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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ34NSPBF

Name: IRFZ34NSPBF
Brand: Infineon Technologies
SKU: IRFZ34NSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ34NSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ34NSPBF.pdf

Description:: MOSFET N-CH 55V 29A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ34NSPBF from Infineon Technologies is a 55 V, 28 A, N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package with 0.04 Ω R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC conversion and motor drive switching in industrial power supplies and UPS systems.

For engineers reviewing the IRFZ34NSPBF datasheet, IRFZ34NSPBF pinout, IRFZ34NSPBF application, or IRFZ34NSPBF equivalent, key selection criteria include its 55 V V_DSS, 28 A I_D continuous rating, 0.04 Ω on-resistance, 175 °C T_J max, and D-Pak thermal performance under pulsed load conditions.

Technical Context

This MOSFET uses planar silicon process technology with optimized gate oxide and channel doping to achieve low R_DS(on) while maintaining robust avalanche energy rating (E_AS = 120 mJ at T_J = 25 °C). It features fast switching characteristics: t_d(on) = 12 ns, t_r = 35 ns, t_d(off) = 45 ns, t_f = 25 ns at V_DD = 28 V, I_D = 16 A.

The device integrates an intrinsic body diode with reverse recovery time t_rr = 120 ns and Q_rr = 29 nC at I_F = 28 A, V_DD = 25 V, di/dt = 100 A/µs - enabling reliable operation in synchronous rectification and freewheeling applications without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage before avalanche breakdown; defines safe operating range in 48 V bus and 36 V motor drive topologies.
R_DS(on) @ V_GS=10 V	0.04 Ω - Low conduction loss enabling ≤1.6 W I²R dissipation at 20 A, critical for thermally constrained D-Pak PCB layouts.
I_D (continuous)	28 A @ T_C = 25 °C - Sustained current capability with case-mounted heatsinking; derates to ~12 A at T_C = 100 °C.
Q_G	35 nC - Total gate charge determining driver strength requirement; enables <1 µs turn-on with 35 mA average gate current.
E_AS	120 mJ - Single-pulse avalanche energy rating confirming ruggedness against inductive switching transients in relay/snubberless designs.
T_J max	175 °C - Maximum junction temperature allowing operation in sealed enclosures or high ambient industrial environments.
C_iss	1200 pF - Input capacitance defining Miller effect and gate drive loop stability; requires careful layout to avoid oscillation at >100 kHz switching.

Pinout & Package

IRFZ34NSPBF is housed in a surface-mount TO-262 (D-Pak) package with exposed drain pad for enhanced thermal conduction to PCB copper. The package measures 10.16 × 4.83 × 2.39 mm (0.400 × 0.190 × 0.094 in) and supports lead-free reflow soldering (RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to internal die substrate	Exposed metal tab on bottom of package - must be soldered to large copper pour for thermal management and electrical connection.
Gate (G)	Control electrode modulating channel conductivity	High-impedance input requiring low-inductance gate resistor (typically 10–47 Ω) to damp ringing and control dV/dt.
Source (S)	Reference node for gate drive and current return path	Connected to PCB ground plane; forms common reference for gate driver IC output and current-sense shunt placement.

Key Features

Feature	Design Value
Low R_DS(on) with 10 V gate drive	0.04 Ω enables <1.2 W conduction loss at 17.5 A, reducing heatsink size in 100–200 W SMPS designs.
Fast switching with low Q_G	35 nC total gate charge allows clean 100 ns–1 µs transitions at 50–500 kHz, minimizing switching loss in hard-switched converters.
Rugged avalanche-rated structure	120 mJ E_AS permits reliable operation without snubbers in inductive load switching (e.g., solenoid drivers, BLDC phase legs).
Optimized body diode recovery	120 ns t_rr and 29 nC Q_rr reduce cross-conduction losses and EMI in synchronous buck and half-bridge topologies.
TO-262 thermal performance	θ_JC = 1.2 °C/W enables 28 A continuous operation with 2 oz copper + 20 cm² heatsink area at 25 °C ambient.

Applications

Industrial DC-DC Converters

Uninterruptible Power Supplies (UPS)

Use Scenario: Step-down regulation from 48 V battery bank to 12 V control rail in telecom rectifier modules.

IC Role / Device Role: Primary synchronous rectifier switch in 200 kHz buck converter stage.

Use Value: 0.04 Ω R_DS(on) reduces conduction loss by 40% vs. legacy 0.07 Ω MOSFETs, improving full-load efficiency from 92% to 94.5%.

