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Infineon Technologies IRFZ34EPBF
- Part No.:
- IRFZ34EPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ34EPBF.pdf
- Description:
- MOSFET N-CH 60V 28A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,649
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Product details
Overview
IRFZ34EPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 28A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.042Ω RDS(on) at VGS = 10V, 175°C max junction temperature, and fast switching with 30ns rise time. It serves as a main power switch in DC-DC converters, motor drives, and power supplies.
For engineers reviewing the IRFZ34EPBF datasheet, IRFZ34EPBF pinout, IRFZ34EPBF application, or IRFZ34EPBF equivalent, key selection criteria include its low on-resistance for conduction loss minimization, avalanche-rated ruggedness for inductive load handling, and TO-220 thermal performance up to 50W dissipation.
Technical Context
This MOSFET uses fifth-generation HEXFET process technology to achieve ultra-low RDS(on) per die area while maintaining high dv/dt immunity (175 V/ns) and robust unclamped inductive switching capability (97 mJ EAS). Its body diode has 63–95 ns reverse recovery time and 130–200 nC Qrr, enabling moderate-frequency hard-switched operation.
The device operates with gate threshold voltage of 2.0–4.0 V and total gate charge of 30 nC, supporting standard 10 V logic-level drive. Its internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) influence high-speed switching behavior and layout-sensitive ringing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche; defines safe operating range in 48 V bus systems |
| RDS(on) | 0.042 Ω - Conduction loss of 33 W at 28 A; enables high-efficiency 20–50 W power stages |
| ID (TC = 25°C) | 28 A - Continuous current rating with heatsink; derates to 20 A at 100°C case temperature |
| EAS | 97 mJ - Single-pulse avalanche energy; supports reliable operation under inductive turn-off stress |
| Qg | 30 nC - Total gate charge; determines driver strength requirement for 100 kHz+ switching |
| tr/tf | 30/30 ns - Rise/fall times at VDD = 30 V, ID = 17 A; sets practical hard-switching frequency limit |
| RθJC | 2.2 °C/W - Junction-to-case thermal resistance; enables ~45 W continuous dissipation with 25°C heatsink |
Pinout & Package
IRFZ34EPBF is housed in a lead-free TO-220AB package with isolated tab (drain-connected), standardized for industrial mounting and heatsinking. The package features low thermal resistance and mechanical robustness for high-reliability power applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level signal; requires ≤30 nC charge for full enhancement |
| 2 (Drain) | High-side power output | Connected to drain metallization and heatsink tab; carries switched load current |
| 3 (Source) | Power return reference | Common node for load return and gate drive reference; internal source inductance affects switching |
| 4 (Drain) | Secondary drain connection | Parallel drain path to reduce package inductance; improves current sharing in paralleled configurations |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.042 Ω reduces I²R conduction losses by >30% vs. legacy 60 V MOSFETs at same current |
| 175°C rated junction | Enables operation in sealed enclosures or high ambient environments without derating |
| Dynamic dv/dt rating | 175 V/ns immunity prevents false turn-on during high-slew-rate transients |
| Lead-free TO-220AB | RoHS-compliant construction with industry-standard footprint and thermal interface |
| Fast body diode | 63–95 ns trr and low Qrr support synchronous rectification and freewheeling in buck topologies |
Applications
| DC-DC Converters | Brushed DC Motor Drives |
|---|---|
Use Scenario: Step-down (buck) converter in industrial PLC power modules delivering 12 V/5 A from 48 V input. IC Role / Device Role: Primary high-side switching element controlling energy transfer to output inductor. Use Value: 0.042 Ω RDS(on) limits conduction loss to <1.2 W at full load, improving efficiency to >92%. | Use Scenario: H-bridge driver for 24 V, 15 A brushed motors in automated gate actuators. IC Role / Device Role: Low-side switch in half-bridge configuration, commutating motor current through body diode. Use Value: 97 mJ EAS withstands inductive kickback during PWM dead-time, eliminating external snubbers. |
| AC-DC Power Supplies | LED Constant-Current Drivers |
Use Scenario: Primary-side switch in 65 W offline flyback adapter with universal AC input. IC Role / Device Role: Main switching transistor in self-oscillating or PWM-controlled flyback topology. Use Value: 60 V VDSS accommodates reflected output voltage plus leakage spike margin at 265 V AC input. | Use Scenario: High-side switch regulating constant current to 12 V, 2 A LED strings in streetlight drivers. IC Role / Device Role: Series pass element controlled by analog dimming or PWM signal. Use Value: TO-220 thermal performance sustains 15 W dissipation at 70°C ambient, enabling compact heatsink design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | RDS(on) = 0.018 Ω (lower), ID = 60 A, VDSS = 60 V, TO-220 package | Higher current rating suits higher-power motor drives but requires larger gate drive | Select when lower conduction loss is critical and gate drive can supply 50 nC |
| IRFZ44NPBF | RDS(on) = 0.028 Ω (lower), ID = 49 A, VDSS = 55 V, TO-220 package | 55 V rating limits use in 48 V systems with transient margin; faster switching (tr = 22 ns) | Select for cost-sensitive 24–36 V applications where 55 V margin is acceptable |
Compared with STP60NF06 and IRFZ44NPBF, IRFZ34EPBF offers balanced trade-offs: sufficient 60 V rating for 48 V systems, proven ruggedness in industrial motor control, and moderate gate charge for compatibility with common microcontroller GPIO drivers.
Availability
IRFZ34EPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drives, and AC-DC power supplies requiring stable component supply and long-term industrial availability.
Supply support for IRFZ34EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET innovation.
The IRFZ34EPBF belongs to the fifth-generation HEXFET Power MOSFET product line, engineered for high-efficiency, rugged switching in industrial power conversion and motor control applications.
FAQ
Is IRFZ34EPBF logic-level compatible?
No, IRFZ34EPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires 10 V gate drive to achieve specified RDS(on) of 0.042 Ω. Driving with 5 V results in significantly higher on-resistance and conduction loss.
What is the maximum continuous power dissipation for IRFZ34EPBF?
At TC = 25°C, maximum power dissipation is 112 W. With a typical heatsink achieving 2.5°C/W case-to-ambient, practical continuous dissipation is ~45 W at 70°C ambient, limited by RθJA = 62°C/W and 175°C max junction temperature.
Does IRFZ34EPBF have avalanche capability?
Yes, IRFZ34EPBF is fully rated for unclamped inductive switching with single-pulse avalanche energy EAS = 97 mJ at TJ = 25°C. This enables reliable operation in relay drivers, solenoid controls, and motor H-bridges without external clamping diodes.
Can IRFZ34EPBF be paralleled for higher current?
Yes, IRFZ34EPBF supports paralleling due to positive temperature coefficient of RDS(on), which promotes current sharing. Use matched gate resistors (≤10 Ω) and symmetrical PCB layout to minimize loop inductance and ensure balanced dynamic current distribution.
IRFZ34EPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ34EPBF FAQ
1.How can I place an order for IRFZ34EPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ34EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ34EPBF reliable?
The price and inventory of IRFZ34EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34EPBF is usually 5 days.
3.What payment methods are accepted for IRFZ34EPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34EPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ34EPBF?
IRFZ34EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ34EPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ34EPBF?
For technical support, including IRFZ34EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34EPBF requirements.
6.How does Aetrix verify that IRFZ34EPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ34EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34EPBF meets industry standards.
7.What is the process for return or replacement of IRFZ34EPBF?
All IRFZ34EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34EPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ34EPBF part is unused and in its original packaging.
Return procedure for IRFZ34EPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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