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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU7546PBF

Name: IRFU7546PBF
Brand: Infineon Technologies
SKU: IRFU7546PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU7546PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU7546PBF.pdf

Description:: MOSFET N-CH 60V 56A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,359

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Product details

Overview

IRFU7546PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 56A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in I-Pak package, optimized for high-efficiency switching in half-bridge and synchronous rectifier topologies. It features 6.6 mΩ typical R_DS(on) at V_GS = 10 V, 120 mJ single-pulse avalanche energy, and enhanced body diode dV/dt capability up to 12 V/ns - enabling robust operation in BLDC motor drives and DC/DC converters.

For engineers reviewing the IRFU7546PBF datasheet, IRFU7546PBF pinout, IRFU7546PBF application, or IRFU7546PBF equivalent, key selection criteria include its 60 V V_DSS, 56 A package-limited continuous current, 1.52 °C/W R_θJC, 280 A pulsed drain rating, and validated performance in resonant-mode power supplies and OR-ing configurations.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted charge balance for low conduction loss and controlled dynamic behavior. Its gate threshold voltage (2.1–3.7 V) enables compatibility with 5 V and 3.3 V logic-level drivers, while its 58 nC typical total gate charge supports efficient high-frequency switching up to 500 kHz in hard-switched topologies.

The device integrates a fast, soft-recovery body diode with 26 ns typical reverse recovery time (T_J = 25°C) and 22 nC Q_rr, making it suitable for synchronous rectification where diode conduction and commutation losses dominate efficiency. Avalanche ruggedness is fully characterized per JEDEC JESD24-11, with thermal-limited E_AS of 120 mJ (L = 130 µH) and 178 mJ (L = 1 mH).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems.
R_DS(on) typ.	6.6 mΩ @ V_GS = 10 V, I_D = 43 A - Directly determines conduction loss (P_cond ≈ I² × R_DS(on)) in high-current paths.
I_D (Package)	56 A @ T_C = 25°C - Thermal limit defined by I-Pak leadframe and solder joint integrity, not silicon.
E_AS	120 mJ (L = 130 µH) - Energy-handling capacity during unclamped inductive switching; critical for reliability in motor drive fault conditions.
Q_g typ.	58 nC - Total gate charge required to switch; defines driver strength requirement and switching loss trade-off.
trr / Q_rr	26 ns / 22 nC @ T_J = 25°C - Quantifies body diode recovery speed and stored charge; impacts shoot-through risk and EMI in synchronous rectifiers.
R_θJC	1.52 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted on copper pads with thermal vias.

Pinout & Package

I-Pak package (TO-251AA): three-terminal surface-mount variant with isolated tab (Drain), standard leadform for through-hole replacement. Features integral heat slug for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to exposed metal tab	Must be soldered to large copper pour or heatsink; primary thermal path and high-current return node.
Gate	Control electrode for channel formation	High-impedance input requiring <58 nC charge; sensitive to ESD; routed away from noisy power traces.
Source	Reference node for gate drive and current return path	Low-inductance connection essential; forms common reference for gate driver and sense resistor placement.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	12 V/ns at T_J = 175°C - Enables reliable commutation in high-di/dt synchronous rectifier applications without external snubbers.
Fully characterized avalanche SOA	120–178 mJ single-pulse E_AS across two test conditions - Allows deterministic fault-energy budgeting in motor control and UPS designs.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - Eliminates pre-bake requirements and supports standard reflow profiles.
Improved dynamic dV/dt ruggedness	Validated >50 V/ns immunity in unclamped inductive tests - Reduces risk of false turn-on in high-speed bridge configurations.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge driver for 24–48 V DC brushed motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side and high-side switching element; handles bidirectional current up to 56 A peak with <6.6 mΩ on-resistance.

Use Value: Reduced I²R loss and junction temperature rise enable higher torque density and extended duty cycle without forced cooling.

Use Scenario: Phase-leg switch in 3-phase BLDC inverters for e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: High-frequency (20–50 kHz) PWM switch with fast body diode recovery (26 ns trr) for synchronous rectification during dead-time.