Use Scenario: Inverter H-bridge output stage delivering 1 kVA AC output from 36 V DC bus.

IC Role / Device Role: High-side and low-side switching element in 10 kHz PWM-driven bridge leg.

Use Value: 175 °C T_J max and 120 mJ E_AS ensure survival during grid-fault short-circuits and battery overvoltage events.

Brushless DC Motor Drives

Industrial Solenoid & Relay Drivers

Use Scenario: 3-phase inverter powering 750 W fan motor in HVAC blower system.

IC Role / Device Role: Low-side switch in 6-step commutation with 15 kHz PWM modulation.

Use Value: Fast 35 ns rise time and 25 ns fall time minimize dead-time losses and torque ripple at rated speed.

Use Scenario: High-current latching solenoid actuator in automated valve control cabinet.

IC Role / Device Role: Single-ended switch controlling 24 V, 15 A inductive load with flyback suppression.

Use Value: Integrated body diode with 120 ns t_rr eliminates need for external fast-recovery diode, saving board space and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	60 V V_DSS, 30 A I_D, 0.036 Ω R_DS(on), TO-220 package	Higher voltage margin but through-hole mounting; lacks D-Pak thermal interface for compact PCBs.	Prefer when higher V_DSS headroom is needed and board space allows through-hole assembly.
IRFZ44NPBF	55 V V_DSS, 49 A I_D, 0.028 Ω R_DS(on), same TO-262 package	Lower R_DS(on) and higher current rating, but larger Q_G (61 nC) increases gate drive demand.	Choose when lower conduction loss justifies higher gate drive power and slower switching in <100 kHz applications.

Compared with STP30NF20 and IRFZ44NPBF, IRFZ34NSPBF offers optimal balance of D-Pak thermal performance, 55 V rating, and moderate gate charge - making it preferred for space-constrained 48 V industrial converters where 28 A peak current suffices.

Availability

IRFZ34NSPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, uninterruptible power supplies (UPS), and brushless DC motor drives requiring stable component supply, RoHS compliance, and long-term lifecycle support.

Supply support for IRFZ34NSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The StrongIRFET™ product line delivers high-current, low-R_DS(on) MOSFETs for industrial power conversion, motor control, and renewable energy systems - designed for reliability under sustained thermal stress and repetitive avalanche conditions.

FAQ

What is the maximum continuous drain current for IRFZ34NSPBF at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 12 A. This derating reflects thermal resistance limits of the TO-262 package: with θ_JC = 1.2 °C/W and 175 °C T_J(max), 75 °C allowable rise permits 12 A (P_D = I²R = 12² × 0.04 = 5.76 W → ΔT = 5.76 × 1.2 ≈ 69 °C).

Does IRFZ34NSPBF require a gate driver IC for 100 kHz switching?

Yes - due to its 35 nC total gate charge, driving IRFZ34NSPBF directly from a microcontroller GPIO is insufficient. A dedicated gate driver (e.g., TC4427 or IRS2004) capable of ≥100 mA peak sink/source current is required to achieve clean 100 ns–500 ns transitions and prevent shoot-through in bridge configurations.

Can IRFZ34NSPBF replace IRFZ34N in existing designs?

Yes - IRFZ34NSPBF is the lead-free, RoHS-compliant version of IRFZ34N with identical electrical specifications, pinout, and thermal profile. No layout or firmware changes are needed; only reflow profile adjustments for Pb-free soldering (peak 260 °C) are required.

What is the typical body diode forward voltage at 28 A?

The typical body diode forward voltage is 1.3 V at I_F = 28 A and T_J = 25 °C. This value increases to ~1.55 V at T_J = 175 °C, impacting conduction loss during freewheeling intervals in synchronous rectifiers and half-bridge topologies.

IRFZ34NSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFZ34NSPBF FAQ

1.How can I place an order for IRFZ34NSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ34NSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ34NSPBF reliable?

The price and inventory of IRFZ34NSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34NSPBF is usually 5 days.

3.What payment methods are accepted for IRFZ34NSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34NSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ34NSPBF?

IRFZ34NSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ34NSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ34NSPBF?

For technical support, including IRFZ34NSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34NSPBF requirements.

6.How does Aetrix verify that IRFZ34NSPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ34NSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34NSPBF meets industry standards.

7.What is the process for return or replacement of IRFZ34NSPBF?

All IRFZ34NSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34NSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ34NSPBF part is unused and in its original packaging.

Return procedure for IRFZ34NSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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