Infineon Technologies IRFU9120N
- Part No.:
- IRFU9120N
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IRFU9120N.pdf
- Description:
- MOSFET P-CH 100V 6.6A IPAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRFU9120N from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-251AA (I-Pak) package, rated for -100V VDS, 0.48Ω RDS(on) at VGS = -10V, and -6.6A continuous drain current at TC = 25°C. It features fully avalanche-rated operation, fast switching (tr = 47ns, tf = 31ns), and is designed for through-hole mounting in DC-DC converters and motor control circuits.
For engineers reviewing the IRFU9120N datasheet, IRFU9120N pinout, IRFU9120N application, or IRFU9120N equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0V), low gate charge (Qg = 27nC), body diode forward voltage (-1.6V at -3.9A), and junction-to-ambient thermal resistance of 110°C/W in free-air mounting.
Technical Context
This P-channel MOSFET operates with gate drive referenced to source, requiring negative VGS for turn-on. Its ruggedized construction supports unclamped inductive switching with single-pulse avalanche energy up to 100mJ and repetitive avalanche rating of 4.0mJ.
The device uses fifth-generation HEXFET processing for low on-resistance per die area and integrates a fast-recovery body diode (trr = 100–150ns, Qrr = 420–630nC), enabling efficient synchronous rectification and high-side switch applications where reverse recovery performance is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100V - Maximum blocking voltage in high-side switch or reverse polarity protection configurations |
| RDS(on) | 0.48Ω @ VGS = -10V - Low conduction loss enabling <1W dissipation at 4.5A continuous load |
| ID (continuous) | -6.6A @ TC = 25°C - Supports medium-power loads such as 12V/24V industrial motor drivers |
| Qg | 27nC - Enables efficient gate driving with standard logic-level or discrete gate drivers |
| tr/tf | 47ns/31ns - Fast edge rates reduce switching losses in PWM frequencies up to 200kHz |
| EAS | 100mJ - Withstands unclamped inductive energy during fault conditions without failure |
| VGS(th) | -2.0 to -4.0V - Ensures reliable turn-on with standard -5V/-12V gate drive rails |
Pinout & Package
IRFU9120N is housed in TO-251AA (I-Pak) package - a three-lead, through-hole variant of the D-Pak family, with leads bent vertically for PCB insertion and soldering. The exposed drain pad provides mechanical stability and thermal path to the board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | Receives negative VGS to modulate channel conductivity; high input impedance minimizes driver current demand |
| 2 - Drain | High-side power terminal | Connected to positive rail in high-side switch; electrically tied to exposed metal tab for thermal conduction |
| 3 - Source | Reference node | Serves as return path and gate reference; determines common-mode voltage for gate drive circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | Withstands 100mJ single-pulse and 4.0mJ repetitive avalanche energy without degradation |
| Ultra-low RDS(on) | 0.48Ω enables <1.5W conduction loss at 6A, reducing heatsink requirements |
| Fast body diode | 100–150ns reverse recovery time and 420–630nC Qrr support high-frequency synchronous rectification |
| P-channel topology | Enables high-side switching without level-shifting gate drivers in 12V/24V systems |
| TO-251AA through-hole package | Provides robust mechanical retention and improved thermal transfer vs. SO-8 or SOT-23 alternatives |
Applications
| Reverse Polarity Protection | High-Side Load Switch |
|---|---|
Use Scenario: Input protection for 12V/24V automotive ECUs and industrial controllers against battery misconnection. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between supply and system ground return. Use Value: Blocks reverse current flow with <0.5V drop at full load, eliminating need for bulky Schottky diodes. | Use Scenario: Controlled power-up sequencing for microcontroller peripherals and sensor subsystems. IC Role / Device Role / Timing Role: High-side switch enabling precise enable/disable timing via microcontroller GPIO. Use Value: Delivers clean power ramp with no shoot-through risk and minimal inrush due to controlled VGS slew rate. |
| DC-DC Converter Sync Rectifier | Brushed DC Motor H-Bridge |
