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Infineon Technologies IRFZ34E
- Part No.:
- IRFZ34E
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ34E.pdf
- Description:
- MOSFET N-CH 60V 28A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,727
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Product details
Overview
IRFZ34E from International Rectifier is a 60V, 28A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.042Ω RDS(on) at VGS = 10V, 175°C maximum junction temperature, and fast switching with 5.1ns turn-on delay and 30ns rise time - deployed in DC-DC converters, motor drives, and power supply synchronous rectification.
For engineers reviewing the IRFZ34E datasheet, IRFZ34E pinout, IRFZ34E application, or IRFZ34E equivalent, key selection criteria include continuous drain current derating above 25°C, avalanche energy rating (97mJ), gate charge profile (30nC total), and thermal resistance (RθJC = 2.2°C/W) for heatsink-limited designs.
Technical Context
The IRFZ34E employs Fifth Generation HEXFET® process technology to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its body diode exhibits 1.3V forward voltage at 17A and 63–95ns reverse recovery time, enabling moderate-frequency hard-switched topologies.
Designed for gate-driven operation at VGS = 10V, it delivers 7.6S transconductance at 17A/25V and supports ±20V gate voltage tolerance. The device's 80pF Crss and 680pF Ciss enable predictable Miller-effect control with 13Ω gate resistor in standard test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60V - Maximum blocking voltage before avalanche onset; defines usable input range in 48V bus applications. |
| RDS(on) | 0.042Ω @ VGS = 10V, ID = 17A - Directly determines conduction loss (Pcond ≈ I² × 0.042) in high-current paths. |
| ID (TC = 25°C) | 28A - Continuous drain current limit at case temperature 25°C; derates linearly to 20A at 100°C. |
| EAS | 97mJ - Single-pulse avalanche energy rating; enables robustness against inductive turn-off transients without external snubbers. |
| Qg | 30nC - Total gate charge required for full enhancement; sets minimum driver current (e.g., 1.5A peak for 20ns transition). |
| RθJC | 2.2°C/W - Junction-to-case thermal resistance; determines heatsink requirement when mounted with thermal grease (RθCS = 0.5°C/W). |
| tr/tf | 30ns/30ns - Rise/fall times at VDD = 30V, ID = 17A, RG = 13Ω; constrains maximum practical switching frequency. |
Pinout & Package
Package: TO-220AB - Industry-standard through-hole power package with isolated tab (drain-connected), rated for ≤50W dissipation in commercial-industrial environments. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300°C for 10 seconds at 1.6mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Leftmost) | Gate (G) | Control terminal requiring ≥10V for full enhancement; gate leakage ≤±100nA at ±20V ensures low static power draw. |
| 2 (Center) | Drain (D) | Main high-side current path; electrically connected to metal tab - must be insulated from heatsink unless referenced to system ground. |
| 3 (Rightmost) | Source (S) | Power return node; internal source inductance (LS = 7.5nH) impacts high-di/dt switching noise and gate drive loop stability. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.042Ω reduces conduction losses by >30% vs. prior-generation 60V MOSFETs at 15A, improving efficiency in 12–48V SMPS. |
| Dynamic dv/dt rating | 5.0V/ns peak diode recovery dv/dt tolerance prevents false turn-on during fast inductive flyback transitions. |
| 175°C operating temperature | Enables operation in sealed enclosures or high-ambient industrial environments without forced air cooling. |
| Fifth Generation HEXFET® process | Optimizes cell density and channel geometry to achieve best-in-class RDS(on) × Qg figure of merit (1.26 Ω·nC). |
Applications
| DC-DC Buck Converter | Brushed DC Motor Drive |
|---|---|
|
Use Scenario: High-efficiency 48V-to-12V step-down converter delivering up to 20A output. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: Achieves >94% efficiency at full load due to 0.042Ω RDS(on), lowering heat sink size by 40% versus diode-based design. |
Use Scenario: H-bridge driver controlling 24V brushed motors in automated gate actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 17A with body diode freewheeling. Use Value: 97mJ avalanche rating absorbs inductive kickback during PWM commutation without external clamping. |
| AC-DC PFC Front-End | UPS Inverter Stage |
|
Use Scenario: Boost-type active PFC stage operating at 65kHz in 1kW offline power supply. IC Role / Device Role / Timing Role: Fast-switching main switch with low Crss to minimize Miller-induced shoot-through risk. Use Value: 30ns rise/fall times and 80pF Crss support clean zero-voltage switching transitions under light-load conditions. |
