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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU6215

Name: IRFU6215
Brand: Infineon Technologies
SKU: IRFU6215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU6215

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU6215.pdf

Description:: MOSFET P-CH 150V 13A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU6215 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-251AA (IPAK) package, designed for through-hole mounting in high-reliability DC-DC converters, motor control H-bridges, and industrial power switches. It delivers -150 V V_BRDSS, 0.295 Ω R_DS(on) at -10 V V_GS, -13 A continuous drain current at 25°C, and full avalanche rating up to 310 mJ.

For engineers reviewing the IRFU6215 datasheet, IRFU6215 pinout, IRFU6215 application, or IRFU6215 equivalent, key selection criteria include its negative-channel operation, thermal derating behavior (0.71 W/°C), fast switching performance (t_r = 36 ns, t_f = 37 ns), and body diode recovery characteristics (t_rr = 160–240 ns, Q_rr = 1.2–1.7 µC).

Technical Context

This device operates as a high-voltage, medium-current P-channel switch with gate threshold voltage ranging from -2.0 V to -4.0 V, enabling direct interface with standard logic-level drivers when used in high-side configurations. Its ruggedized construction includes fully rated single-pulse avalanche capability (E_AS = 310 mJ) and repetitive avalanche energy handling (E_AR = 11 mJ), supporting unclamped inductive load switching without external snubbers.

The TO-251AA package provides low thermal resistance (R_θJC = 1.4 °C/W) and integrates internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH), directly influencing switching waveform integrity and EMI generation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-150 V - Withstands reverse-biased drain-source voltage up to this level before breakdown, critical for high-voltage bus protection.
R_DS(on)	0.295 Ω @ V_GS = -10 V, I_D = -6.6 A - Defines conduction loss in linear and saturated switching regions; impacts thermal design at >5 A loads.
I_D (25°C)	-13 A - Maximum continuous DC current at case temperature ≤25°C; derates to -9.0 A at 100°C.
E_AS	310 mJ - Energy absorbed during single unclamped inductive switching event; enables robustness in relay/motor drive applications.
t_r/t_f	36 ns / 37 ns - Rise/fall times under specified test conditions (V_DD = -75 V, R_G = 6.8 Ω); determines minimum practical switching frequency and gate drive strength requirements.
Q_g	66 nC - Total gate charge required to fully turn on; dictates gate driver peak current (e.g., ≥3.3 A for 20 ns rise time) and driver power dissipation.
V_SD	-1.6 V @ I_S = -6.6 A - Forward voltage drop of integrated body diode; affects efficiency and thermal stress in synchronous rectification or freewheeling paths.

Pinout & Package

IRFU6215 uses the TO-251AA (IPAK) package - a three-lead, through-hole variant of the DPAK family with straight leads optimized for manual assembly and wave soldering. The package features exposed drain tab for thermal conduction and mechanical anchoring.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives gate drive signal; requires < ±20 V absolute max rating and 66 nC total charge for full enhancement.
2 - Drain	High-side power terminal	Connected to high-voltage rail; electrically tied to exposed metal tab for thermal and electrical conduction.
3 - Source	Reference node / return path	Serves as common reference for gate drive and load return; defines V_GS control voltage polarity relative to load ground.

Key Features

Feature	Design Value
Fully avalanche-rated	310 mJ single-pulse E_AS ensures reliable operation under inductive switching stress without external clamping.
Fast switching speed	36 ns rise / 37 ns fall time enables efficient operation up to ~500 kHz in hard-switched topologies.
Low R_DS(on) at -10 V	0.295 Ω reduces conduction losses by >30% vs. legacy P-channel devices at same voltage class.
High-temperature operation	Rated for continuous operation from -55°C to +175°C junction temperature, supporting under-hood and industrial environments.
Integrated body diode	V_SD = -1.6 V at -6.6 A supports freewheeling in half-bridge and buck-derived topologies without discrete diodes.

Applications

Industrial Motor Control

High-Side Load Switch

Use Scenario: Driving brushed DC motors in programmable logic controller (PLC) output modules with bidirectional current control via H-bridge configuration.

IC Role / Device Role / Timing Role: P-channel high-side switch in upper leg of H-bridge; handles -13 A stall current and absorbs inductive kickback during PWM commutation.

Use Value: Avalanche rating eliminates need for external TVS/clamp diodes; R_DS(on) < 0.3 Ω limits power loss to < 5 W at full load, reducing heatsink requirements.

Use Scenario: Enabling/disabling 24 V DC power rails in factory automation I/O cards where hot-swap and fault isolation are required.

IC Role / Device Role / Timing Role: High-side power switch controlled by microcontroller GPIO; operates in linear mode during soft-start and saturated mode during steady-state.