Use Scenario: Secondary-side rectification in isolated flyback or forward converters operating at 100–200kHz. IC Role / Device Role / Timing Role: Synchronous rectifier replacing output Schottky diode to improve efficiency. Use Value: Reduces conduction loss by >60% vs. 40V Schottky, increasing converter efficiency from 82% to 87% at 5A load. | Use Scenario: Low-side switch in one quadrant of an H-bridge driving 12V brushed motors in robotics and actuators. IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel high-side devices. Use Value: Provides matched RDS(on) and thermal profile with IRF9520N-based designs, simplifying layout and thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9520PBF | VDS = -100V, RDS(on) = 0.60Ω @ -10V, TO-220 package | Higher thermal resistance (65°C/W junction-to-case), requires heatsink for >3A operation | Select when board space allows TO-220 mounting and higher peak current capability is needed |
| IRFR9120N | Identical electrical specs, but in surface-mount TO-252AA (D-Pak) package | No through-hole leads; optimized for automated assembly and lower profile | Select for PCB space-constrained designs requiring reflow compatibility and reduced height |
Compared with IRF9520PBF, IRFU9120N offers lower RDS(on) and through-hole reliability; compared with IRFR9120N, it trades SMT efficiency for mechanical robustness and manual repairability in prototyping and field-serviceable equipment.
Availability
IRFU9120N is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, DC-DC converter synchronous rectification, and brushed DC motor control requiring stable component supply across automotive, industrial, and embedded power systems.
Supply support for IRFU9120N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial and automotive markets.
The HEXFET® product line was engineered for rugged, high-reliability power switching - emphasizing low RDS(on), fast switching, and avalanche survivability in harsh environments like engine control units and factory automation.
FAQ
What is the maximum safe operating temperature for IRFU9120N?
The IRFU9120N has a maximum junction temperature of +150°C and a storage temperature range of -55°C to +150°C. Its thermal resistance is 110°C/W (junction-to-ambient, free-air), so continuous operation at full -6.6A requires careful thermal design - typically limiting ambient temperature to ≤50°C without heatsinking or PCB copper area.
Can IRFU9120N be driven directly from a 3.3V microcontroller GPIO?
No - its gate threshold voltage ranges from -2.0V to -4.0V, and full enhancement requires VGS ≤ -10V. A 3.3V GPIO cannot produce the necessary negative gate-source potential. A dedicated gate driver (e.g., TC4427 with inverting configuration) or level-shifting circuit is required for reliable turn-on.
Does IRFU9120N include integrated ESD protection?
No - the device lacks on-chip ESD protection structures. Gate oxide is sensitive to electrostatic discharge; external Zener clamps (e.g., 12V TVS between gate and source) and strict handling protocols (grounded workstations, anti-static packaging) are mandatory during assembly and testing.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = -1.6V at -3.9A and trr = 100–150ns, making it slower and higher-drop than most Schottkys. It is suitable for non-critical freewheeling but not recommended for high-efficiency synchronous rectification unless gate timing precisely controls conduction to minimize diode conduction time.
IRFU9120N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 480mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK (TO-251AA)
IRFU9120N FAQ
1.How can I place an order for IRFU9120N through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFU9120N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFU9120N reliable?
The price and inventory of IRFU9120N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9120N is usually 5 days.
3.What payment methods are accepted for IRFU9120N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9120N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFU9120N?
IRFU9120N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFU9120N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFU9120N?
For technical support, including IRFU9120N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9120N requirements.
6.How does Aetrix verify that IRFU9120N is sourced from the original manufacturer or authorized distributors?
All IRFU9120N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9120N meets industry standards.
7.What is the process for return or replacement of IRFU9120N?
All IRFU9120N units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9120N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFU9120N part is unused and in its original packaging.
Return procedure for IRFU9120N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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