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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU9120NPBF

Name: IRFU9120NPBF
Brand: Infineon Technologies
SKU: IRFU9120NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU9120NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU9120NPBF.pdf

Description:: MOSFET P-CH 100V 6.6A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,232

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Product details

Overview

IRFU9120NPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, rated for –100 V V_DS, –9.8 A I_D (T_C = 25°C), and 0.28 Ω R_DS(on) at V_GS = –10 V. It serves as a high-side load switch or DC-DC synchronous rectifier in industrial power supplies and motor control circuits.

For engineers reviewing the IRFU9120NPBF datasheet, IRFU9120NPBF pinout, IRFU9120NPBF application, or IRFU9120NPBF equivalent, key selection criteria include its negative gate threshold (–2.0 to –4.0 V), low gate charge (Q_G = 37 nC), avalanche-rated ruggedness (E_AS = 120 mJ), and lead-free D-Pak thermal performance for board-level power switching.

Technical Context

This MOSFET employs a planar stripe cell structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate oxide is qualified for ±20 V V_GS operation, with guaranteed turn-on at –4.5 V and full enhancement by –10 V.

The device features an integrated body diode with t_rr = 120 ns (I_F = –9.8 A, di/dt = 100 A/µs) and V_SD = –1.7 V at –9.8 A, enabling bidirectional current handling in H-bridge and reverse polarity protection applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–100 V - Maximum blocking voltage in high-side switch configurations without derating up to T_J = 150°C
R_DS(on)	0.28 Ω @ V_GS = –10 V - Enables <1.5 W conduction loss at –9.8 A continuous drain current
I_D (continuous)	–9.8 A @ T_C = 25°C - Sustains full rated load in heatsinked D-Pak mounting
Q_G	37 nC - Reduces gate drive power and enables 100 kHz+ PWM operation with standard 1-A drivers
E_AS	120 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs
V_GS(th)	–2.0 to –4.0 V - Ensures reliable turn-on with microcontroller GPIO or logic-level gate drivers
t_r/t_f	35/85 ns @ V_DD = –50 V, I_D = –9.8 A - Limits switching losses in 50–200 kHz SMPS stages

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad on bottom side for enhanced thermal conduction to PCB copper; 3-pin surface-mount configuration requiring minimum 200 mm² 2-oz copper pour for T_C ≤ 100°C operation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to system ground or floating rail in high-side topology
Pin 2 (Gate)	Control input	Receives negative-going logic signal; requires 10 kΩ pull-down for default-off safety
Pin 3 (Drain)	Power output	High-current path to load; ties directly to exposed metal pad for thermal and electrical conduction

Key Features

Feature	Design Value
Lead-free (Pb-free) construction	RoHS-compliant D-Pak assembly per JEDEC J-STD-020 moisture sensitivity level 1
100% UIS tested	Each unit validated for unclamped inductive switching robustness at rated E_AS
Fast body diode recovery	t_rr = 120 ns ensures minimal shoot-through risk in synchronous buck or half-bridge converters
Low Q_GD/Q_G ratio	0.42 - Improves Miller immunity and reduces gate oscillation during hard commutation

Applications

Industrial Power Supply

Motor Drive H-Bridge

Use Scenario: Secondary-side synchronous rectification in 48 V telecom PSUs delivering 200 W continuous output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss by 40%.

Use Value: Achieves >94% efficiency at full load due to 0.28 Ω R_DS(on) and 37 nC Q_G enabling fast gate transitions.

Use Scenario: High-side switch in 24 V brushed DC motor driver controlling bidirectional rotation.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated body diode providing freewheeling path during PWM off-time.

Use Value: Eliminates need for external flyback diode; t_rr = 120 ns prevents cross-conduction in 20 kHz PWM.

Reverse Polarity Protection

DC Load Switch

Use Scenario: Input protection circuit for 12 V automotive infotainment modules subjected to battery reversal.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET acting as active crowbar with gate tied to input via resistor divider.

Use Value: Blocks –100 V faults while maintaining <50 mV drop at 8 A, avoiding fuse blow and system reset.

Use Scenario: Hot-swap controller for 48 V server backplane slots requiring inrush current limiting.

IC Role / Device Role / Timing Role: Controlled turn-on switch with gate slew-rate limiting to cap dI/dt during plug-in events.

Use Value: R_DS(on) stability over –55 to +175°C ensures consistent current limiting across environmental extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 0.20 Ω @ –10 V; higher I_D = –19 A but larger TO-220 package	Requires through-hole mounting and heatsink; unsuitable for space-constrained SMT layouts	Choose when higher current headroom and thermal mass outweigh board area constraints
STP9PF10	R_DS(on) = 0.35 Ω @ –10 V; lower Q_G = 25 nC but no UIS rating	Lacks avalanche energy validation; not recommended for inductive loads without snubbers	Prefer only in resistive or lightly inductive DC loads where E_AS is non-critical

Compared with IRFU9120NPBF, IRF9540NPBF trades SMT compatibility for higher current capacity and lower R_DS(on), while STP9PF10 sacrifices ruggedness for faster switching-making IRFU9120NPBF optimal for compact, inductive-load SMT power switches.

Availability

IRFU9120NPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, reverse polarity protection circuits, and DC load switches requiring stable component supply and long-term manufacturability.

Supply support for IRFU9120NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRFU9120NPBF belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, engineered for high-reliability industrial switching where ruggedness, thermal stability, and SMT manufacturability are critical.

FAQ

What is the maximum safe operating junction temperature for IRFU9120NPBF?

The absolute maximum junction temperature is 175°C per datasheet limits. Continuous operation above 150°C requires derating I_D to ≤ –5.2 A at T_C = 100°C, verified by transient thermal impedance Z_thJC curves and single-pulse SOA testing.

Can IRFU9120NPBF be used in parallel with identical units?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases ~0.6%/°C) ensures inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual 10 Ω gate resistors to suppress oscillation.

Does IRFU9120NPBF require a gate driver IC for microcontroller interfacing?

No-its V_GS(th) range (–2.0 to –4.0 V) allows direct drive from 3.3 V or 5 V GPIO if inverted logic is acceptable. For fast switching or high-side bootstrap operation, a dedicated P-channel gate driver like IRS2001PBF improves rise/fall time consistency.

Is the body diode of IRFU9120NPBF suitable for continuous freewheeling conduction?

Yes-the body diode is rated for continuous I_S = –9.8 A at T_C = 25°C with V_SD = –1.7 V, and its 120 ns t_rr is characterized under industrial-grade test conditions (di/dt = 100 A/µs), making it suitable for synchronous rectification and H-bridge freewheeling.

IRFU9120NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 480mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU9120NPBF FAQ

1.How can I place an order for IRFU9120NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9120NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9120NPBF reliable?

The price and inventory of IRFU9120NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9120NPBF is usually 5 days.

3.What payment methods are accepted for IRFU9120NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9120NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9120NPBF?

IRFU9120NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9120NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9120NPBF?

For technical support, including IRFU9120NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9120NPBF requirements.

6.How does Aetrix verify that IRFU9120NPBF is sourced from the original manufacturer or authorized distributors?

All IRFU9120NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9120NPBF meets industry standards.

7.What is the process for return or replacement of IRFU9120NPBF?

All IRFU9120NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9120NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9120NPBF part is unused and in its original packaging.

Return procedure for IRFU9120NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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