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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU7740PBF

Name: IRFU7740PBF
Brand: Infineon Technologies
SKU: IRFU7740PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU7740PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU7740PBF.pdf

Description:: MOSFET N-CH 75V 87A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFU7740PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 87A N-channel enhancement-mode HEXFET® Power MOSFET in I-Pak package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 6.0 mΩ typical R_DS(on) at V_GS = 10 V, supports 330 A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification.

For engineers reviewing the IRFU7740PBF datasheet, IRFU7740PBF pinout, IRFU7740PBF application, or IRFU7740PBF equivalent, key selection criteria include its 75 V V_BR(DSS), 1.05 °C/W R_θJC, 84 nC total gate charge, avalanche-rated 160 mJ E_AS, and suitability for half-bridge topologies with fast 36 ns rise time and 30 ns fall time.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region to achieve low on-resistance while maintaining rugged unclamped inductive switching performance. Its gate threshold voltage (2.1–3.7 V) enables direct drive from 5 V logic controllers, and its 230 pF Crss ensures stable operation under high dV/dt conditions up to 12 V/ns.

The device integrates a fast, soft-recovery body diode with 35 ns reverse recovery time (T_J = 25°C) and 45 nC Q_rr, enabling efficient OR-ing and resonant-mode operation without external Schottky supplementation. Thermal design is supported by validated transient impedance curves and SOA-limited operation up to 175°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	75 V - Withstands 75 V drain-source blocking voltage before avalanche conduction begins; rated at 250 µA leakage.
R_DS(on) typ.	6.0 mΩ - Enables <1 W conduction loss at 52 A continuous current with 10 V gate drive; critical for thermal management in high-current PCB layouts.
I_D @ T_C = 25°C	87 A - Maximum continuous silicon-limited drain current at case temperature of 25°C; defines steady-state power handling in heatsink-mounted designs.
Q_g max	126 nC - Total gate charge required to fully switch the device; determines driver strength requirement and switching loss in hard-switched topologies.
E_AS	160 mJ - Single-pulse avalanche energy rating at T_J = 25°C; allows safe operation during inductive turn-off transients without external snubbers.
t_r/t_f	36 ns / 30 ns - Rise and fall times measured at V_DD = 38 V, I_D = 52 A; enables >1 MHz switching in resonant converters with controlled EMI.
V_SD	1.2 V - Forward voltage of integrated body diode at I_S = 52 A and T_J = 25°C; impacts conduction loss in synchronous rectifier and bidirectional power flow applications.

Pinout & Package

I-Pak package (TO-251AA), surface-mountable with isolated tab, featuring three terminals: Gate (G), Drain (D), and Source (S). The drain-connected tab provides low-inductance thermal path to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–20 V gate-to-source voltage; 2.2 Ω internal gate resistance limits ringing and simplifies driver design.
D	Drain (high-side switch node)	Connected to drain metallization and exposed tab; carries full load current and must be routed with low-inductance layout for EMI control.
S	Source (return path)	Reference node for gate drive and current sensing; ties directly to power ground plane to minimize common-source inductance.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	12 V/ns peak recovery dv/dt at T_J = 175°C - prevents false turn-on during high-speed commutation in bridge legs.
Fully characterized avalanche SOA	160 mJ single-pulse E_AS with thermal-limited failure mode - eliminates need for external clamping in brushed motor H-bridge flyback events.
Low C_oss eff. (TR)	440 pF - reduces turn-off loss and improves zero-voltage switching (ZVS) margin in LLC and phase-shifted full-bridge converters.
Lead-free, RoHS-compliant construction	Meets JEDEC J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without popcorn cracking or delamination.
Improved dynamic dV/dt ruggedness	Validated >50 V/ns immunity in unclamped inductive test - ensures reliable operation in noisy industrial motor drive environments.

Applications

Brushed DC Motor Drive

BLDC Inverter Half-Bridge

Use Scenario: High-torque 24–48 V brushed motor control in cordless power tools and automotive seat adjusters.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, conducting up to 87 A continuous with PWM frequencies up to 20 kHz.