Use Value: Gate threshold (-2.0 to -4.0 V) allows direct drive from 3.3 V or 5 V logic; low leakage (<25 µA) prevents standby current accumulation across large BOMs.

DC-DC Converter Synchronous Rectifier

Overvoltage Protection Circuit

Use Scenario: Secondary-side synchronous rectification in isolated flyback converters delivering 12 V @ 5 A for embedded computing power supplies.

IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode; body diode conducts initial current, then channel turns on to reduce forward drop.

Use Value: V_SD = -1.6 V and R_DS(on) = 0.295 Ω cut conduction losses by ~40% vs. 40 V Schottky, improving efficiency from 82% to 86% at full load.

Use Scenario: Reverse-polarity and overvoltage protection in 48 V telecom power distribution units feeding multiple line cards.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between input and load; configured as active clamp that shuts off during overvoltage events detected by supervisor IC.

Use Value: -150 V V_BRDSS headroom accommodates 48 V nominal systems with 100 V transients; fast turn-off (t_off = 53 ns) prevents latch-up during surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12PF06	V_BRDSS = -60 V, R_DS(on) = 0.22 Ω, TO-220 package	Limited to ≤60 V systems; higher thermal mass but no surface-mount option	Select when lower voltage rating is acceptable and through-hole mechanical robustness is prioritized over compact layout.
IXTP12P15T	V_BRDSS = -150 V, R_DS(on) = 0.32 Ω, TO-220 package, 175°C T_J	Same voltage class but higher R_DS(on); larger footprint and slower switching (t_r = 55 ns)	Choose when legacy TO-220 socket compatibility is mandatory and minor efficiency trade-off is acceptable.

Compared with STP12PF06 and IXTP12P15T, IRFU6215 offers superior voltage margin and faster switching in a compact through-hole package, making it optimal for space-constrained 100–150 V industrial power stages where thermal management and transient robustness are critical.

Availability

IRFU6215 is available at Aetrix Electronics and suitable for industrial motor control, high-side load switching, DC-DC converter synchronous rectification, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IRFU6215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial, automotive, and telecom infrastructure, emphasizing ruggedness, low conduction loss, and fast switching in both N- and P-channel variants.

FAQ

What is the maximum safe operating temperature for IRFU6215?

The IRFU6215 has a maximum junction temperature of +175°C and a storage temperature range of -55°C to +175°C. Its thermal resistance R_θJC is 1.4 °C/W, meaning a 100 W power dissipation would raise junction temperature by 140°C above case temperature - thus limiting continuous use to ≤35°C case temperature for full 110 W rating. Derating curves in Figure 9 confirm -9.0 A maximum current at 100°C case temperature.

Can IRFU6215 be driven directly from a 3.3 V microcontroller GPIO?

No - IRFU6215 requires V_GS ≤ -10 V for guaranteed R_DS(on) = 0.295 Ω operation. Its gate threshold spans -2.0 V to -4.0 V, so a 3.3 V GPIO cannot produce sufficient negative gate drive. A dedicated gate driver (e.g., TC4427 in inverting configuration) or level-shifting circuit is required to generate -10 V to -15 V gate voltage referenced to source potential.

Does IRFU6215 include an integrated body diode, and what are its characteristics?

Yes - IRFU6215 integrates a p-n junction body diode between source and drain. At T_J = 25°C and I_S = -6.6 A, its forward voltage is -1.6 V. Reverse recovery time is 160–240 ns with Q_rr = 1.2–1.7 µC under di/dt = 100 A/µs, making it suitable for moderate-frequency freewheeling but not ultra-high-frequency synchronous rectification without careful layout.

How does the TO-251AA package differ from TO-252AA (DPAK) in practice?

TO-251AA (IRFU series) has straight leads for through-hole mounting, while TO-252AA (IRFR series) has gull-wing leads for surface mounting. Both share identical die, thermal pad geometry, and pinout (G-D-S), but TO-251AA offers higher mechanical retention in vibration-prone environments and simpler hand-soldering. Thermal resistance R_θJA is 110 °C/W for TO-251AA vs. 50 °C/W for TO-252AA on 1"² PCB - indicating greater reliance on heatsinking in through-hole implementations.

IRFU6215 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU6215 FAQ

1.How can I place an order for IRFU6215 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU6215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU6215 reliable?

The price and inventory of IRFU6215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU6215 is usually 5 days.

3.What payment methods are accepted for IRFU6215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU6215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU6215?

IRFU6215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU6215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU6215?

For technical support, including IRFU6215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU6215 requirements.

6.How does Aetrix verify that IRFU6215 is sourced from the original manufacturer or authorized distributors?

All IRFU6215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU6215 meets industry standards.

7.What is the process for return or replacement of IRFU6215?

All IRFU6215 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU6215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU6215 part is unused and in its original packaging.

Return procedure for IRFU6215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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