Infineon Technologies IRFU6215PBF

Overview

IRFU6215PBF from Infineon is a P-channel enhancement-mode HEXFET® Power MOSFET in I-Pak (TO-220AB) through-hole package, rated for -150 V V_BRDSS, 0.295 Ω R_DS(on) at V_GS = -10 V and I_D = -6.6 A, with -13 A continuous drain current at T_C = 25°C. It is fully avalanche-rated (E_AS = 310 mJ), supports fast switching (t_r = 36 ns, t_f = 37 ns), and operates up to +175°C junction temperature - used in industrial DC-DC converters and high-side load switches.

For engineers reviewing the IRFU6215PBF datasheet, IRFU6215PBF pinout, IRFU6215PBF application, or IRFU6215PBF equivalent, key selection criteria include verified -150 V blocking capability, thermal resistance R_θJC = 1.4 °C/W, gate charge Q_g = 66 nC, body diode reverse recovery time t_rr = 160–240 ns, and I-Pak mechanical compatibility with legacy TO-220 footprints.

Technical Context

This P-channel MOSFET employs Infineon's fifth-generation HEXFET process to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its negative threshold voltage (-2.0 to -4.0 V) enables direct logic-level gate drive in high-side configurations without level-shifting circuitry.

The device integrates a fast, low-Q_rr body diode (Q_rr = 1.2–1.7 µC, t_rr = 160–240 ns) and exhibits controlled dv/dt immunity (5.0 V/ns peak diode recovery), making it suitable for synchronous rectification and bidirectional power flow where reverse conduction and turn-off robustness are critical.

Key Specifications

Pinout & Package

I-Pak (TO-220AB) package: insulated tab, straight leads, through-hole mounting; thermal pad electrically connected to drain; requires mechanical isolation from heatsink unless drain is at system ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Compared with IRF9540NPBF and IXTP10P15X, IRFU6215PBF delivers superior voltage margin (-150 V), balanced gate drive efficiency (66 nC), and industry-leading avalanche ruggedness (310 mJ), making it optimal for mission-critical 48–100 V industrial and automotive power stages requiring long-term reliability under transient stress.

Availability

IRFU6215PBF is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC converters, and automotive body electronics requiring stable component supply across extended product lifecycles.

Supply support for IRFU6215PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, automotive, and telecom infrastructure - designed for rugged unclamped switching, thermal stability, and long-term parametric consistency.

FAQ

What is the maximum allowable gate-to-source voltage for IRFU6215PBF?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to -10 V to -15 V for full enhancement, with transient spikes clamped using Zener diodes or active gate clamp circuits to prevent overshoot into the destructive region.

Can IRFU6215PBF be used in parallel configurations?

Yes, but only with careful attention to gate drive matching, source inductance balancing, and thermal coupling. The device's negative R_DS(on) temperature coefficient (-0.20 V/°C) provides inherent current sharing stability, yet mismatched PCB layout or gate resistance can cause current imbalance. Use Kelvin source connections and individual gate resistors for best results.

Is IRFU6215PBF suitable for synchronous rectification in a buck converter?

It is technically capable due to its fast body diode (t_rr = 160–240 ns, Q_rr = 1.2–1.7 µC), but its P-channel topology requires high-side gate drive timing that complicates control. N-channel alternatives are preferred for low-side synchronous rectification; IRFU6215PBF is better suited for high-side switching or OR-ing applications where its polarity is advantageous.

Does IRFU6215PBF require a heatsink in typical operation?

Yes - at I_D ≥ 5 A continuous, a heatsink is mandatory. With R_θJC = 1.4 °C/W and R_θCA ≈ 110 °C/W (PCB mount), even at 3 A the junction temperature exceeds 100°C without thermal management. Use a minimum 25 cm² aluminum heatsink with thermal interface material for operation above 2 A ambient.