Use Value: 6.0 mΩ R_DS(on) minimizes I²R heating during stall conditions; 330 A pulsed rating handles startup surges without derating.

Use Scenario: Upper and lower switches in 3-phase BLDC inverter for e-bike controllers and HVAC blowers.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switching element in half-bridge leg, operating with 100 ns dead-time control.

Use Value: 35 ns t_rr and soft-recovery body diode reduce shoot-through risk and eliminate need for external freewheeling diodes.

Synchronous Rectifier in DC/DC

OR-ing Power Switch

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck-derived converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Replacement for Schottky diode in forward converter secondary, driven by transformer-coupled gate signal.

Use Value: 1.2 V V_SD and 6.0 mΩ R_DS(on) cut conduction losses by >40% vs. 40 V Schottky, improving efficiency above 94% at full load.

Use Scenario: Redundant 12 V power supply OR-ing in industrial PLC backplanes and medical power modules.

IC Role / Device Role / Timing Role: Unidirectional power path controller with fast reverse recovery to prevent backfeed during hot-swap events.

Use Value: 12 V/ns dv/dt rating and 2.3 A I_RRM ensure clean turn-off during supply switchover without bus droop or latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 V V_BR(DSS), 75 A I_D, 10.5 mΩ R_DS(on) - higher on-resistance and lower current rating.	Less suitable for 87 A continuous loads; requires larger heatsink in motor drive applications.	Select when cost sensitivity outweighs thermal performance and board space is constrained by TO-220 footprint.
IXTP75N075	75 V V_BR(DSS), 75 A I_D, 9.0 mΩ R_DS(on), 140 nC Q_g - higher gate charge increases driver complexity.	Slower switching (t_r = 50 ns) limits use in >500 kHz ZVS topologies.	Prefer for linear-regulator-style applications where gate drive simplicity matters more than switching speed.

Compared with STP75NF75 and IXTP75N075, IRFU7740PBF offers the lowest R_DS(on) and highest pulsed current capability in I-Pak, making it optimal for compact, high-efficiency motor and converter designs where thermal headroom and transient robustness are critical.

Availability

IRFU7740PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial OEM production cycles.

Supply support for IRFU7740PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's power MOSFET innovation.

This device belongs to the StrongIRFET™ family, engineered specifically for high-reliability, high-current switching in motor control and power conversion systems demanding rugged avalanche performance and fast body diode recovery.

FAQ

What is the maximum allowable gate-to-source voltage for IRFU7740PBF?

The absolute maximum V_GS is ±20 V per the datasheet. Operation beyond ±20 V risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, especially in high-noise motor drive environments.

Can IRFU7740PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <10°C ΔT_J between devices.

Is the body diode suitable for continuous reverse conduction?

The integrated body diode is rated for continuous source current up to 87 A at T_C = 25°C, matching the MOSFET's drain current rating. However, its 1.2 V forward drop and 35 ns t_rr make it appropriate for synchronous rectification but not for high-frequency freewheeling without careful thermal design.

Does IRFU7740PBF require a gate resistor for stability?

A gate resistor (typically 2.7–10 Ω) is recommended to dampen gate ringing caused by PCB inductance and driver output impedance. The device's 2.2 Ω internal gate resistance helps, but external series resistance ensures controlled turn-on/turn-off timing and reduces EMI in high-dV/dt applications like motor drives.

IRFU7740PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 126 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU7740PBF FAQ

1.How can I place an order for IRFU7740PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU7740PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU7740PBF reliable?

The price and inventory of IRFU7740PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU7740PBF is usually 5 days.

3.What payment methods are accepted for IRFU7740PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU7740PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU7740PBF?

IRFU7740PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU7740PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU7740PBF?

For technical support, including IRFU7740PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU7740PBF requirements.

6.How does Aetrix verify that IRFU7740PBF is sourced from the original manufacturer or authorized distributors?

All IRFU7740PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU7740PBF meets industry standards.

7.What is the process for return or replacement of IRFU7740PBF?

All IRFU7740PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU7740PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU7740PBF part is unused and in its original packaging.

Return procedure for IRFU7740PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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