Use Scenario: Half-bridge inverter converting 48V battery to 230VAC for backup power systems. IC Role / Device Role / Timing Role: High-current, high-reliability switching device in high-temperature battery cabinet environments. Use Value: 175°C max junction temperature allows sustained 28A operation at ambient up to 85°C with passive heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | RDS(on) = 0.018Ω (lower), but Qg = 85nC (higher); TO-220 package, same pinout. | Better conduction loss at <10A, but higher gate drive power and slower switching at same RG. | Prefer for low-frequency, high-current linear regulation where switching loss is secondary. |
| IRFZ44E | RDS(on) = 0.028Ω (lower), Qg = 35nC (slightly higher); identical TO-220AB footprint and pinout. | Improved efficiency in 12–24V systems with tighter thermal constraints due to lower RDS(on). | Drop-in upgrade where board layout and gate drive capability allow marginal increase in Qg. |
Compared with STP60NF06 and IRFZ44E, the IRFZ34E offers balanced trade-offs: moderate RDS(on) and Qg suited for 50–100kHz switching in cost-sensitive industrial power supplies, whereas alternatives prioritize either conduction loss (IRFZ44E) or ultra-low RDS(on) at expense of drive complexity (STP60NF06).
Availability
IRFZ34E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and UPS inverters requiring stable component supply across extended production lifecycles.
Supply support for IRFZ34E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies since 2015) pioneered high-performance power MOSFETs and IGBTs, focusing on efficiency-critical power conversion systems.
The HEXFET® product line was engineered specifically for high-current, high-reliability switching in industrial motor controls, telecom power supplies, and renewable energy inverters - emphasizing ruggedness, thermal performance, and manufacturability.
FAQ
What is the maximum safe operating frequency for IRFZ34E in hard-switched applications?
The IRFZ34E supports reliable operation up to 100kHz in hard-switched topologies when gate drive strength (≥1.5A peak), PCB layout (low-inductance loops), and heatsinking (RθJA ≤ 62°C/W) are optimized. Above this, switching losses dominate due to 30ns tr/tf and 30nC Qgd, requiring careful thermal validation.
Can IRFZ34E be used without a heatsink in low-duty-cycle pulsed applications?
Yes - at 28A pulsed (≤100µs, ≤2% duty cycle), junction temperature rise remains within limits even with no heatsink, provided case temperature stays below 100°C. However, RθJA = 62°C/W means >5W average dissipation requires thermal management to avoid exceeding 175°C TJ.
Does IRFZ34E have built-in ESD protection?
No - the IRFZ34E lacks integrated ESD protection circuitry. Gate oxide is susceptible to damage from static discharge; handling requires grounded wrist straps, anti-static mats, and current-limiting gate resistors (≥10Ω) during prototyping and assembly.
How does the body diode performance affect its use in synchronous rectification?
The body diode has VSD = 1.3V at 17A and trr = 63–95ns, making it suitable for medium-frequency (<100kHz) synchronous rectification where reverse recovery loss is manageable. For higher frequencies, external Schottky diodes may be preferred to eliminate recovery tail current.
IRFZ34E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ34E FAQ
1.How can I place an order for IRFZ34E through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ34E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ34E reliable?
The price and inventory of IRFZ34E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34E is usually 5 days.
3.What payment methods are accepted for IRFZ34E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ34E?
IRFZ34E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ34E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ34E?
For technical support, including IRFZ34E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34E requirements.
6.How does Aetrix verify that IRFZ34E is sourced from the original manufacturer or authorized distributors?
All IRFZ34E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34E meets industry standards.
7.What is the process for return or replacement of IRFZ34E?
All IRFZ34E units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ34E part is unused and in its original packaging.
Return procedure for IRFZ34E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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