on.

Use Value: RDS(on) = 0.11Ω limits voltage drop to <1.1V at 10A, avoiding brown-out during inrush.

DC-DC Synchronous RectifierMotor H-Bridge High-Side Driver

Use Scenario: Secondary-side rectification in isolated 48V→12V flyback converter for telecom power modules.

IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing output Schottky diode.

Use Value: Body diode VSD = -1.6V at -9.6A and trr ≤ 77 ns enable clean commutation at 200 kHz switching frequency.

Use Scenario: Upper-leg switch in 24V brushed DC motor control for robotic actuators.

IC Role / Device Role / Timing Role: High-side driver in half-bridge topology with bootstrap gate drive.

Use Value: Avalanche rating (150 mJ) absorbs inductive kickback during PWM dead-time transitions without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NRDS(on) = 0.20Ω (higher), Qg = 65 nC (larger), TO-220 packageLarger thermal footprint required; lower switching efficiency at >50 kHzPrefer when board space allows TO-220 and cost sensitivity outweighs efficiency needs
Si2305DSRDS(on) = 0.055Ω @ VGS = -4.5V, SOT-23 package, ID = -4.1ALower current rating; unsuitable for >5A loads; no avalanche rating specifiedSelect only for low-power logic-level applications where size and gate drive voltage are prioritized over ruggedness

Compared with IRF9540N and Si2305DS, IRFU5505 uniquely balances medium-current capability (-18A), low RDS(on) (0.11Ω), TO-252 thermal performance (RθJC = 2.2°C/W), and documented avalanche ruggedness-making it optimal for industrial-grade high-side switching where reliability and efficiency coexist.

Availability

IRFU5505 is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, DC-DC synchronous rectification, and motor H-bridge applications requiring stable component supply and long-term industrial availability.

Supply support for IRFU5505 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET® product line was engineered for high-efficiency power conversion, emphasizing low conduction loss, fast switching, and rugged transient handling-targeting industrial motor drives, telecom power, and automotive body electronics.

FAQ

Is IRFU5505 suitable for logic-level gate drive?

No-IRFU5505 requires VGS ≤ -10V for guaranteed RDS(on) = 0.11Ω. Its gate threshold spans -2.0V to -4.0V, so -5V drive yields partial enhancement with elevated RDS(on). For true logic-level operation, consider Si2305DS or FDS4435B instead.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the continuous drain current drops to -11A per datasheet Fig. 9. SOA is further constrained by RDS(on) limiting at low VDS and thermal runaway at high VDS/ID-see Fig. 8 for pulse-width-dependent boundaries up to 10ms.

Can IRFU5505 replace IRFR5505 in a design?

Yes-IRFU5505 and IRFR5505 share identical electrical specs and die, differing only in lead form: IRFU5505 has straight leads for through-hole mounting, while IRFR5505 has gull-wing leads for surface mount. Mechanical layout and soldering process must match the selected variant.

Does IRFU5505 require a gate resistor for stability?

A gate resistor (typically 10–100Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dv/dt coupling. The datasheet's switching test circuit (Fig. 10a) uses RG = 2.6Ω, confirming necessity for controlled edge rates in high-frequency operation.

IRFU5505 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
57W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU5505 FAQ

1.How can I place an order for IRFU5505 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU5505 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU5505 reliable?

The price and inventory of IRFU5505 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU5505 is usually 5 days.

3.What payment methods are accepted for IRFU5505?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU5505 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU5505?

IRFU5505 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU5505 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU5505?

For technical support, including IRFU5505 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU5505 requirements.

6.How does Aetrix verify that IRFU5505 is sourced from the original manufacturer or authorized distributors?

All IRFU5505 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU5505 meets industry standards.

7.What is the process for return or replacement of IRFU5505?

All IRFU5505 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU5505, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU5505 part is unused and in its original packaging.

Return procedure for IRFU5505:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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