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Infineon Technologies IRFU7540PBF

Part No.:
IRFU7540PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU7540PBF.pdf
Description:
MOSFET N-CH 60V 90A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,777

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Product details

Overview

IRFU7540PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 4.0mΩ typ. N-channel enhancement-mode HEXFET® Power MOSFET in I-Pak package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 90A continuous drain current (package-limited), supports synchronous rectification, and features enhanced body diode dV/dt capability up to 11 V/ns at 175°C.

For engineers reviewing the IRFU7540PBF datasheet, IRFU7540PBF pinout, IRFU7540PBF application, or IRFU7540PBF equivalent, key selection criteria include RDS(on) at 6V gate drive, avalanche energy rating (273 mJ), thermal resistance (1.05°C/W junction-to-case), and body diode recovery performance (Qrr = 36 nC at 25°C).

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-free structure to achieve low on-resistance while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.1–3.7V) enables compatibility with 5V and 3.3V logic-level drivers without external level-shifting.

The device integrates a fast, soft-recovery body diode characterized for 66A reverse recovery current and 34ns trr at 25°C, supporting high-frequency resonant topologies and OR-ing applications where reverse conduction and diode recovery dynamics are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60V - Maximum blocking voltage before avalanche onset; suitable for 48V bus systems with margin.
RDS(on) max4.8mΩ @ VGS = 10V, ID = 66A - Enables <1W conduction loss at 66A, reducing heatsink requirements.
ID (package)90A @ TC = 25°C - Real-world continuous current limit defined by leadframe thermal capacity, not silicon.
EAS273mJ - Single-pulse avalanche energy at TJ = 25°C, L = 1mH; supports robust fault handling in bridge circuits.
Qgd27nC - Gate-to-drain charge determines Miller plateau duration and switching speed control in hard-switched converters.
trr34ns @ TJ = 25°C - Fast body diode recovery minimizes switching losses and EMI in synchronous rectifiers.
RθJC1.05°C/W - Low junction-to-case thermal resistance enables direct mounting to heatsinks for high-power density designs.

Pinout & Package

I-Pak package (TO-251AA): surface-mount variant of TO-220 with isolated tab, 3-pin single-ended configuration, designed for PCB thermal relief and automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current path collectorInternally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
Source (S)Current return path / reference nodeLow-inductance connection point for gate driver return and current sensing; defines local ground for gate drive loop.
Gate (G)Control terminalHigh-impedance input requiring <2.4Ω series resistance to damp ringing; sensitive to ESD (±20V absolute max).

Key Features

FeatureDesign Value
Enhanced body diode dV/dt capability11 V/ns at TJ = 175°C - Prevents spurious turn-on during high-speed commutation in half-bridge configurations.
Fully characterized avalanche SOA273 mJ single-pulse rating with validated waveforms (Fig. 23a/b) - Enables reliable operation under unclamped inductive load faults.
Low Qgd/Qg ratio27nC / 86nC = 0.31 - Improves controllability during Miller region, reducing risk of shoot-through in bridge topologies.
Lead-free, RoHS-compliant constructionMeets JEDEC J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow without preconditioning or baking.

Applications

Brushed Motor DriveBLDC Motor Drive

Use Scenario: H-bridge control of 24–48V DC motors in power tools and automotive accessories.

IC Role / Device Role / Timing Role: High-side and low-side switching element with bidirectional current handling via body diode during PWM freewheeling.

Use Value: 4.8mΩ RDS(on) limits I²R loss to ≤30W at 85A peak, enabling compact thermal design without forced air cooling.

Use Scenario: Six-step commutation in 3-phase BLDC inverters for e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switch in inverter leg; body diode conducts reverse current during dead-time intervals.

Use Value: 34ns trr and 11 V/ns dV/dt rating suppress voltage spikes and reduce snubber losses at 20kHz switching frequency.

Synchronous RectificationOR-ing Power Switch

Use Scenario: Secondary-side switching in isolated 48V→12V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode; driven synchronously with primary-side controller timing.