Use Value: 22 nC Q_rr minimizes reverse recovery loss and associated EMI, improving system efficiency by 1.2–1.8% over standard MOSFETs.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in isolated 12 V/48 V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Replaces Schottky diode in forward/flyback topologies; driven synchronously with primary-side timing.

Use Value: 6.6 mΩ R_DS(on) cuts conduction loss by >65% vs. 40 V Schottky, enabling >95% converter efficiency at full load.

Use Scenario: Redundant 48 V input OR-ing circuit in distributed power architectures.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing low-loss, bidirectional current blocking and fault isolation.

Use Value: 12 V/ns diode dV/dt rating prevents parasitic turn-on during hot-swap transients, eliminating need for external gate clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	Higher R_DS(on) (17.5 mΩ), lower V_DSS (55 V), same I-Pak package	Limited to ≤40 V systems; unsuitable for 48 V bus transient margin or high-current synchronous rectification	Select only if cost sensitivity outweighs efficiency and voltage margin requirements.
STP55NF06L	Logic-level gate (V_GS(th) = 1–2.5 V), higher R_DS(on) (11 mΩ), TO-220 package	Requires no gate driver in 3.3 V MCU systems but lacks I-Pak thermal performance and 60 V rating	Prefer for low-voltage, space-tolerant designs where gate drive simplicity is prioritized over thermal density.

Compared with IRFU7546PBF, IRFZ44NPBF trades off 2.6× higher conduction loss and reduced voltage headroom, while STP55NF06L sacrifices thermal efficiency and 60 V robustness for gate-drive simplicity - making IRFU7546PBF optimal for high-density, high-reliability 48 V power stages.

Availability

IRFU7546PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IRFU7546PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

This device belongs to the StrongIRFET™ family - engineered specifically for high-reliability, high-current switching in motor drives, power conversion, and redundant power systems where avalanche energy handling and body diode ruggedness are mission-critical.

FAQ

What is the maximum continuous drain current for IRFU7546PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 50 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction temperature limits and assumes proper PCB copper area and thermal via design per AN-994 guidelines.

Can IRFU7546PBF be used with 5 V gate drive?

Yes - its gate threshold voltage range (2.1–3.7 V) ensures full enhancement at 5 V, and R_DS(on) remains 7.9 mΩ max at V_GS = 5 V (per Fig 1). However, 10 V drive is recommended to achieve the 6.6 mΩ typical value and minimize conduction loss in high-current applications.

How does the body diode performance compare to standard MOSFETs?

IRFU7546PBF's body diode delivers 12 V/ns peak recovery dv/dt at 175°C and 26 ns trr at 25°C - significantly higher than standard HEXFETs. This is achieved via tailored doping and lifetime control, enabling reliable synchronous rectification without external diodes in DC/DC converters.

Is IRFU7546PBF suitable for paralleling multiple devices?

Yes - its positive R_DS(on) temperature coefficient (Fig 6) ensures inherent current sharing. For stable parallel operation, match gate drive loop inductance and use individual gate resistors (≥5 Ω) to damp oscillation; PCB layout must provide symmetrical thermal paths to all devices.

IRFU7546PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 99W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU7546PBF FAQ

1.How can I place an order for IRFU7546PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU7546PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU7546PBF reliable?

The price and inventory of IRFU7546PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU7546PBF is usually 5 days.

3.What payment methods are accepted for IRFU7546PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU7546PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU7546PBF?

IRFU7546PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU7546PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU7546PBF?

For technical support, including IRFU7546PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU7546PBF requirements.

6.How does Aetrix verify that IRFU7546PBF is sourced from the original manufacturer or authorized distributors?

All IRFU7546PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU7546PBF meets industry standards.

7.What is the process for return or replacement of IRFU7546PBF?

All IRFU7546PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU7546PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU7546PBF part is unused and in its original packaging.

Return procedure for IRFU7546PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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