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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU9024N

Name: IRFU9024N
Brand: Infineon Technologies
SKU: IRFU9024N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU9024N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU9024N.pdf

Description:: MOSFET P-CH 55V 11A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,188

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Product details

Overview

IRFU9024N from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) package, rated for -55 V V(BR)DSS, 0.175 Ω RDS(on) at VGS = -10 V, -11 A continuous drain current at TC = 25°C, and fully avalanche-rated to 62 mJ. It serves as a high-efficiency, surface-mount or through-hole power switch in DC-DC converters and load switching circuits.

For engineers reviewing the IRFU9024N datasheet, IRFU9024N pinout, IRFU9024N application, or IRFU9024N equivalent, key selection criteria include its P-channel polarity, low on-resistance at standard gate drive, fast switching (tr = 55 ns, tf = 37 ns), avalanche ruggedness, and thermal resistance of 3.3 °C/W junction-to-case - critical for thermally constrained industrial and automotive power stages.

Technical Context

The IRFU9024N employs fifth-generation HEXFET process technology to achieve ultra-low RDS(on) per die area while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V logic-level drive and supports partial gate control in linear-mode applications.

Designed for bidirectional blocking and synchronous rectification in buck converters, it integrates a fast body diode with trr = 47–71 ns and Qrr = 84–130 nC. The device's 19 nC total gate charge and 10 nC Miller charge enable efficient high-frequency switching up to several hundred kHz without excessive driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-55 V: Maximum reverse-blocking voltage before avalanche onset; defines upper limit for DC bus or input voltage rating.
RDS(on)	0.175 Ω @ VGS = -10 V, ID = -6.6 A: Low conduction loss enabling <1.2 W dissipation at 7 A DC load current.
ID (TC = 25°C)	-11 A: Continuous drain current rating under heatsinked conditions; usable up to ~8 A at 100°C case temperature.
EAS	62 mJ: Single-pulse avalanche energy capacity; allows reliable operation during inductive turn-off transients without failure.
Qg / Qgd	19 nC / 10 nC: Gate charge profile dictates driver strength requirement; Miller charge dominates switching transition timing.
tr / tf	55 ns / 37 ns @ VDD = -28 V, ID = -7.2 A: Fast edge rates support >500 kHz PWM operation with minimal switching loss.
RθJC	3.3 °C/W: Junction-to-case thermal resistance enables direct heatsinking; permits ~11 W power dissipation with 36°C rise above case.

Pinout & Package

IRFU9024N uses the TO-252AA (D-Pak) package: surface-mount variant with exposed drain pad for thermal and electrical connection. Leads are straight (through-hole compatible), with lead 1 = Gate, lead 2 = Drain, lead 3 = Source, lead 4 = Drain (dual-drain configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives negative gate drive relative to source; threshold range (-2.0 to -4.0 V) requires stable -10 V bias for full enhancement.
2 & 4 (Drain)	High-side current return path	Dual-drain configuration lowers inductance and improves current sharing; connected internally to exposed copper pad for thermal conduction.
3 (Source)	Reference node for gate drive	Serves as common return for load current and gate control loop; must be routed with low inductance to minimize ringing during switching.

Key Features

Feature	Design Value
Ultra-low RDS(on)	0.175 Ω enables <1.3 W conduction loss at 7.5 A, reducing thermal footprint in compact power modules.
Fully avalanche-rated	62 mJ single-pulse energy rating eliminates need for external snubbers in inductive load switching applications.
Fast body diode	trr = 47–71 ns and Qrr = 84–130 nC support synchronous rectification in high-frequency buck converters.
TO-252AA dual-drain layout	Leads 2 and 4 both connect to drain, lowering package inductance and improving EMI performance in high-dI/dt switching.

Applications

Motor Control H-Bridge

Industrial Load Switch

Use Scenario: High-side switch in half-bridge motor driver for 24–48 V DC brushed motors.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage rail; operates in hard-switched PWM mode at 20–100 kHz.

Use Value: Low RDS(on) minimizes I²R heating during 10 A peak loads; avalanche rating absorbs back-EMF spikes during motor commutation.

Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules.

IC Role / Device Role / Timing Role: DC load switch enabling/disabling 24 V solenoid or indicator loads with fast turn-on/turn-off.