Use Value: 4.0mΩ RDS(on) cuts conduction loss by >60% vs. 40V Schottky, improving full-load efficiency from 92% to 94.5%.

Use Scenario: Redundant 12V/24V power supply combining in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Unidirectional power path controller; blocks reverse current while conducting forward with minimal drop.

Use Value: VSD = 1.2V at 66A ensures <80mV forward drop when paralleled with ideal diode controllers, minimizing insertion loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP90NF03L30V VDSS, 4.5mΩ RDS(on), TO-220 packageLimited to ≤24V systems; lacks 60V margin for transient suppressionSelect only if operating voltage stays below 20V and board space allows larger TO-220 footprint.
IXTP75N06T60V VDSS, 6.2mΩ RDS(on), TO-220 package, higher Qg (110nC)Higher switching loss due to 28% greater gate charge; no specified avalanche energy ratingAcceptable for lower-frequency (<50kHz) linear-regulated supplies where avalanche robustness is secondary.

Compared with STP90NF03L and IXTP75N06T, IRFU7540PBF provides superior 60V system margin, lowest RDS(on) in its class, and fully validated avalanche performance-making it optimal for high-reliability motor drives and synchronous rectifiers where voltage transients and diode recovery are critical.

Availability

IRFU7540PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectification circuits requiring stable component supply across industrial and transportation OEM programs.

Supply support for IRFU7540PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's power MOSFET legacy.

The StrongIRFET™ product line delivers rugged, high-current discrete MOSFETs engineered for demanding motor control, power conversion, and industrial switching applications where avalanche reliability and thermal performance are non-negotiable.

FAQ

What is the maximum allowable gate-source voltage for IRFU7540PBF?

The absolute maximum VGS rating is ±20V. Operation beyond this risks irreversible gate oxide breakdown. For reliable 3.3V or 5V logic-level drive, ensure gate driver output clamping and avoid floating gate conditions during power sequencing. Transient overshoot must be limited using RC snubbers or Zener clamps.

Can IRFU7540PBF be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (see Fig. 6) enables inherent current sharing. Successful paralleling requires matched layout: identical trace lengths, symmetric gate drive paths with individual 2.7Ω resistors, and shared source Kelvin sensing. Thermal coupling between devices must be minimized to prevent thermal runaway.

Does IRFU7540PBF support 6V gate drive in high-current applications?

Yes-RDS(on) is specified at 5.2mΩ max with VGS = 6V and ID = 33A. At full 90A, conduction loss increases ~30% versus 10V drive, but remains viable for space-constrained designs using logic-level gate drivers. Ensure gate driver can source ≥2A peak to charge 86nC gate capacitance rapidly.

Is the I-Pak package thermally compatible with standard TO-220 heatsinks?

No-the I-Pak (TO-251AA) has a smaller outline and non-isolated tab geometry incompatible with TO-220 clip-on heatsinks. It requires dedicated PCB copper pour (≥1"² FR-4) or custom heatsink interfaces with thermal interface material. Mounting torque must not exceed 0.5 N·m to avoid package cracking.

IRFU7540PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®, StrongIRFET™
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 66A, 10V
Vgs(th) (Max) @ Id:
3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
140W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU7540PBF FAQ

1.How can I place an order for IRFU7540PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU7540PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU7540PBF reliable?

The price and inventory of IRFU7540PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU7540PBF is usually 5 days.

3.What payment methods are accepted for IRFU7540PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU7540PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU7540PBF?

IRFU7540PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU7540PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU7540PBF?

For technical support, including IRFU7540PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU7540PBF requirements.

6.How does Aetrix verify that IRFU7540PBF is sourced from the original manufacturer or authorized distributors?

All IRFU7540PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU7540PBF meets industry standards.

7.What is the process for return or replacement of IRFU7540PBF?

All IRFU7540PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU7540PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU7540PBF part is unused and in its original packaging.

Return procedure for IRFU7540PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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