Use Value: 37 ns fall time ensures clean load deactivation; -55 V rating accommodates 40 V supply transients per IEC 61000-4-5.

Buck Converter Synchronous Rectifier

Automotive Body Control Module

Use Scenario: Low-side synchronous rectifier in 12 V input, 5 V/10 A step-down converter.

IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode; driven complementary to high-side N-MOSFET.

Use Value: Body diode Qrr = 84–130 nC reduces reverse recovery loss; RDS(on) cuts conduction loss by >60% vs. 40 V Schottky.

Use Scenario: Window lift or mirror adjustment driver in 12 V automotive systems.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch interfacing microcontroller GPIO to motor load.

Use Value: -55 V V(BR)DSS withstands load dump events up to +35 V; TJ = -55 to +150 °C rating meets AEC-Q101 ambient requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z24NPBF	V(BR)DSS = -55 V, RDS(on) = 0.28 Ω @ -10 V, TO-220 package	Larger footprint and higher thermal resistance (RθJC = 6.2 °C/W); suited for lower-current, heatsink-mounted designs	Select when board space allows TO-220 and thermal design includes bolt-down heatsink.
SI2305DS-T1-E3	V(BR)DSS = -30 V, RDS(on) = 0.055 Ω @ -4.5 V, SOT-23 package	Lower voltage rating and smaller current handling (-4.1 A); optimized for logic-level drive in space-constrained portable devices	Select for 3.3 V/5 V control interfaces and sub-3 A loads where ultra-small footprint is mandatory.

Compared with IRFU9024N, IRF9Z24NPBF trades lower cost and higher ruggedness for larger size and reduced efficiency at high current, while SI2305DS-T1-E3 offers superior gate-drive compatibility at the expense of voltage margin and thermal headroom.

Availability

IRFU9024N is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, DC-DC power supplies, and programmable logic controller (PLC) output stages requiring stable component supply and long-term manufacturability.

Supply support for IRFU9024N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

The IRFU9024N belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability, high-efficiency discrete power switching in industrial, automotive, and computing power conversion systems.

FAQ

Is IRFU9024N suitable for logic-level gate drive?

No - IRFU9024N has a gate threshold voltage range of -2.0 V to -4.0 V and is specified for full enhancement at VGS = -10 V. While it may partially turn on at -5 V, RDS(on) rises significantly above 0.5 Ω, increasing conduction loss. For true logic-level operation, consider devices like SI2305DS-T1-E3 with VGS(th) down to -1.0 V.

What is the maximum recommended PCB copper area for thermal relief?

When mounted on a 1" square FR-4 PCB, RθJA is 50 °C/W. To improve thermal performance, use ≥250 mm² (0.4 in²) of 2-oz copper connected directly to the drain pad via multiple thermal vias. This can reduce RθJA to ~35 °C/W, supporting ~12 W continuous dissipation at 25°C ambient.

Can IRFU9024N replace IRF9Z24N in existing designs?

Yes - IRFU9024N shares identical electrical specifications with IRF9Z24N but uses the TO-252AA package instead of TO-220. Pinout differs (TO-252AA: G-D-S-D; TO-220: G-D-S), so PCB layout and thermal interface must be revised. Electrical behavior, SOA, and avalanche rating are functionally equivalent.

Does IRFU9024N require a gate resistor for stability?

Yes - a series gate resistor (typically 10–47 Ω) is recommended to dampen gate-source oscillation caused by trace inductance and device capacitance. Without it, ringing exceeding ±20 V can occur during fast switching, risking gate oxide damage or false turn-on due to dv/dt coupling.

IRFU9024N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU9024N FAQ

1.How can I place an order for IRFU9024N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9024N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9024N reliable?

The price and inventory of IRFU9024N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9024N is usually 5 days.

3.What payment methods are accepted for IRFU9024N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9024N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9024N?

IRFU9024N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9024N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9024N?

For technical support, including IRFU9024N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9024N requirements.

6.How does Aetrix verify that IRFU9024N is sourced from the original manufacturer or authorized distributors?

All IRFU9024N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9024N meets industry standards.

7.What is the process for return or replacement of IRFU9024N?

All IRFU9024N units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9024N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9024N part is unused and in its original packaging.

Return procedure for IRFU9024N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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